SE60PWBC [VISHAY]
Surface-Mount ESD Capability Rectifier;
| 型号： | SE60PWBC |
| 厂家： | 
VISHAY |
| 描述： | Surface-Mount ESD Capability Rectifier |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC
www.vishay.com
Vishay General Semiconductor
Surface-Mount ESD Capability Rectifier
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
K
1
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
SlimDPAK (TO-252AE)
- Automotive ordering code: base P/NHM3
PIN 1
PIN 2
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEATSINK
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
General purpose, power line polarity protection, in both
industry and automotive applications.
3
D
3D Models
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
PRIMARY CHARACTERISTICS
IF(AV)
2 x 3 A
VRRM
IFSM
100 V, 200 V, 400 V, 600 V
42 A
Base P/NHM3
- halogen-free, RoHS-compliant, and
AEC-Q101 qualified
VF at IF = 3 A (TA = 125 °C)
TJ max.
0.94 V
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102, M3 and HM3 suffix meets
JESD 201 class 2 whisker test
175 °C
Package
SlimDPAK (TO-252AE)
Common cathode
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SE60PWBC SE60PWDC SE60PWGC SE60PWJC UNIT
Device marking code
SE60PWBC SE60PWDC SE60PWGC SE60PWJC
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
A
per device
per diode
6
3
Maximum average forward rectified current
(fig. 1)
(1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
42
A
IFSM
Peak forward surge current 1 ms square wave on rated load
Operating junction and storage temperature range
80
A
TJ, TSTG
-55 to +175
°C
Note
(1)
With infinite heatsink
Revision: 16-Apr-2020
Document Number: 87533
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.94
1.03
0.84
0.94
-
MAX.
UNIT
IF = 1.5 A
-
1.1
-
TA = 25 °C
IF = 3.0 A
IF = 1.5 A
IF = 3.0 A
(1)
Maximum Instantaneous forward voltage
VF
V
TA = 125 °C
1.01
10
150
-
TA = 25 °C
(2)
Reverse current
Rated VR
IR
μA
TA = 125 °C
12
Typical reverse recovery time
Typical junction capacitance
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
trr
1200
22
ns
CJ
-
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE60PWBC
SE60PWDC
SE60PWGC
SE60PWJC
UNIT
(1)(2)
RθJA
63
Typical thermal resistance per device
°C/W
(3)
RθJM
2.3
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount
(2)
(3)
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC-Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 kΩ
VC
H3B
> 8 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
SE60PWJC-M3/I
SE60PWJCHM3/I (1)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.20
0.20
I
I
4500
4500
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 16-Apr-2020
Document Number: 87533
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
1000
100
10
TM = 160 °C, RthJM = 2.3 °C/W
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TA = 25 °C, RthJA = 63 °C/W
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0.001
TJ = - 40 °C
0
25
50
75
100
125
150
175
10 20 30 40 50 60 70 80 90 100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
4.0
100
TJ = 25 °C
f = 1.0 MHz
D = 0.8
3.5
D = 0.5
Vsig = 50 mVp-p
3.0
D = 0.3
D = 1.0
2.5
2.0
1.5
1.0
0.5
0.0
D = 0.2
D = 0.1
10
T
D = tp/T
tp
1
0
0.5
1
1.5
2
2.5
3
3.5
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
100
Junction to Ambient
TJ = 175 °C
TJ = 150 °C
10
1
TJ = 125 °C
1
C
°
TJ = 100
TJ = 75 °C
TJ = 25 °C
0.1
0.01
TJ = -40 °C
0.1
0.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.8
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 16-Apr-2020
Document Number: 87533
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimDPAK (TO-252AE)
(1.40)
(1.20)
0.055
0.047
(0.41)
(0.25)
0.016
0.010
(6.32)
(6.08)
0.249
0.239
(0.70)
(0.30)
0.028
0.012
(6.72)
(6.48)
0.265
0.255
(9.40)
(8.60)
0.370
0.339
(0.20)
(0.00)
(1.40)
(1.00)
0.008
0.000
0.055
0.039
0.090
(2.29)
NOM.
0.180
(4.57)
NOM.
Mounting Pad Layout
0.240
MIN.
(5.70)
(5.30)
0.224
0.209
(6.10)
0.205
(5.20)
0.235
(5.97)
NOM.
MIN.
0.386
(9.80)
REF.
0.075
(1.90)
MIN.
MIN.
(0.90)
(0.70)
0.035
0.028
0.090
(2.29)
0.055
(1.40)
NOM.
Revision: 16-Apr-2020
Document Number: 87533
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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