SE10PBHM3/85A [VISHAY]
DIODE GEN PURP 100V 1A DO220AA;型号: | SE10PBHM3/85A |
厂家: | VISHAY |
描述: | DIODE GEN PURP 100V 1A DO220AA |
文件: | 总5页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SE10PB, SE10PD, SE10PG, SE10PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
eSMP® Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• Typical IR less than 0.1 μA
• ESD capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMP (DO-220AA)
• AEC-Q101 qualified
Cathode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
1.0 A
VRRM
IR
100 V, 200 V, 400 V, 600 V
Base P/N-M3
-
halogen-free, RoHS-compliant, and
5 μA
0.86 V
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
VF at IF = 1.0 A
TJ max.
175 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Package
SMP (DO-220AA)
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE10PB
SE10PD
10D
SE10PG
10G
SE10PJ
10J
UNIT
Device marking code
10B
Max. repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
100
200
400
600
V
A
1.0
25
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
Revision: 20-Feb-2020
Document Number: 89024
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10PB, SE10PD, SE10PG, SE10PJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.960
0.860
-
MAX.
1.05
0.95
5.0
UNIT
TA = 25 °C
IF = 1.0 A
Max. instantaneous
forward voltage
(1)
VF
V
TA = 125 °C
TA = 25 °C
Rated VR
(2)
Max. reverse current
IR
μA
TA = 125 °C
4.8
50
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Max. reverse recovery time
Typical junction capacitance
trr
780
7.0
-
-
ns
4.0 V, 1 MHz
CJ
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE10PB
SE10PD
SE10PG
SE10PJ
UNIT
(1)
RθJA
105
25
(1)
Typical thermal resistance
°C/W
RθJL
(1)
RθJC
30
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body.
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
C = 100 pF, R = 1.5 kΩ
C = 200 pF, R = 0 Ω
C = 100 pF, R = 1.5 kΩ
C = 200 pF, R = 0 Ω
C = 150 pF, R = 330 Ω
C = 150 pF, R = 330 Ω
SYMBOL
CLASS
VALUE
> 8 kV
AEC-Q101-001
AEC-Q101-002
JESD22-A114
JESD22-A115
Human body model (contact mode)
Machine model (contact mode)
H3B
M4
3B
C
> 400 V
> 8 kV
Human body model (contact mode)
Machine model (contact mode)
VC
> 400 V
> 8 kV
Human body model (contact mode)
Human body model (air-discharge mode) (1)
4
IEC 61000-4-2 (2)
4
> 15 kV
Notes
(1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
ORDERING INFORMATION (Example)
PREFERRED P/N
SE10PJ-M3/84A
SE10PJ-M3/85A
SE10PJHM3/84A (1)
SE10PJHM3/85A (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.024
84A
85A
84A
85A
3000
10 000
3000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.024
0.024
0.024
10 000
Note
(1)
Automotive grade
Revision: 20-Feb-2020
Document Number: 89024
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10PB, SE10PD, SE10PG, SE10PJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
10000
1000
100
TJ= 175 °C
TJ= 150 °C
Resistive or Inductive Load
1
0.1
TJ= 25 °C
TJ= -40 °C
0.01
0.001
TL Measured
at the Cathode Band Terminal
10
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
0
25
50
75
100
125
150
175
Lead Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Instantaneous Forward Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
100
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.3
D = 0.2
D = 1.0
10
D = 0.1
T
1
D = tp/T
0.8
tp
0.1
0
0.2
0.4
0.6
1.0
1.2
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Axis Title
10
10000
1000
100
TJ= 175 °C
T = 150 °C
J
1
TJ= 25 °C
TJ= -40 °C
0.1
10
0.5
0.7
0.9
1.1
1.3
1.5
Instantaneous Forward Voltage (V)
Fig. 3 - Forward Power Loss Characteristics
Revision: 20-Feb-2020
Document Number: 89024
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10PB, SE10PD, SE10PG, SE10PJ
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.032 (0.80)
0.087 (2.20)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.050
(1.27)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Revision: 20-Feb-2020
Document Number: 89024
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
Document Number: 91000
1
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