SFH608-3-X006 [VISHAY]
Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS; 光电耦合器，光电晶体管输出，低输入电流，具有基本连接， 5300 VRMS
| 型号： | SFH608-3-X006 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS |
| 文件： | 总8页 (文件大小：1617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH608
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current, With
Base Connection, 5300 V
RMS
Features
• Very High CTR at I = 1.0 mA, V = 0.5 V
F
CE
• Specified Minimum CTR at I = 0.5 mA,
F
1
6
A
C
B
C
E
• V = 1.5 V ≥ 32 % (typ. 120 %)
CE
• Good CTR Linearity with Forward Current
• Low CTR Degradation
5
4
2
3
NC
• High Collector-Emitter Voltage V
• Isolation Test Voltage: 5300 V
• Low Current Input
= 55 V
CEO
RMS
Pb
e3
Pb-free
i179004
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Description
The SFH 608 is an optocoupler designed for high cur-
rent transfer ratio at low input currents with the output
transistor saturated. This makes the device ideal for
low current switching applications. The SFH608 is
packaged in a six pin plastic DIP.
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Order Information
Part
Remarks
SFH608-2
CTR 63 - 125 %, DIP-6
SFH608-3
CTR 100 - 200 %, DIP-6
SFH608-4
CTR 160 - 320 %, DIP-6
SFH608-5
CTR 250 - 500 %, DIP-6
Applications
Telecommunications
Industrial Controls
Office Machines
SFH608-2-X006
SFH608-2-X007
SFH608-2-X009
SFH608-3-X006
SFH608-3-X007
SFH608-4-X006
SFH608-4-X007
SFH608-5-X007
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CTR 63 - 125 %, SMD-6 (option 7)
CTR 63 - 125 %, SMD-6 (option 9)
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CTR 100 - 200 %, SMD-6 (option 7)
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CTR 160 - 320 %, SMD-6 (option 7)
CTR 250 - 500 %, SMD-6 (option 7)
Microprocessor System Interfaces
For additional information on the available options refer to
Option Information.
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
1
SFH608
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
DC Forward current
Surge forward current
Total power dissipation
IF
50
2.5
70
mA
A
t ≤ 10 µs
IFSM
Pdiss
mW
Output
Parameter
Test condition
Symbol
VCE
Value
55
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
VCBO
VEBO
IC
55
7.0
50
V
V
mA
Surge collector current
Total power dissipation
tp ≤ 1.0 ms
100
150
mA
Pdiss
mW
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage (between t = 1.0 s
emitter and detector, refer to
climate DIN 40046 part 2
Nov. 74)
VRMS
Creepage
Clearance
≥ 7.0
≥ 7.0
175
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Ω
Ω
V
Storage temperature range
Operating temperature range
Soldering temperature
Tstg
Tamb
Tsld
- 55 to + 150
°C
°C
°C
- 55 to + 100
260
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
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2
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 5.0 mA
R = 10 µA
Symbol
VF
Min
6.0
Typ.
1.1
Max
1.5
Unit
V
Forward voltage
Reverse voltage
Reverse current
Capacitance
I
VR
IR
V
µA
V
V
R = 6.0 V
R = 0 V, f = 1.0 MHz
0.01
25
10
CO
Rthja
pF
Thermal resistance
1070
K/W
Output
Parameter
Test condition
ICE = 10 µA
EB = 10 µA
Symbol
VCEO
Min
55
Typ.
Max
Unit
V
Voltage, collector-emitter
Voltage, emitter-base
I
VEBO
CCE
CCB
CEB
7.0
V
pF
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
V
V
V
CE = 5.0, f = 1.0 MHz
CE = 5.0, f = 1.0 MHz
CE = 5.0, f = 1.0 MHz
10
16
pF
10
pF
Rthja
ICEO
500
10
K/W
nA
Collector-emitter leakage
current
V
CE = 10 V
200
Coupler
Parameter
Test condition
Part
Symbol
CC
Min
Typ.
0.60
Max
0.4
Unit
Coupling capacitance
pF
V
Saturation voltage, collector-
emitter
I
C = 0.32 mA, IF = 1.0 mA
SFH608-2
VCEsat
0.25
IC = 0.5 mA, IF = 1.0 mA
SFH608-3
SFH608-4
SFH608-5
VCEsat
VCEsat
VCEsat
0.25
0.25
0.25
0.4
0.4
0.4
V
V
V
I
I
C = 0.8 mA, IF = 1.0 mA
C = 01.25 mA, IF = 1.0 mA
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
63
Typ.
Max
Unit
%
Coupling Transfer Ratio
IF = 1.0 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IF = 1.0 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IF = 1.0 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IF = 1.0 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
SFH608-2
125
200
320
500
SFH608-2
SFH608-3
SFH608-3
SFH608-4
SFH608-4
SFH608-5
SFH608-5
CTR
CTR
CTR
CTR
CTR
CTR
CTR
32
100
50
75
%
%
%
%
%
%
%
120
200
300
160
80
250
125
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
3
SFH608
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
Symbol
ton
Min
Typ.
8.0
Max
Unit
Turn-on time
IC = 2.0 mA (to adjust by IF),
µs
RL = 100 Ω, VCC = 5.0 V
Rise time
I
C = 2.0 mA (to adjust by IF),
tr
toff
tf
5.0
7.5
7.0
µs
µs
µs
RL = 100 Ω, VCC = 5.0 V
Turn-off time
Fall time
IC = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC= 5.0 V
I
C = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC = 5.0 V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
RL
IC
VCC
V
C
= 0.5 V,
47 Ω
CE
TR
= f (T , I )
A F
isfh608_01
isfh608_03
Figure 1. Switching Schematic
Figure 3. Current Transfer Ratio (typ.)
V
C
= 1.5 V,
CE
TR
I
= 1.0 mA,
F
= f (T , I )
A F
V
t
= 5.0 V, t , t ,
, t , = f (R )
L
CE
ON R
OFF
F
isfh608_04
isfh608_02
Figure 2. Switching Times
Figure 4. Current Transfer Ratio (typ.)
www.vishay.com
4
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
V
= f (I )
F
F
I
= f
CE
(V , I
)
F
CE
isfh608_08
isfh608_05
Figure 5. Diode Forward Voltage (typ.)
Figure 8. Output Characteristics
I
= 1.0 mA, V = f (T )
F A
F
I
= f (T )
A
F
isfh608_06
isfh608_09
Figure 6. Diode Forward Voltage (typ.)
Figure 9. Permissible Forward Current Diode
P
= f (T )
A
tot
I
= f
CE
(V , I
)
B
CE
isfh608_07
isfh608_10
Figure 7. Output Characteristics
Figure 10. Permissible Power Dissipation for Transistor and Diode
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
5
SFH608
Vishay Semiconductors
f=1.0 MHz,C =f (V
CE
)
CE
C
=f (V ),
CB
CB
=f (V
I
I
= 0, V
= 10 V,
)
A
F
CE
= f (T
C
)
EB
EB
CEO
isfh608_12
isfh608_11
Figure 11. Transistor Capacitance
Figure 12. Collector-Emitter Leakage Current vs.Temp.
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
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6
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
7
SFH608
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83664
Rev. 1.4, 26-Oct-04
相关型号：
SFH608-3-X007
Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS
VISHAY
SFH608-4
Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS
VISHAY
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