SFH615A-34-X001 [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4;
| 型号： | SFH615A-34-X001 |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 输出元件 光电 |
| 文件： | 总4页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH615A
5.3 kV TRIOS Optocoupler
High Reliability
FEATURES
Dimensions in inches (mm)
2
• Variety of Current Transfer Ratios at I =10 mA
F
– SFH615A-1, 40–80%
– SFH615A-2, 63–125%
– SFH615A-3, 100–200%
– SFH615A-4, 160–320%
– SFH615A-12, 40–125%
– SFH615A-23, 63–200%
– SFH615A-34, 100–320%
– SFH615A-13, 40–200%
– SFH615A-24, 63–320%
– SFH615A-14, 40–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode
Collector
Emitter
1
2
4
3
Cathode
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.030 (.76)
.045 (1.14)
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
• Withstand Test Voltage, 5300 V
RMS
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
=70 V
10°
CEO
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.050 (1.27)
0.100 (2.54)
• Low Coupling Capacitance
Maximum Ratings
Emitter
Reverse Voltage ...............................................................................6.0 V
DC Forward Current ...................................................................... 60 mA
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
Surge Forward Current (t ≤10 µs)....................................................2.5 A
Total Power Dissipation.............................................................. 100 mW
Detector
• Underwriters Lab File #52744
P
VE
D
•
VDE 0884 Available with Option 1
Collector-Emitter Voltage...................................................................70 V
Emitter-Collector Voltage..................................................................7.0 V
Collector Current ........................................................................... 50 mA
DESCRIPTION
The SFH615A features a large variety of transfer ratio,
low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plas-
tic DIP-4 package.
Collector Current (t ≤1.0 ms) ...................................................... 100 mA
P
Total Power Dissipation.............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
part 2, Nov. 74, t=1.0 s....................................................... 5300 V
RMS
Creepage....................................................................................≥7.0 mm
Clearance....................................................................................≥7.0 mm
Insulation Thickness between Emitter and Detector .................≥0.4 mm
Comparative Tracking Index
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
per DIN IEC 112/VDE0 303, part 1................................................≥175
Isolation Resistance
12
V =500 V, T =25°C ................................................................≥10
Ω
Ω
IO
A
11
operation voltage of 400 V
or DC.
RMS
V =500 V, T =100°C ..............................................................≥10
IO
A
Storage Temperature Range..............................................–55 to +150°C
Ambient Temperature Range ............................................–55 to +100°C
Junction Temperature..................................................................... 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Specifications subject to change.
Distance to Seating Plane ≥1.5 mm) .......................................... 260°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
February 23, 2000-14
Characteristics (T =25°C)
A
Sym.
Value
Unit Condition
Parameter
Emitter (IR GaAs)
Forward Voltage
Reverse Current
Capacitance
V
1.25(≤1.65)
0.01(≤10)
13
V
I =60 mA
F
F
I
µA
pF
V =6.0 V
R
R
C
V =0 V,
0
R
f=1.0 MHz
Thermal Resistance
Detector (Si Phototransistor)
Capacitance
R
750
K/W
—
thJA
C
5.2
pF
V
=5.0 V,
CE
CE
f=1.0 MHz
Thermal Resistance
R
V
500
K/W
—
thJA
Package
Collector-Emitter
Saturation Voltage
0.25(≤0.4)
V
I =10 mA,
F
CEsat
I =2.5 mA
C
Coupling Capacitance
C
0.4
pF
—
C
Current Transfer Ratio (I /I at V =5.0 V) and Collector-emitter Leakage Current
C
F
CE
Parameter
-1
-2
63–125 100–200 160–320 40–125 63–200 100–320 40–200 63–320 40–320
I /I (I =1.0 mA) 30(>13) 45(>22) 70(>34) 90(>56) 30(>13) 45(>22) 70(>34) 30(>13) 45(>22) 30(>13)
-3
-4
-12
-23
-34
-13
-24
-14
Unit
I /I (I =10 mA) 40–80
%
C
F
F
C
F
F
Collector-Emitter 2.0(≤50) 2.0(≤50) 5.0(≤100) 5.0(≤100) 2.0(≤50) 5.0(≤100) 5.0(≤100) 5.0(≤100) 5.0(≤100) 5.0(≤100) nA
Leakage Current,
I
V
=10 V
CEO, CE
Figure 1. Switching Times (Typical) Linear Operation
Table 1. I =10 mA, V =5.0 V, T =25°C, without Saturation
F
CC
A
(without saturation)
Parameter
Sym.
Value
75
Unit
Ω
Load Resistance
Turn-on Time
Rise Time
R
L
on
r
IF
RL=75 Ω
t
t
t
t
3.0
µs
VCC=5 V
2.0
IC
Turn-off Time
Fall Time
2.3
off
f
2.0
47 Ω
Cut-off Frequency
F
250
kHz
CO
Figure 2. Switching Operation (with saturation)
Table 2. V =5.0 V, T =25°C, with Saturation
CC
A
Parameter
Sym. Switching Time by Dash Numbers Unit
-1, -12, -13 -2, -3, -23 -4, -34, -24
IF
1 kΩ
I =20 mA
I =10 mA
I =5.0 mA
F
F
F
VCC=5 V
Load
Resistance
R
1000
1000
1000
Ω
L
Turn-on Time
Rise Time
t
t
t
t
3.0
2.0
18
4.2
3.0
23
6.0
4.6
25
µs
on
47 Ω
r
Turn-off Time
Fall Time
off
f
11
14
15
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH615A
2
February 23, 2000-14
Figure 3. Current Transfer Ratio (typical) vs.Temperature
Figure 6.Transistor Capacitance (typical) vs. Collector-emit-
I =10 mA, V =5.0 V
ter Voltage T =25°C, f=1.0 MHz
F
CE
A
3
10
20
pF
%
5
4
IC
IF
15
C
3
2
2
10
5
10
1
CCE
5
1
10
0
–25
0
25
50
°C
75
–2
–1
–0
1
2
10
10
10
10
V
10
TA
V
e
Figure 4. Output Characteristics (typical) Collector Current
Figure 7. Permissible Pulse Handling Capability. Forward
vs. Collector-emitter Voltage T =25°C
Current vs. Pulse Width Pulse cycle D=parameter, T =25°C
A
A
4
10
30
D=
0
mA
tp
0.005
0.01
0.02
0.05
0.1
5
IF=14 mA
tp
T
mA
IF
D=
I
F
I
C
12 mA
10 mA
T
3
10
20
10
0
5
8.0 mA
6.0 mA
2
10
5
0.2
0.5
DC
4.0 mA
2.0 mA
1.0 mA
10
1
10
–5
–4
–3
–2
–1
0
1
10
10
10
10
10
10
s 10
0
5
V
15
V
tp
CE
Figure 5. Diode Forward Voltage (typical) vs. Forward
Current
Figure 8. Permissible Power Dissipation vs. Ambient
Temperature
120
mA
1.2
V
25°
50°
75°
V
90
F
1.1
1.0
0.9
I
F
60
30
0
–1
0
1
2
0
25
50
75
°C
100
10
10
10
mA
10
T
I
A
F
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
SFH615A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
3
February 23, 2000-14
Figure 9. Permissible Diode Forward Current vs. Ambient
Temperature
200
mW
150
Transistor
P
tot
100
Diode
50
0
0
25
50
75
°C
100
T
A
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH615A
4
February 23, 2000-14
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