概述
数据手册SD203N/R08S10 概述
Fast Recovery Diodes (Stud Version), 200 A 快恢复二极管（梭哈版） ， 200 A
SD203N/R08S10 数据手册
通过下载SD203N/R08S10数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SD203N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 200 A
FEATURES
• High power fast recovery diode series
• 1.0 to 2.0 µs recovery time
RoHS
• High voltage ratings up to 2500 V
• High current capability
COMPLIANT
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version JEDEC DO-205AB (DO-9)
• Maximum junction temperature 125 °C
• RoHS compliant
DO-205AB (DO-9)
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV)
200 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
200
UNITS
A
IF(AV)
IF(RMS)
IFSM
TC
85
°C
314
50 Hz
60 Hz
50 Hz
60 Hz
Range
Range
TJ
4990
A
5230
125
I2t
kA2s
114
VRRM
trr
400 to 2500
1.0 to 2.0
25
V
µs
°C
TJ
- 40 to 125
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
04
08
10
12
14
16
20
25
400
800
500
900
SD203N/R..S10
1000
1200
1400
1600
2000
2500
1100
1300
1500
1700
2100
2600
35
SD203N/R..S15
SD203N/R..S20
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
UNITS
A
200
85
Maximum average forward current
at case temperature
180° conduction, half sine wave
°C
Maximum RMS current
IF(RMS)
DC at 76 °C case temperature
314
4990
5230
4200
4400
125
114
88
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
81
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
1250
kA2√s
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
1.00
1.47
1.10
V
High level value of threshold voltage
(I > π x IF(AV)), TJ = TJ maximum
Low level value of forward
slope resistance
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
mΩ
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.46
1.65
Maximum forward voltage drop
VFM
Ipk = 628 A, TJ = 25 °C, tp = 400 µs square pulse
V
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
Revision: 08-Apr-08
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
CODE
IFM
t
rr AT 25 % IRRM
(µs)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
Qrr
(µC)
Irr
(A)
trr
(µs)
t
dir
dt
S10
S15
S20
1.0
1.5
2.0
2.4
2.9
3.2
52
90
33
44
46
Qrr
IRM(REC)
750
25
- 30
107
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating
temperature range
TJ
- 40 to 125
- 40 to 150
0.115
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Not-lubricated threads
Lubricated threads
31
Mounting torque 10 %
Nm
g
24.5
250
Approximate weight
Case style
See dimensions (link at the end of datasheet)
DO-205AB (DO-9)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
120°
90°
0.010
0.013
0.017
0.025
0.044
0.008
0.014
0.019
0.027
0.044
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
550
130
SD203N/ RSeries
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
R
(DC) = 0.115 K/ W
Conduction Angle
thJC
120
110
100
90
RM S Lim it
30°
Conduction Period
SD 203 N/ R Se rie s
60°
90°
120°
180°
80
T = 125°C
J
0
70
0
50 100 150 200 250 300 350
Average Forward Current (A)
0
0
0
40
80
120 160 200 240
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
130
120
110
100
90
5000
4500
4000
3500
3000
2500
2000
1500
1000
At Any Rated Load Condition And With
SD 203N/ R Se rie s
Rated V Applied Following Surge.
RRM
R
(DC) = 0.115 K/ W
thJC
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Period
30°
60°
90°
80
SD 203N / R Se r ie s
120°
180°
DC
70
50 100 150 200 250 300 350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
350
300
250
200
150
100
50
5500
Maximum Non Repetitive Surge Current
180°
120°
90°
60°
30°
VersusPulse Train Duration.
5000
4500
4000
3500
3000
2500
2000
1500
1000
Initial T = 125 °C
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
RM S Lim it
Conduction Angle
SD203N/ RSeries
T = 125°C
J
SD203N/ RSeries
0
50
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100
150
200
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
Revision: 08-Apr-08
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
1
0.1
10000
1000
100
Steady State Value:
T = 25 ° C
J
R
= 0.115 K/W
thJC
(DC Operation)
T = 125 ° C
J
0.01
SD 203N / R Se rie s
SD203N/ RSeries
4.5
0.001
0.001
.5
2.5
6.5
0.01
0.1
1
10
InstantaneousForward Voltage (V)
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
120
V
FP
T = 125° C
J
I
100
80
60
40
20
0
T = 25° C
J
SD 203N/ R. . S20 Se r ie s
0
200
400
600
800
1000 1200
1400
1600
1800
2000
Rate Off Fall Of Forward Current di/dt (A/usec)
Fig. 9 - Typical Forward Recovery Characteristics
2.8
2.6
2.4
2.2
2
140
130
120
110
I
= 750 A
FM
SD 203N/ R. . S10 Se r ie s
T = 125 °C, V = 30V
Sq u a r e Pu lse
J
r
100
90
80
70
60
50
40
30
20
10
I
= 750 A
FM
400 A
200 A
Sq u a r e Pu lse
400 A
200 A
SD 203N / R. . S10 Se r ie s
T = 125 °C , V = 30V
1.8
J
r
1.6
10
100
0
20
40
60
80 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Ra t e O f Fa ll O f Fo rw a rd C urre nt - d i/ d t (A / µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
100
130
120
110
100
90
I
= 750 A
I
= 750 A
FM
FM
Sq u a r e Pu lse
Sq u a re Pu l se
90
80
70
60
50
40
30
20
400 A
400 A
200 A
200 A
80
70
60
50
40
SD 203N/ R. . S15 Series
T = 125 °C, V = 30V
30
SD203N/ R.. S10 Se rie s
T = 125 °C, V = 30V
J
r
20
J
r
10
10 20 30 40 50 60 70 80 90 100
20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 15 - Recovery Current Characteristics
3.6
3.6
SD 203N/ R. . S15 Se rie s
T = 125 °C, V = 30V
SD 203N/ R. . S20 Se r ie s
T = 125 °C, V = 30V
J
r
J
r
3.4
3.2
3
3.2
2.8
2.4
2
I
= 750 A
FM
Sq u a re Pu lse
I
= 750 A
FM
Sq u a re Pu lse
400 A
200 A
2.8
2.6
2.4
400 A
200 A
1.6
10
100
10
100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 13 - Recovery Time Characteristics
Fig. 16 - Recovery Time Characteristics
170
300
I
= 750 A
FM
160
150
140
130
120
110
100
90
I
= 750 A
FM
Sq u a re Pu lse
Sq u a r e Pu lse
250
200
150
100
50
400 A
200 A
400 A
200 A
80
SD203N/ R..S20 Series
70
SD 203N / R. . S15 Se r ie s
T = 125 °C, V = 30V
T = 125 °C, V = 30V
J
r
60
J
r
50
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 14 - Recovery Charge Characteristics
Fig. 17 - Recovery Charge Characteristics
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
Revision: 08-Apr-08
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
130
I
= 750 A
FM
Sq u a re Pu lse
120
110
100
90
400 A
80
200 A
70
60
50
SD 203N / R. . S20 Se r ie s
40
T = 125 °C, V = 30V
J
r
30
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Current Characteristics
1E4
1E3
1E2
1E1
20 joulesper pulse
20 joulesperpulse
10
4
10
4
2
1
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0.4
0.2
0.1
0.06
SD203N/ R..S10 Series
Tra p e zo i d a l Pu lse
SD203N/R..S10 Series
Sinusoidal Pulse
T = 125°C, VRRM = 1120V
J
tp
T = 125°C, VRRM = 1120V
J
dv/ dt=1000V/ µs, di/ dt=50A/ µs
dv/ dt = 1000V/ µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 joules per pulse
20 joules per pulse
10
10
4
2
4
2
1
1
0.4
0.4
0.2
0.1
0.04
0.02
0.01
0.2
0.1
SD 2 0 3 N / R. . S1 5 Se rie s
Trapezoidal Pulse
SD 2 0 3 N / R. . S1 5 Se rie s
Sin u so id a l Pu l se
T = 125°C, VRRM = 1120V
J
tp
T = 125°C, VRRM = 1120V
J
dv/dt=1000V/µs, di/dt=50A/µs
tp
dv/dt = 1000V/µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h (µs)
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
Vishay High Power Products
1E4
20 joulesper pulse
10
20 joulesper p ulse
10
4
4
2
1
2
1E3
1E2
1E1
1
0.4
0.2
0.1
0.4
0.2
SD 2 0 3 N/ R. . S20 Series
0.04
SD 2 0 3 N / R. . S2 0 Se r ie s
Sin u so id a l Pu lse
0.02
0.01
Trapezoidal Pulse
T = 125°C, VRRM = 1760V
J
T = 12 5° C , VRRM = 1 76 0V
J
tp
d v/ dt=1000V/ µs, di/ dt=50A/ µs
tp
dv/dt = 1000V/ µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Basew id t h (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
20
2
3
R
25 S20
P
B
C
1
3
4
5
6
7
8
9
1
-
-
-
-
Diode
2
3
4
Essential part number
3 = Fast recovery
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
6
7
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 x 1.5
8
-7 B = Flag top terminals (for cathode/ anode leads)
S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
-
C = Ceramic housing (over 1600 V)
9
V = Glass-metal seal (only up to 1600 V)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95301
www.vishay.com
8
For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
Revision: 08-Apr-08
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
*For metric device: M16 x 1.5
contact factory
Document Number: 95301
Revision: 09-Apr-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
SD203N/R08S10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SD203N/R10S10 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N/R12S15 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N/R14S15 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N/R16S15 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N/R20S20 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N/R25S20 | VISHAY | Fast Recovery Diodes (Stud Version), 200 A | 获取价格 |
|
| SD203N02S15FVPBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 200A, 200V V(RRM), Silicon, | 获取价格 |
|
| SD203N02S15MVPBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 200A, 200V V(RRM), Silicon, | 获取价格 |
|
| SD203N02S15PVPBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 200A, 200V V(RRM), Silicon, | 获取价格 |
|
| SD203N02S20FVPBF | INFINEON | Rectifier Diode, 1 Phase, 1 Element, 200A, 200V V(RRM), Silicon, | 获取价格 |
|
SD203N/R08S10 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
