SFH601-4 [VISHAY]
Optocoupler, Phototransistor Output, With Base Connection; 光电耦合器，光电晶体管输出，带底座的连接
| 型号： | SFH601-4 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, With Base Connection |
| 文件： | 总9页 (文件大小：2341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH601
Vishay Semiconductors
VISHAY
Optocoupler, Phototransistor Output, With Base Connection
Features
• Isolation Test Voltage (1.0 s), 5300 V
RMS
• V
0.25 (≤ 0.4) V, I = 10 mA, I = 2.5 mA
F C
CEsat
1
6
A
C
B
C
E
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
5
4
2
3
NC
• Storage Temperature, - 55 ° to + 150 °C
• Lead-free component
Pb
e3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb-free
i179004
Agency Approvals
Order Information
• UL1577, File No. E52744 System Code H or J,
Double Protection
Part
Remarks
SFH601-1
CTR 40 - 80 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
SFH601-2
SFH601-3
SFH601-4
• CSA 93751
SFH601-1X006
SFH601-1X007
SFH601-1X009
SFH601-2X006
SFH601-2X007
SFH601-2X009
SFH601-3X006
SFH601-3X007
SFH601-3X009
SFH601-4X006
SFH601-4X007
SFH601-4X009
CTR 40 - 80 %, DIP-6 400 mil (option 6)
CTR 40 - 80 %, SMD-6 (option 7)
• BSI IEC60950 IEC60065
CTR 40 - 80 %, SMD-6 (option 9)
Description
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CTR 63 - 125 %, SMD-6 (option 7)
CTR 63 - 125 %, SMD-6 (option 9)
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CTR 100 - 200 %, SMD-6 (option 7)
CTR 100 - 200 %, SMD-6 (option 9)
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CTR 160 - 320 %, SMD-6 (option 7)
CTR 160 - 320 %, SMD-6 (option 9)
The SFH601 is an optocoupler with a Gallium Ars-
enide LED emitter which is optically coupled with a sil-
icon planar phototransistor detector. The component
is packaged in a plastic plug-in case 20 AB DIN
41866.
The coupler transmits signals between two electri-
cally isolated circuits.
For additional information on the available options refer to
Option Information.
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
1
SFH601
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
DC forward current
IF
60
2.5
100
mA
A
Surge forward current
Total power dissipation
t =10 µs
IFSM
Pdiss
mW
Output
Parameter
Test condition
Symbol
VCE
Value
100
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current
VEBO
IC
7.0
50
V
mA
mA
mW
t = 1.0 ms
IC
100
150
Power dissipation
Pdiss
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage 1)
Creepage
t = 1.0 s
VRMS
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Clearance
Isolation thickness between
emitter and detector
Comparative tracking 2)
Isolation resistance
175
≥ 1012
≥ 1011
V
V
IO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Tstg
Tamb
Tj
Ω
Ω
Storage temperature range
Ambient temperature range
Junction temperature
- 55 to + 150
°C
°C
°C
°C
- 55 to + 100
100
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
1) between emitter and detector referred to climate DIN 40046, part 2, Nov. 74
2) index per DIN IEC 60112/VDE0303, part 1
www.vishay.com
2
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 60 mA
R = 10 µA
R = 6.0 V
Symbol
VF
Min
6.0
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
Breakdown voltage
Reverse current
Capacitance
I
VBR
IR
V
µA
V
0.01
25
10
VF = 0 V, f = 1.0 MHz
CO
pF
Thermal resistance
Rthja
750
K/W
Output
Parameter
Test condition
Part
Symbol
CCE
Min
Typ.
6.8
Max
Unit
Collector-emitter capacitance
f = 1.0 MHz, VCE = 5.0 V
pF
pF
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
f = 1.0 MHz, VCB = 5.0 V
f = 1.0 MHz, VEB = 5.0 V
CCB
CEB
8.5
11
pF
RTHJamb
ICEO
500
2.0
K/W
nA
Collector-emitter leakage
current
V
CE = 10 V
SFH601-1
50
SFH601-2
SFH601-3
SFH601-4
ICEO
ICEO
ICEO
2.0
5.0
5.0
50
nA
nA
nA
100
100
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
0.25
Max
0.4
Unit
Saturation voltage, collector-
emitter
IF = 10 mA, IC = 2.5 mA
V
Capacitance (input-output)
VI-O = 0 , f = 1.0 MHz
CIO
0.6
pF
Current Transfer Ratio
Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number
Parameter
Test condition
IF = 10 mA
Part
Symbol
CTR
Min
Typ.
30
Max
80
Unit
IC/IF at VCE = 5.0 V
SFH601-1
40
%
SFH601-2
SFH601-3
SFH601-4
SFH601-1
CTR
CTR
CTR
CTR
63
100
160
13
125
200
320
%
%
%
%
IF = 1.0 mA
SFH601-2
SFH601-3
SFH601-4
CTR
CTR
CTR
22
34
56
45
70
90
%
%
%
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
3
SFH601
Vishay Semiconductors
VISHAY
Switching Non-saturated
Parameter
Current
Rise time
Fall time
Turn-on time
ton
Turn-off time
toff
Test condition
VCC = 5.0 V, RL = 75 Ω
Symbol
Unit
IF
tr
tf
mA
10
µs
µs
µs
2.0
2.0
3.0
2.3
Switching Saturated
Parameter
Current
Rise time
tr
Fall time
Tutn-on time
ton
Turn-off time
toff
Test condition
VCEsat = 0.25 (≤ 0.4) V
Symbol
IF
tf
Unit
mA
20
µs
µs
11
14
14
15
µs
µs
18
23
23
25
SFH601-1
SFH601-2
SFH601-3
SFH601-4
2.0
3.0
3.0
4.6
3.0
4.2
4.2
6.0
10
10
0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
(T = –25°C, V
= 5.0 V)
A
CE
I
/I = f (I
)
C
F
F
IF
RL = 75 Ω
VCC = 5 V
IC
47 Ω
isfh600_03
isfh601_01
Figure 1. Linear Operation ( without Saturation)
Figure 3. Current Transfer Ratio vs. Diode Current
DC
Pulsbetrieb
Pulse
(T = 0°C, V
= 5.0 V)
CE
A
I
/I = f (I )
F F
IF
1 KΩ
C
VCC = 5 V
isfh601_02
isfh601_04
Figure 2. Switching Operation (with Saturation)
Figure 4. Current Transfer Ratio vs. Diode Current
www.vishay.com
4
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
Vishay Semiconductors
VISHAY
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
(V
= 5.0 V)
/I = f (I )
F F
CE
I
C
(I = 10 mA, V
= 5.0 V)
CE
F
I
/I = f (T)
C
F
isfh601_05
isfh601_08
Figure 5. Current Transfer Ratio vs. Diode Current
Figure 8. Current Transfer Ratio vs. Diode Current
DC
DC
Pulsbetrieb
Pulse
Pulsbetrieb
Pulse
(T = 50°C, V
CE
C
= 5.0 V)
A
I
/I = f (I )
F F
I
= f (V )
CE
C
F
(I = 0)
isfh601_06
isfh601_09
Figure 6. Current Transfer Ratio vs. Diode Current
Figure 9. Transistor Characteristics
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
(T = 75°C, V
= 5.0 V)
CE
A
I
/I = f (I )
F F
C
I
=f(V
)
CE
C
isfh601_07
isfh601_10
Figure 7. Current Transfer Ratio vs. Diode Current
Figure 10. Output Characteristics
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
5
SFH601
Vishay Semiconductors
VISHAY
V
= f (I )
F
F
V
= f (I )
C
CEsat
isfh601_11
isfh601_12
isfh601_13
isfh601_14
Figure 11. Forward Voltage
Figure 14. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2
I
= f (V,T)
CEO
V
= f (I )
C
CEsat
(I = 0)
F
isfh601_15
Figure 12. Collector-Emitter Off-state Current
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3
V
CEsat
V
= f (I )
C
V
= f (I
)
C
CEsat
CEsat
mA
isfh601_16
Figure 13. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1
Figure 16. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-4
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6
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
Vishay Semiconductors
VISHAY
D = parameter,
= f (t
I
)
p
F
isfh601_17
Figure 17. Permissible Pulse Load
P
= f (T )
A
tot
isfh601_18
Figure 18. Permissible Power Dissipation for Transistor and Diode
P
= f (T )
A
tot
isfh601_19
Figure 19. Permissible Forward Current Diode
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
7
SFH601
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
.430 (10.92)
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8
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
9
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