SFH601-2-X009 [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SMD, 6 PIN;
| 型号： | SFH601-2-X009 |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SMD, 6 PIN 输出元件 光电 |
| 文件： | 总10页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH601
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
• Isolation test voltage (1.0 s), 5300 VRMS
• VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA
1
6
A
C
B
C
E
• Built to conform to VDE requirements
• Highest quality premium device
• Long term stability
5
4
2
3
NC
• Storage temperature, - 55 ° to + 150 °C
• Lead (Pb)-free component
i179004
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
DESCRIPTION
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
The SFH601 is an optocoupler with a gallium arsenide LED
emitter which is optically coupled with a silicon planar
phototransistor detector. The component is packaged in a
plastic plug-in case 20 AB DIN 41866.
The coupler transmits signals between two electrically
isolated circuits.
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH601-1
CTR 40 % to 80 %, DIP-6
SFH601-2
CTR 63 % to 125 %, DIP-6
SFH601-3
CTR 100 % to 200 %, DIP-6
SFH601-4
CTR 160 % to 320 %, DIP-6
SFH601-1X006
SFH601-1X007
SFH601-1X009
SFH601-2X006
SFH601-2X007
SFH601-2X009
SFH601-3X006
SFH601-3X007
SFH601-3X009
SFH601-4X006
SFH601-4X007
SFH601-4X009
CTR 40 % to 80 %, DIP-6 400 mil (option 6)
CTR 40 % to 80 %, SMD-6 (option 7)
CTR 40 % to 80 %, SMD-6 (option 9)
CTR 63 % to 125 %, DIP-6 400 mil (option 6)
CTR 63 % to 125 %, SMD-6 (option 7)
CTR 63 % to 125 %, SMD-6 (option 9)
CTR 100 % to 200 %, DIP-6 400 mil (option 6)
CTR 100 % to 200 %, SMD-6 (option 7)
CTR 100 % to 200 %, SMD-6 (option 9)
CTR 160 % to 320 %, DIP-6 400 mil (option 6)
CTR % 160 to 320 %, SMD-6 (option 7)
CTR % 160 to 320 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
VR
IF
6
V
mA
A
60
t = 10 µs
IFSM
Pdiss
2.5
100
mW
Document Number: 83663
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
593
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter voltage
Emitter base voltage
VCE
VEBO
IC
100
7
V
V
50
mA
mA
mW
Collector current
t = 1.0 ms
IC
100
150
Power dissipation
Pdiss
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
RIO
Tstg
Tamb
Tj
≥ 1012
≥ 1011
- 55 to + 150
- 55 to +100
100
Ω
Ω
°C
°C
°C
Isolation resistance
V
IO = 500 V, Tamb = 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
Soldering temperature (2)
Tsld
260
°C
Notes
(1)
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2)
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.65
10
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
VBR
IR
1.25
V
V
Breakdown voltage
Reverse current
I
R = 10 µA
R = 6 V
6
V
0.01
25
µA
pF
K/W
Capacitance
VF = 0 V, f = 1 MHz
CO
Thermal resistance
OUTPUT
Rthja
750
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
f = 1 mHz, VCE = 5 V
f = 1 mHz, VCB = 5 V
f = 1 mHz, VEB = 5 V
CCE
CCB
CEB
Rthja
ICEO
ICEO
ICEO
ICEO
6.8
8.5
11
500
2
pF
pF
pF
K/W
nA
nA
nA
nA
SFH601-1
SFH601-2
SFH601-3
SFH601-4
50
50
2
Collector emitter leakage current
VCE =10 V
5
100
100
5
COUPLER
Saturation voltage collector emitter
Capacitance (input to output)
IF = 10 mA, IC = 2.5 mA
VI-O = 0, f = 1 MHz
VCEsat
CIO
0.25
0.6
0.4
V
pF
Note
amb = 25 °C, unless otherwise specified.
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
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594
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
Rev. 1.4, 10-Dec-08
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
CTR
MIN.
40
TYP.
MAX.
80
UNIT
%
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
CTR
63
125
200
320
%
IF = 10 mA
IF = 1 mA
CTR
100
160
13
%
CTR
%
IC/IF at VCE = 5.0 V
CTR
30
45
70
90
%
CTR
22
%
CTR
34
%
CTR
56
%
Note
Current transfer ratio and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Current
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCC = 5 V, RL = 75 Ω
VCC = 5 V, RL = 75 Ω
IF
tr
10
2
mA
µs
µs
µs
µs
Rise time
Fall time
V
V
CC = 5 V, RL = 75 Ω
CC = 5 V, RL = 75 Ω
tf
2
Turn-on time
Turn-off time
SATURATED
ton
toff
3
VCC = 5 V, RL = 75 Ω
2.3
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
SFH601-1
SFH601-2
SFH601-3
SFH601-4
IF
IF
IF
IF
tr
20
10
10
0.5
2
mA
mA
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Current
tr
3
Rise time
Fall time
tr
3
tr
4.6
11
14
14
15
3
tf
tf
tf
tf
ton
ton
ton
ton
toff
toff
toff
toff
4.2
4.2
6
Turn-on time
Turn-off time
18
23
23
25
I
R
= 75 Ω
L
F
I
1 k Ω
F
V
= 5 V
V
= 5 V
CC
CC
I
C
47 Ω
isfh601_01
isfh601_02
Fig. 1 - Linear Operation (without Saturation)
Fig. 2 - Switching Operation (with Saturation)
Document Number: 83663
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
595
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Climatic classification
(according to IEC 68 part 1)
55/100/21
Comparative tracking index
CTI
175
8000
890
399
VIOTM
V
VIORM
V
PSO
700
400
175
mW
mA
°C
ISI
TSI
Creepage distance
Clearance distance
Creepage distance
Clearance distance
standard DIP-6
standard DIP-6
400 mil DIP-6
400 mil DIP-6
7
7
8
8
mm
mm
mm
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
103
103
DC
Pulsmode
Pulse
(TA = 0 °C, VCE = 5.0 V)
(TA = - 25 ˚C, VCE = 5.0 V)
IC/IF = f (IF)
5
5
IC/IF = f (IF)
4
4
3
2
3
2
102
102
1
1
5
5
100
100
10-1
100
101
10-1
100
101
5
5
2
5
5
2
isfh601_03
IF (mA)
IF (mA)
isfh601_04
Fig. 3 - Current Transfer Ratio vs. Diode Current
Fig. 4 - Current Transfer Ratio vs. Diode Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
Rev. 1.4, 10-Dec-08
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
3
3
10
10
DC
DC
Pulsbetrieb
Pulse
Pulsbetrieb
Pulse
5
5
4
3
2
4
3
V
= 5.0 V)
CE
I
/I = f (I )
C F F
2
1
2
2
10
10
1
5
5
(I = 10 mA, V
= 5.0 V)
CE
F
I
/I = f (T)
C
F
0
1
10
10
-1
0
1
- 25
0
25
50 °C 75
10
5
10
5
10
2
IF (mA)
TA(°C)
isfh601_08
isfh601_05
Fig. 5 - Current Transfer Ratio vs. Diode Current
Fig. 8 - Current Transfer Ratio vs. Diode Current
3
10
30
DC
Pulsbetrieb
Pulse
T
= 50 °C, V
= 5.0 V)
)
F
DC
A
CE
Pulsbetrieb
Pulse
I
/I = f (I
C
F
5
I
= 40 µA
B
4
20
10
3
2
I
I
= 30 µA
= 20 µA
B
B
2
10
1
5
I
= f (V )
CE
C
(I = 0)
I
= 10 µA
B
F
I
I
=
=
5 µA
2 µA
B
B
0
10
0
-1
0
1
10
5
10
5
10
2
0
5
10
15
V
CE
IF (mA)
isfh601_06
isfh601_09
Fig. 6 - Current Transfer Ratio vs. Diode Current
Fig. 9 - Transistor Characteristics
3
10
30
DC
Pulsbetrieb
Pulse
T
= 75 °C, V
= 5.0 V)
)
F
DC
Pulsbetrieb
Pulse
A
CE
I
=
14 mA
F
I
/I = f (I
C
F
5
I
I
I
=
=
=
12 mA
10 mA
8 mA
4
F
F
F
3
2
20
10
2
10
I
= f (V )
CE
C
1
I
I
=
=
6 mA
4 mA
5
F
F
I
=
1 mA
I
=
2 mA
F
F
0
10
0
-1
0
1
10
5
10
5
10
2
0
5
10
15
V
I
F (mA)
CE
isfh601_07
isfh601_10
Fig. 7 - Current Transfer Ratio vs. Diode Current
Fig. 10 - Output Characteristics
Document Number: 83663
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
597
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
1.2
1.1
1.0
0.9
1.0
0.9
VCEsat = f (IC)
25°
50°
75°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IF = 2 x IC
IF = 3 x IC
10- 1
100
101
102
100
101
102
isfh601_14
isfh601_11
IF (mA)
IC (mA)
Fig. 11 - Forward Voltage
Fig. 14 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2
0
1.0
10
I
= f (V, T)
CEO
(I = 0)
5
V
= f (I )
C
F
CEsat
I
= I
C
F
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 40 V
CE
CE
V
= 10 V
-1
10
5
-2
I
= 2 x I
C
10
F
I
= 3 x I
F
C
5
-3
10
0
1
2
10
5
10
5
10
- 25
0
25
50
A (°C)
75
100
I
(mA)
T
C
isfh601_15
isfh601_12
Fig. 12 - Collector Emitter Off-state Current
Fig. 15 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3
1.0
1.0
V
= f (I )
C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
CEsat
V
= f (I )
C
CEsat
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 3 x I
C
F
I
= I
C
F
I
= 2 x I
= 3 x I
F
C
I
F
C
0.1
0
100
101
102
0
1
2
10
5
I
10
(mA)
5
10
isfh601_13
C
IC (mA)
isfh601_16
Fig. 13 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1
Fig. 16 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-4
www.vishay.com
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
Rev. 1.4, 10-Dec-08
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
104
120
D = 0
0.005
0.01
0.02
0.05
0.1
tp
IF = f (TA)
tp
T
IF
D=
T
90
60
30
0
103
102
0.2
0.5
DC
D = parameter, IF = f(tp)
101
10- 5 10- 4 10- 3 10- 2 10- 1 100
101
0
25
50
75
100
tp (s)
isfh601_17
isfh601_19
TA (°C)
Fig. 17 - Permissible Pulse Load
Fig. 19 - Permissible Forward Current Diode
200
150
100
50
P
= f (T )
A
tot
Transistor
Diode
0
0
25
50
75
100
isfh601_18
TA (°C)
Fig. 18 - Permissible Power Dissipation for Transistor and Diode
PACKAGE DIMENSIONS in inches (millimeters)
Pin one ID
2
1
3
0.248 (6.30)
0.256 (6.50)
ISO method A
4
5
6
0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
typ.
(0.45)
0.048
0.039
(1.00)
min.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18°
4°
typ.
0.114 (2.90)
0.031 (0.80) min.
0.130 (3.0)
0.010 (0.25)
0.031 (0.80)
typ.
0.300 to 0.347
(7.62 to 8.81)
3° to 9°
0.018 (0.45)
0.035 (0.90)
0.022 (0.55)
i178004
0.100 (2.54) typ.
Document Number: 83663
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
599
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
Option 6
Option 9
Option 7
0.375 (9.53)
0.395 (10.03 )
0.300(7.62)
typ.
0.407(10.36)
0.391(9.96)
0.307(7.8)
0.291(7.4)
0.300 (7.62)
ref.
0.028 (0.7)
0.180(4.6)
0.160(4.1)
0.0040 (0.102)
0.012 (0.30 ) typ.
0.0098 (0.249)
0.315(8.0)
min.
0.020 (0.51)
0.040 (1.02)
0.014(0.35)
0.010(0.25)
0.331(8.4)
15° max.
min.
0.315 (8.00)
0.400(10.16)
0.430(10.92)
min.
0.406(10.3)
max.
18450
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600
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
Rev. 1.4, 10-Dec-08
SFH601
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83663
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
601
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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