SF30BG [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,;
| 型号： | SF30BG |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, 功效 二极管 |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF30AG–SF30JG
Vishay Lite–On Power Semiconductor
3.0A Super–Fast Glass Passivated Rectifiers
Features
Glass passivated die construction
Diffused junction
Super–fast switching for high efficiency
High current capability and low forward voltage
drop
Surge overload rating to 150A peak
Low reverse leakage current
14 423
Plastic material – UL Recognition flammability
classification 94V–0
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
50
Unit
V
V
V
V
V
V
V
V
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
SF30AG
SF30BG
SF30CG
SF30DG
SF30FG
SF30GG
SF30HG
SF30JG
V
RRM
=V
100
150
200
300
400
500
600
150
3
RWM
=V
R
Peak forward surge current
Average forward current
I
A
A
FSM
T =55 C
A
I
FAV
Junction and storage temperature range
T =T
–65...+150
C
j
stg
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
I =3A
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
SF30AG–DG
SF30FG–GG
SF30HG–JG
V
F
V
F
V
F
0.95
1.3
1.5
10
V
V
V
F
T =25 C
I
I
A
A
R
T =100 C
A
100
35
A
ns
R
Reverse recovery time I =1A, I =0.5A,
SF30AG–DG
SF30FG–GG
SF30HG–JG
SF30AG–GG
SF30HG–JG
t
rr
t
rr
t
rr
F
R
I =0.25A
rr
40
ns
50
ns
Diode capacitance
V =4V, f=1MHz
R
C
C
75
50
32
pF
pF
K/W
D
D
Thermal resistance
junction to ambient
R
thJA
Rev. A2, 24-Jun-98
1 (4)
SF30AG–SF30JG
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25 C unless otherwise specified)
150
3.0
2.4
1.8
1.2
0.6
0
Single phase half–wave
60 Hz resistive or inductive load
100
50
0
25
50 75 100 125 150 175 200
1
10
100
15434
15436
T
amb
– Ambient Temperature ( °C )
Number of Cycles at 60 Hz
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
10
SF30AG–
SF30DG
SF30AG–
SF30GG
SF30FG–
SF30GG
SF30HG–
SF30JG
1.0
10
SF30HG–
SF30JG
0.1
T = 25°C
j
T = 25°C
j
Pulse Width = 300 µs
f = 1 MHz
0.01
1
0.6
0.8
1.0
1.2
1.4
1
10
– Reverse Voltage ( V )
100
15435
V – Forward Voltage ( V )
15437
V
R
F
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
SF30AG–SF30JG
Vishay Lite–On Power Semiconductor
Dimensions in mm
14445
Case: molded plastic
Polarity: cathode band
Approx. weight: 1.12 grams
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
SF30AG–SF30JG
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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