SD803C14S10C [VISHAY]
Fast Recovery Diodes (Hockey PUK Version), 845 A; 快恢复二极管（曲棍球PUK版） ， 845一
| 型号： | SD803C14S10C |
| 厂家： | 
VISHAY |
| 描述： | Fast Recovery Diodes (Hockey PUK Version), 845 A |
| 文件： | 总8页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD803C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 845 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 1.5 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
B-43
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC B-43
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
• Designed and qualified for industrial level
IF(AV)
845 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
845
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
1326
IF(RMS)
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
11 295
11 830
640
IFSM
A
I2t
kA2s
583
VRRM
trr
400 to 1600
1.0 to 1.5
25
V
µs
TJ
°C
TJ
- 40 to 125
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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1
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
04
08
10
12
14
16
400
800
500
900
SD803C..S10C
1000
1200
1400
1600
1100
1300
1500
1700
45
SD803C..S15C
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
845 (420)
55 (75)
1326
11 295
11 830
9500
9945
640
UNITS
A
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
583
Maximum I2t for fusing
I2t
kA2s
451
100 % VRRM
reapplied
412
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
6400
1.02
kA2√s
Low level of threshold voltage
High level of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
1.32
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.38
mΩ
rf2
0.28
VFM
Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
1.89
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
IFM
Ipk
CODE
trr
t
rr AT 25 % IRRM
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
Qrr
(µC)
Irr
(A)
(µs)
(µs)
t
dir
dt
Qrr
S10
S15
1.0
1.5
2.0
3.2
45
87
34
51
IRM(REC)
1000
25
- 30
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.076
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.038
Mounting force, 10 %
Approximate weight
Case style
9800 (1000)
83
N (kg)
g
See dimensions - link at the end of datasheet
B-43
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.006
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
0.008
0.010
TJ = TJ maximum
K/W
60°
0.015
30°
0.026
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
130
130
120
SD 803C . . C Se r ie s
SD 803C . . C Se r ie s
(Single Side Cooled)
(Double Side Cooled)
R
(DC) = 0.076 K/W
120
110
100
90
R
(DC) = 0.038 K/W
thJ-hs
thJ-hs
110
100
90
Conduction Period
Conduction Angle
80
70
60
30°
90°
80
180°
120°
60°
50
90°
120°
60°
30°
180°
DC
70
40
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
200 400 600 800 1000 1200 1400
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1600
1400
1200
1000
800
600
400
200
0
130
120
110
100
90
SD803C..C Series
180°
120°
90°
(Single Side Cooled)
R
(DC) = 0.076 K/ W
thJ-hs
60°
30°
RM S Lim it
Conduction Period
80
30°
Conduction Angle
SD803C..C Series
60°
70
90°
120°
60
T = 125°C
180°
DC
J
50
0
100 200 300 400 500 600 700 800 900
Average Forward Current (A)
0
100 200 300 400 500 600 700
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
2200
130
120
110
100
90
SD 803C . . C Se r ie s
DC
180°
120°
90°
60°
30°
2000
1800
1600
1400
1200
1000
800
(Double Side Cooled)
R
(DC) = 0.038 K/ W
thJ-hs
Conduction Angle
RMS Lim it
80
Conduction Period
SD803C..C Series
30°
600
60°
70
90°
400
120°
T = 125°C
180°
60
J
200
0
50
0
200 400 600 800 1000 1200 1400
Average Forward Current (A)
0
100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
0.1
10000
9000
8000
7000
6000
5000
4000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
SD803C .. C Se r ie s
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
0.01
St e a d y St a t e V a lu e
R
= 0.076 K/W
thJ-hs
(Single Side Cooled)
R
= 0.038 K/W
thJ-hs
(Double Side Cooled)
(DC Operation)
SD 803C . . C Se r ie s
0.001
0.001 0.01
0.1
1
10
100
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
12000
2.2
Maximum Non Repetitive Surge Current
SD 803C . . S10C Se rie s
VersusPulse Train Duration.
11000
T = 125 °C; V = 30V
J
r
Initial T = 125°C
J
2.1
2
I
= 1000 A
10000
FM
No Voltage Reapplied
Sq u a re Pu lse
Ra t e d V
Re a p p lie d
RRM
9000
8000
7000
6000
5000
1.9
1.8
1.7
1.6
500 A
250 A
4000 SD803C..C Series
3000
10
100
0.01
0.1
Pulse Train Duration (s)
1
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Recovery Time Characteristics
10000
1000
130
I
= 1000 A
FM
120
110
100
90
Sq u a re Pu lse
500 A
80
250 A
70
T = 25° C
J
60
T = 125°C
J
100
50
40
SD 803C . . S10C Se rie s
SD 803C . . C Se rie s
30
T = 125 °C; V = 30V
J
r
10
20
0
0.5
InstantaneousForward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
1
1.5
2
2.5
3
3.5
4
4.5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Charge Characteristics
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
120
200
I
= 1000 A
FM
110
100
90
80
70
60
50
40
30
20
10
I
= 1000 A
FM
180
160
140
120
100
80
Sq u a r e Pu lse
Sq u a re Pu lse
500 A
250 A
500 A
250 A
SD 803C . . S10C Se r ie s
T = 125 °C; V = 30V
SD 803C . . S15C Se r ie s
T = 125 °C; V = 30V
60
J
r
J
r
40
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 13 - Recovery Current Characteristics
Fig. 15 - Recovery Charge Characteristics
4
140
I
= 1000 A
FM
130
120
110
100
90
SD 803C . . S15C Series
Sq u a re Pu lse
T = 125 °C; V = 30V
r
J
3.5
3
I
= 1000 A
FM
500 A
250 A
Sq u a re Pu lse
80
70
500 A
250 A
60
2.5
50
SD 803C . . S15C Series
T = 125 °C; V = 30V
40
r
J
30
2
10
20
100
10 20 30 40 50 60 70 80 90 100
Ra t e O f Fa ll Of Fo rw a rd Current - d i/ d t (A/ µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 14 - Recovery Time Characteristics
Fig. 16 - Recovery Current Characteristics
1E4
1E3
1E2
1E1
20 joulesperpulse
20 joules per pulse
10
10
4
4
2
2
1
1
0.4
0.4
0.2
0.2
0.1
0.1
0.04
0.02
0.01
0.04
SD 80 3C . . S10 C Se ri e s
Tr a p e zo id a l Pu lse
SD803C..S10C Series
Sinusoid a l Pulse
T = 125°C, VRRM = 800V
J
T = 125°C, VRRM = 800V
J
tp
dv/dt = 1000V/µs; di/dt=50A/µs
tp
dv/ dt = 1000V/ µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Pulse Ba sew id t h (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Vishay High Power Products
1E4
1E3
1E2
1E1
20 joulesper pulse
10
20 joulesper pulse
10
4
4
2
2
1
1
0.4
0.4
0.2
0.2
0.1
0.1
0.04
0.02
0.01
SD 8 0 3 C . . S1 5 C Se rie s
Tr a p e zo id a l Pu lse
SD 8 0 3 C . . S1 5 C Se rie s
Sinusoidal Pulse
T = 125°C, VRRM = 800V
J
T = 125°C, VRRM = 800V
J
tp
dv/dt = 1000V/ µs; di/ dt=50A/ µs
tp
dv/dt = 1000V/µs
1E1
1E2
Pulse Ba sew id t h (µs)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
ORDERING INFORMATION TABLE
Device code
SD
80
3
C
16 S15
C
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95249
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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