SFH615AB-X001 [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4;
| 型号： | SFH615AB-X001 |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 输出元件 光电 |
| 文件： | 总3页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
5.3 kV TRIOS“ Optocoupler
High Reliability
FEATURES
Dimensions in inches (mm)
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
2
1
pin one ID
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
.255 (6.48)
.268 (6.81)
Anode
Collector
Emitter
1
2
4
3
– AY: 50–150%
Cathode
– AB: 80–260%
3
4
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
• Isolation Test Voltage, 5300 V
.030 (.76)
.045 (1.14)
RMS
• High Collector-emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
=70 V
CEO
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
10°
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.050 (1.27)
0.100 (2.54)
Maximum Ratings
Emitter
• Underwriters Lab File #52744
VE
D
•
VDE 0884 Available with Option 1
Reverse Voltage................................................................................6.0 V
DC Forward Current........................................................................60 mA
Surge Forward Current (t ≤10 µs) ....................................................2.5 A
DESCRIPTION
P
Total Power Dissipation................................................................100 mW
Detector
Collector-Emitter Voltage....................................................................70 V
Emitter-Collector Voltage...................................................................7.0 V
Collector Current.............................................................................50 mA
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
Collector Current (t ≤1.0 ms)........................................................100 mA
P
Total Power Dissipation................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
part 2, Nov. 74......................................................................5300 V
RMS
Creepage................................................................................... ≥7.0 mm
Clearance................................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector.................. ≥0.4 mm
Comparative Tracking Index
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
or DC.
RMS
per DIN IEC 112/VDE0 303, part 1............................................... ≥175
Isolation Resistance
12
V =500 V, T =25°C ................................................................ ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C .............................................................. ≥10
IO
A
Storage Temperature Range..............................................–55 to +150°C
Ambient Temperature Range.............................................–55 to +100°C
Junction Temperature .....................................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)...........................................260°C
Document Number: 83672
Revision 17-August-01
www.vishay.com
2–239
Table 1. Characteristics (T =25°C)
A
Symbol
Value
Unit
Condition
Parameter
Emitter (IR GaAs)
Forward Voltage
V
1.25(≤1.65)
0.01(≤10)
13
V
I =60 mA
F
F
Reverse Current
I
µA
pF
K/W
V =6.0 V
R
R
Capacitance
C
V =0 V, f=1.0 MHz
0
R
Thermal Resistance
Detector (Si Phototransistor)
Capacitance
R
750
—
thJA
C
5.2
pF
V
=5 V, f=1.0 MHz
CE
CE
Thermal Resistance
Package
R
500
K/W
—
thJA
Collector-Emitter Saturation Voltage
Coupling Capacitance
V
0.25(≤0.4)
V
I =10 mA, I =2.5 mA
CEsat
F
C
C
0.4
pF
—
C
Table 2. Current Transfer Ratio (I /I at V =5.0 V) and Collector-emitter Leakage Current
C
F
CE
Unit
%
AA
AGB
AGR
ABM
ABL
AY
AB
Parameter
I / I (I =5.0 mA)
50–600
100–600
100–300
10(≤100)
200–400
10(≤100)
200–600
10(≤100)
50–150
80–260
10(≤100)
C
F
F
Collector-Emitter Leakage
Current, I =10 V
10(≤100)
10(≤100)
10(≤100)
nA
V
CEO, CEO
Switching Operation (with saturation)
IF
1 kΩ
Parameter
Symbol Value
Unit
µs
Condition
I =5.0 mA
VCC=5 V
Turn-on Time
Turn-off Time
t
t
2.0
25
on
off
F
µs
47 Ω
Document Number: 83672
Revision 17-August-01
www.vishay.com
2–240
Figure 6. Diode Forward Voltage
(typical) vs. Forward Current
Figure 4. Output Characteristics (typi-
cal). Collector Current vs.
Figure 1. Current Transfer Ratio
(typical) vs.Temperature I =10 mA,
F
Collector-emitter Voltage T =25°C
V
=0.5 V
A
CE
Figure 7. Permissible Power Dissipation
vs. Ambient Temperature
Figure 2.Transistor Capacitance
(typical) vs. Collector-emitter Voltage
Figure 5. Permissible Pulse Handling
Capability. Forward Current vs. Pulse-
T =25°C, f=1.0 MHz
width Pulse cycle D=parameter, T =25°C
A
A
20
pF
15
C
10
5
CCE
0
10-1
10-0
101
102
10-2
V
V
e
Figure 3. Permissible Diode Forward
Current vs. Ambient Temperature
Document Number: 83672
Revision 17-August-01
www.vishay.com
2–241
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