SD303C12S20C [VISHAY]
Fast Recovery Diodes (Hockey PUK Version), 350 A; 快恢复二极管(曲棍球PUK版) , 350一型号: | SD303C12S20C |
厂家: | VISHAY |
描述: | Fast Recovery Diodes (Hockey PUK Version), 350 A |
文件: | 总10页 (文件大小:263K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 2.0 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
DO-200AA
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AA
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
IF(AV)
350 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
350
UNITS
A
°C
A
IF(AV)
Ths
55
550
IF(RMS)
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
5770
IFSM
A
6040
166
I2t
kA2s
152
VRRM
trr
400 to 2500
1.0 to 2.0
25
V
µs
TJ
°C
TJ
- 40 to 125
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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1
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
04
08
10
12
14
16
20
25
400
800
500
900
SD303C..S10C
1000
1200
1400
1600
2000
2500
1100
1300
1500
1700
2100
2600
35
SD303C..S15C
SD303C..S20C
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
UNITS
A
350 (175)
55 (75)
550
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5770
6040
4850
5080
166
No voltage
reapplied
A
Maximum peak, one-cycle ,
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
152
Maximum I2t for fusing
I2t
kA2s
117
100 % VRRM
reapplied
107
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
1660
1.14
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
1.63
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
1.14
mΩ
rf2
0.77
VFM
Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.26
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
CODE
IFM
t
rr AT 25 % IRRM
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
Qrr
(µC)
Irr
(A)
trr
(µs)
(µs)
t
dir
dt
Qrr
S10
S15
S20
1.0
1.5
2.0
2.4
2.9
3.2
52
90
33
44
46
IRM(REC)
750
25
- 30
107
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Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.16
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.08
Mounting force, 10 %
Approximate weight
Case style
4900 (500)
70
N (kg)
g
See dimensions - link at the end of datasheet
DO-200AA
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.010
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
0.012
0.016
TJ = TJ maximum
K/W
60°
0.024
30°
0.042
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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3
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
130
130
120
SD303C..C Series
SD303C..C Series
(Single Side Cooled)
(D ouble Side Cooled)
120
R
(DC) = 0.16 K/W
R
(DC) = 0.08 K/W
th J-hs
th J- hs
110
100
90
110
100
90
C onduction Angle
C ondu ction Period
80
70
180°
80
30°
30°
60
60°
60°
90°
90°
120°
70
120°
50
180°
400
DC
60
40
0
20 40 60 80 100 120 140 160 180
Average Forw ard Current (A)
0
100
200
300
500
600
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
8 00
7 00
6 00
5 00
4 00
3 00
2 00
1 00
0
1 30
1 20
1 10
1 00
9 0
S D 303C ..C S eries
1 80°
1 20°
90°
(S in g le Sid e C oo le d )
R
(D C ) = 0.16 K /W
thJ-hs
60°
R M S Lim it
30°
C ondu ction P eriod
30°
8 0
60°
C onduction An gle
90°
7 0
120°
180°
D C
SD 3 03C ..C Se rie s
125°C
6 0
T
=
J
5 0
0
5 0
1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00
0
5 0
10 0
1 5 0
2 00
2 5 0
3 00
A ve ra g e F or w a rd C u rre n t (A)
A vera g e F o rw a rd C u rre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
1 00 0
130
120
110
100
90
SD303C..C Series
D C
1 80°
1 20°
90°
9 00
8 00
7 00
6 00
(D ouble Side Cooled)
R
(DC) = 0.08 K/W
thJ-h s
60°
30°
C onduction Angle
5 00 R M S Lim it
80
C ondu ction Period
SD 303 C ..C Se rie s
4 00
3 00
2 00
1 00
0
70
60
T
= 125°C
J
90°
60°
120°
50
30°
180°
40
0
1 0 0
2 00
3 00
4 0 0
5 00
6 00
0
50 100 150 200 250 300 350 400
Average Forward Current (A)
A ve ra g e Fo rw a rd C u r ren t (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics
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Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
10000
55 0 0
50 0 0
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
A t A n y Ra te d Lo a d C o n d itio n An d W ith
R a ted A p p lie d F ollo w in g Su rg e .
SD 303C ..C Ser ies
V
RRM
In itia l T
= 12 5°C
J
@
60 H z 0.0 083
s
s
@
50 H z 0.0 100
1 000
100
1 0
T
=
=
25 ° C
J
T
125 ° C
J
SD 30 3C ..C Ser ies
0
1
2
3
4
5
6
7
8
1
1 0
1 00
Number Of Equa l Amp litude Ha lf C ycle C urrent Pulses (N)
In sta n ta n e o us Fo rw a rd V olta g e (V )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
6000
1
M a x im u m N on R e p etitive S u rg e C u rren t
Stea d y S ta te V a lu e
V er su s P u lse T ra in D u ra tio n .
5500
5000
4500
4000
3500
3000
2500
2000
1500
R
=
0.1 6 K /W
(Sin g le Sid e C oole d)
0.0 8 K /W
thJ-hs
In itia l T
=
125 ° C
N o V olta g e R e a p p lied
R a te d R ea p p lie d
J
R
=
thJ-h s
V
RR M
0 .1
0.0 1
(D ou b le S id e C ooled )
(D C O p e ra tion )
SD 303 C ..C Se rie s
S D 303 C ..C Se ries
0 .00 1
0 .00 01 0 .0 0 1 0.0 1
0.1
1
1 0
10 0
0.01
0.1
1
Sq u a re W a ve Pu lse D ur atio n (s)
P u lse T ra in D u ra tio n (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
1 20
V
F P
1 00
8 0
I
T
= 125°C
J
6 0
4 0
2 0
T
=
25°C
J
S D 303C ..S20C Se ries
0
0
20 0
40 0
6 0 0
8 00
10 0 0
12 00
1 40 0
1 60 0
18 0 0
200 0
R ate O f f F a ll O f F orw a rd C u rren t d i/d t (A/u se c)
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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5
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
2.8
3.6
3.2
2.8
2.4
2
SD 3 03C ..S 15C S eries
SD 303C ..S1 0C Se rie s
T
=
1 25 °C , V
= 30V
r
J
T
=
1 25 °C , V
=
3 0V
2.6
2.4
2.2
J
r
I
=
750 A
FM
I
=
75 0 A
FM
Squ are Pu lse
Sq ua re Pulse
400 A
200 A
2
1.8
1.6
400 A
200 A
1.6
10
100
1 0
100
R ate Of Fall Of Forwa rd C urrent - di/dt (A/µs)
R ate Of Fa ll Of Forw ard C urrent - di/dt (A/µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
14 0
170
I
=
750 A
I
= 750 A
FM
FM
13 0
12 0
11 0
10 0
9 0
160
150
140
130
120
110
Squ are Pulse
Squa re Pulse
400 A
200 A
400 A
200 A
8 0
7 0
100
90
80
70
60
50
6 0
5 0
4 0
S D 303C ..S 10C Se rie s
3 0
SD 30 3C ..S 15C S eries
T
=
125 °C , V
= 3 0V
r
J
T
=
125 ° C ,
V
= 30V
r
2 0
J
1 0
0
20
40
60
80
100
10 20 30 4 0 50 60 70 80 9 0 100
Ra te O f Fall Of Forw ard Cu rrent - d i/dt (A/µs)
Rate Of Fa ll Of Forw ard Current - di/dt (A/µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Recovery Charge Characteristics
1 00
1 30
I
= 7 50 A
I
= 750 A
FM
FM
Square Pulse
1 20
1 10
Sq uare Pu lse
90
400 A
200 A
80
70
60
1 00
90
400 A
200 A
80
70
60
50
40
30
20
10
50
40
SD 3 03C ..S15 C Se rie s
SD 303C ..S10C Se rie s
1 25 °C , V 30V
T
=
12 5 ° C ,
V
= 30V
30
20
J
r
T
=
=
r
J
20 30 40 5 0 60 70 80 90 10 0
1 0 20 30 40 50 60 70 80 90 1 00
Rate Of Fall Of Forwa rd Curren t - di/d t (A/µs)
R ate Of Fall Of Forw ard Cu rrent - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Recovery Current Characteristics
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Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
3.6
3 00
SD303C..S20C Series
= 125 °C, V = 30V
I
= 750 A
FM
T
r
J
Sq ua re Pulse
3.4
3.2
2 50
2 00
1 50
1 00
50
I
=
750 A
FM
Sq uare Pulse
400 A
200 A
3
2.8
2.6
2.4
400 A
200 A
SD 3 03C ..S2 0C Se rie s
T
=
1 25 ° C , V
= 30 V
J
r
10 20 30 4 0 50 60 70 80 90 100
10
100
Rate Of Fall Of Forw ard Current - di/dt (A/µs)
Rate Of Fall Of Forwa rd Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
130
120
110
100
90
I
= 750 A
FM
Sq uare Pu lse
400 A
80
200 A
70
60
50
40
30
SD 303C ..S 20C S erie s
J
T
=
125 °C , V
= 30V
r
20
10 20 3 0 40 50 60 70 80 90 10 0
Rate Of Fall Of Forw ard Current - di/d t (A/µs)
Fig. 20 - Recovery Current Characteristics
1 E4
1 E3
1 E2
1 E1
20 joules per pulse
20 jou les p er pulse
10
10
4
4
2
2
1
1
0.4
0.4
0.2
0.2
0.1
0.1
0.04
0.02
0.01
SD303C ..S10C Series
Trapezoid al Pulse
SD303C ..S10C S eries
Sin usoida l Pulse
TJ = 125°C , VRRM= 1120V
TJ
= 125°C , V RRM= 1120V
tp
d v/dt = 1000V/µs ; di/dt=50A/µ s
tp
d v/d t = 1000V /µs
1 E 1
1 E2
1E3
1E4
1 E1
1E 2
1 E3
1 E4
P ulse Ba se w id th (µ s)
P u lse B a sew id th (µ s)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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Document Number: 93174
Revision: 04-Aug-08
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SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
1E4
20 joules per p ulse
20 jo ules per p ulse
10
10
4
2
4
2
1
1
0.4
0.2
0.1
1E3
0.4
0.2
0.04
0.02
1E2
SD303C..S15C Series
Trapezoidal Pu lse
SD303C..S15C Series
Sinu soidal P ulse
TJ = 125°C , V RRM
= 1760V
TJ = 125°C, VRRM= 1760V
tp
d v/dt = 1000V/µs ; di/dt= 50A/µ s
tp
dv/dt = 1000V/µ s
1E1
1E 1
1 E 1
1 E2
1 E3
1 E4
1E2
1E 3
1E4
P u lse B a sew id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 jou les per pu lse
10
20 joules per p ulse
10
4
2
4
2
1
1
0.4
0.4
0.2
0.1
0.04
0.2
SD303C..S20C Series
Trapezoida l Pulse
TJ 125°C , V RRM= 1760V
S D303C..S20C Series
Sin usoida l Pu lse
=
TJ = 125°C, V RRM
= 1760V
tp
dv/dt = 1000V/µs; di/dt= 50A/µ s
tp
dv/dt = 1000V/µs
1E1
1 E2
1E 3
1 E4
1E1
1E2
1 E3
1E4
P u lse B a sew id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
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Document Number: 93174
Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
SD
30
3
C
25 S20
C
1
2
3
4
5
6
7
1
-
-
-
-
-
-
-
Diode
2
3
4
5
6
7
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95248
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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