SFH6135 [VISHAY]
High Speed Optocoupler, 1 MBd, Transistor Output; 高速光耦， 1 MBd的，晶体管输出
| 型号： | SFH6135 |
| 厂家： | 
VISHAY |
| 描述： | High Speed Optocoupler, 1 MBd, Transistor Output |
| 文件： | 总8页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH6135/ SFH6136
VISHAY
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Transistor Output
Features
• Isolation Test Voltage: 5300 VRMS
• TTL Compatible
• High Bit Rates: 1.0 Mbit/s
• High Common-mode Interference Immunity
NC
A
1
2
3
4
8
7
6
5
C (V )
CC
• Bandwidth 2.0 MHz
B (V
)
B
• Open-collector Output
• External Base Wiring Possible
C
C (V )
O
NC
E (GND)
i179081
Agency Approvals
• UL - File No. E52744 System Code H or J
• CSA 93751
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages.
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
Order Information
The SFH6135 and SFH6136 optocouplers feature a
high signal transmission rate and a high isolation
resistance. They have a GaAIAs infrared emitting
diode, optically coupled with an integrated photo
detector which consists of a photo diode and a high-
speed transistor in a DIP-8 plastic package.
Part
Remarks
CTR ≥ 7.0 %, DIP-8
CTR ≥ 19 %, DIP-8
SFH6135
SFH6136
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
3.0
Unit
V
Reverse voltage
V
R
Forward current
I
25
50
mA
mA
A
F
Peak forward current
t = 1.0 ms, duty cycle 50 %
I
FM
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s
Thermal resistance
I
1.0
700
45
FSM
R
K/W
mW
thja
Power dissipation
P
diss
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
1
SFH6135/ SFH6136
Vishay Semiconductors
VISHAY
Output
Parameter
Test condition
Symbol
Value
Unit
V
Supply voltage
V
- 0.5 to 30
S
Output voltage
V
- 0.5 to 25
5.0
V
O
Emitter-base voltage
Output current
V
V
EBO
I
I
8.0
mA
mA
mA
K/W
mW
O
O
Maximum output current
Base current
16
I
5.0
B
Thermal resistance
Power dissipation
R
300
thja
diss
T
= 70 °C
P
100
amb
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage
V
V
RMS
ISO
Pollution degree (DIN VDE
0110)
2
Creepage
Clearance
≥ 7.0
≥ 7.0
175
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
amb
≥ 10
Storage temperature range
Ambient temperature range
Soldering temperature
T
- 55 to + 125
- 55 to + 100
260
°C
°C
°C
stg
T
amb
max. ≤10 s, dip soldering
≥ 0.5 mm distance from case
bottom
T
sld
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
= 16 mA
Symbol
Min
3.0
Typ.
1.6
Max
1.9
Unit
V
Forward voltage
I
I
V
F
F
Breakdown voltage
Reverse current
Capacitance
= 10 µA
V
V
µA
R
BR
V
V
= 3.0 V
I
0.5
125
1.7
10
R
R
= 0 V, f = 1.0 MHz
C
pF
R
O
Temperature coefficient of
forward voltage
I
= 16 mA
∆V /∆T
amb
mV/°C
F
F
www.vishay.com
2
Document Number 83668
Rev. 1.4, 27-Apr-04
SFH6135/ SFH6136
VISHAY
Vishay Semiconductors
Output
Parameter
Test condition
Part
Symbol
Min
Typ.
150
Max
Unit
Logic low supply current
Logic high supply current
Output voltage, output low
I = 16 mA, V open, V = 15 V
I
µA
F
O
CC
CCL
I = 0 mA, V open, V = 15 V
I
0.01
0.1
1.0
0.4
µA
F
O
CC
CCH
I = 16 mA, V = 4.5 V,
SFH6135
SFH6136
V
V
F
CC
OL
I
= 1.1 mA
O
I = 16 mA, V = 4.5 V,
V
0.1
0.4
V
F
CC
OL
I
I
= 2.4 mA
O
Output current, output high
= 0 mA, V = V = 5.5 V
I
I
3.0
500
1.0
nA
F
O
CC
OH
OH
I = 0 mA, V = V = 15 V
0.01
µA
F
O
CC
Coupler
Parameter
Test condition
f = 1.0 MHz
Symbol
Min
Typ.
0.6
Max
Unit
pF
Capacitance (input-output)
C
IO
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
7
Typ.
16
Max
Unit
%
Current Transfer Ratio
I = 16 mA, V = 0.4 V,
SFH6135
F
O
V
= 4.5 V
CC
SFH6136
SFH6135
CTR
CTR
19
5
35
%
%
I = 16 mA, V = 0.5 V,
F
O
V
= 4.5 V
CC
SFH6136
CTR
15
%
Pulse generator
I
F
ZO = 50 Ω
,t = 5 ns
f
t
r
duty cycle 10%
t≤100 µs
t
5 V
8
7
6
5
1
2
3
4
V
O
I
F
5 V
R
L
I
Monitor
1.5 V
F
V
O
V
OL
t
C
100 ıΩ
t
L
t
PHL
PLH
15 pF
isfh6135_01
Fig. 1 Schematics
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
3
SFH6135/ SFH6136
Vishay Semiconductors
VISHAY
Switching Characteristics
Delay Time
Parameter
Test condition
= 16 mA, V = 5.0 V,
Part
Symbol
Min
Typ.
0.3
Max
1.5
Unit
High-low
Low-high
I
SFH6135
t
µs
F
CC
PHL
R = 4.1 kΩ
L
I
= 16 mA, V = 5.0 V,
SFH6136
SFH6135
SFH6136
t
0.2
0.3
0.2
0.8
1.5
0.8
µs
µs
µs
F
CC
PHL
R = 1.9 kΩ
L
I
= 16 mA, V = 5.0 V,
t
F
CC
PLH
R = 4.1 kΩ
L
I
= 16 mA, V = 5.0 V,
t
F
CC
PLH
R = 1.9 kΩ
L
V
CM
10 V
90%
10%
90%
I
5 V
8
7
6
5
F
1
2
3
4
10%
0 V
R
L
t
A
t
t
f
r
B
V
V
O
V
O
V
FF
5 V
A: I = 0 mA
F
t
Pulse generator
O
+V
CM
ZO = 50 Ω
t = 8 ns
t
,
f
B: I = 16 mA
F
r
V
OL
isfh6135_02
t
Fig. 2 Common-Mode Interference Immunity
Common Mode Transient Immunity
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
High
V
= 10 V , V = 5.0 V,
SFH6135
SFH6136
SFH6135
SFH6136
CM
1000
V/µs
CM
P-P CC
H
I
= 0 mA, R = 4.1 kΩ
F
L
V
= 10 V , V = 5.0 V,
CM
1000
1000
1000
V/µs
V/µs
V/µs
CM
P-P CC
H
I
= 0 mA, R = 1.9 kΩ
F
L
Low
V
= 10 V , V = 5.0 V,
CM
CM
P-P CC
L
I
= 0 mA, R = 4.1 kΩ
F
L
V
= 10 V , V = 5.0 V,
CM
CM
P-P CC
L
I
= 0 mA, R = 1.9 kΩ
F
L
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4
Document Number 83668
Rev. 1.4, 27-Apr-04
SFH6135/ SFH6136
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
20
15
25
20
15
10
5
( V
CC
= 5.0 V)
IF=40mA
IF=35mA
IF=30mA
IF=25mA
IF=20mA
75 °C
10
IF=15mA
IF=10mA
25 °C
0 °C
5
0
IF=5mA
0
1.3
1.4
1.5
- LED forward Voltage
1.6
1.7
0
5
10
15
20
25
V
Output Voltage, Vo (V)
F
isfh6135_06
isfh6135_03
Fig. 3 LED Forward Current vs.Forward Voltage
Fig. 6 Output Current vs. Output Voltage
8
30
20
@ V = 0.4 V, V
= 5.0
CC
O
IF = 20mA
IF = 16mA
7
6
5
4
3
2
1
0
IF = 10mA
IF = 2mA
10
0
IF = 1mA
0
20
40
60
80
100
-60 -40
-20
0
20
40
60
80 100
Ambient Temperature in °C
Temperature, Ta (°C)
isfh6135_07
isfh6135_04
Fig. 4 Permissible Forward LED Current vs. Temperature
Fig. 7 Output Current vs. Temperature
900
120
SFH6136 @ V
= 5.0 V
= 16 mA, R = 1.9 kΩ
CC
800
700
600
500
400
300
200
100
0
I
100
F
L
TpLH @ 3 V
Detector
80
TpLH @ 1.5 V
60
40
TpHL @ 1.5 V
TpHL @ 3 V
Emitter
20
0
0
20
40
60
80
100
-60 -40
-20
0
20
40
60
80 100
Temperature, Ta (°C)
Ambient Temperature in °C
isfh6135_08
isfh6135_05
Fig. 5 Permissible Power Dissipation vs. Temperature
Fig. 8 Propagation Delay vs. Temperature-SFH6136
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
5
SFH6135/ SFH6136
Vishay Semiconductors
VISHAY
1400
SFH1635 @ V
= 5.0 V,
CC
1200
1000
800
600
400
200
0
I
= 16 mA, R = 4.1 kΩ
F
L
TpLH
TpHL
-60 -40
-20
100
0
20
40
60
80
Temperature, Ta (°C)
isfh6135_09
Fig. 9 Propagation Delay vs. Temperature-SFH6135
100
10
V
= V = 15 V
O
CC
V
= V = 5 V
O
1
0.1
CC
0.01
0.001
0
-60 -40
-20
20
40
100
60
80
Temperature, T (°C)
A
isfh6135_10
Fig. 10Logic High Output Current vs.Temperature
0.6
(V
= 5.0 V, R = 100 Ω)
L
CC
0.5
0.4
0.3
0.2
0.1
0
10
15
20
25
0
5
I
/ mA
F
isfh6135_11
Fig. 11Small Signal Current Transfer Ratio vs. Quiescent Input
Current
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6
Document Number 83668
Rev. 1.4, 27-Apr-04
SFH6135/ SFH6136
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Document Number 83668
Rev. 1.4, 27-Apr-04
www.vishay.com
7
SFH6135/ SFH6136
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83668
Rev. 1.4, 27-Apr-04
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