SFH6186-4 [VISHAY]
Optocoupler, Phototransistor Output, Low Input Current; 光电耦合器，光电晶体管输出，低输入电流
| 型号： | SFH6186-4 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, Low Input Current |
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current
Features
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage, V CEO = 55 V
1
• Isolation Test Voltage, 5300 V RMS
• Low Coupling Capacitance
A
C
C
E
4
3
1
2
1
• End-Stackable, 0.100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
• Lead-free component
i179061
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 VRMS or DC.
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
Order Information
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Part
Remarks
SFH618A-2
CTR 63 - 125 %, DIP-4
SFH618A-3
CTR 100 - 200 %, DIP-4
Applications
Telecom
SFH618A-4
CTR 160 - 320 %, DIP-4
SFH618A-5
CTR 250 - 500 %, DIP-4
Industrial Controls
Battery Powered Equipment
Office Machines
SFH6186-2
CTR 63 - 125 %, SMD-4
SFH6186-3
CTR 100 - 200 %, SMD-4
SFH6186-4
CTR 160 - 320 %, SMD-4
SFH6186-5
CTR 250 - 500 %, SMD-4
Description
SFH618A-3X006
SFH618A-3X007
SFH618A-4X006
SFH618A-5X006
SFH618A-5X007
CTR 100 - 200 %, DIP-4 400 mil (option 6)
CTR 100 - 200 %, SMD-4 (option 7)
CTR 160 - 320 %, DIP-4 400 mil (option 6)
CTR 250 - 500 %, DIP-4 400 mil (option 6)
CTR 250 - 500 %, SMD-4 (option 7)
The SFH618A (DIP) and SFH6186 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou-
pled to silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 or SMD package.
For additional information on the available options refer to
Option Information.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
Document Number 83673
Rev. 1.5, 20-Apr-04
www.vishay.com
1
SFH618A / SFH6186
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
Power dissipation
P
70
mW
diss
Output
Parameter
Symbol
Value
55
Unit
V
Collector-emitter voltage
Emitter-collector voltage
Collector current
V
CE
EC
V
7.0
50
V
I
mA
mA
mW
C
t
≤ 1.0 ms
I
100
150
p
C
Power dissipation
P
diss
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage between
emitter and detector, refer to
Climate DIN 40046, part2,
Nov.74
V
V
RMS
ISO
Creepage distance
Clearance
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
≥ 10
Storage temperature range
Ambient temperature range
Junction temperature
T
- 55 to +150
- 55 to +100
100
°C
°C
°C
°C
stg
T
amb
T
j
Soldering temperature
max. 10 s. Dip Soldering
distance to seating plane
≥ 1.5 mm
T
260
sld
www.vishay.com
2
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
200
150
100
50
Phototransistor
Diode
25
0
0
50
75
100
125
150
18485
T
– Ambient Temperature ( qC )
amb
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
1.1
Max
1.5
Unit
V
Forward voltage
I = 5.0 mA
V
I
F
F
Reverse current
Capacitance
V
= 6.0 V
.01
25
10
µA
pF
R
R
V
= 0 V, f = 1.0 MHz
C
R
O
Thermal resistance
R
1070
K/W
thja
Output
Parameter
Test condition
Symbol
Min
Typ.
10
Max
200
Unit
nA
Collector-emitter leakage
current
V
V
= 10 V
I
CE
CE
CEO
Collector-emitter capacitance
Thermal resistance
= 5.0 V, f = 1.0 MHz
C
7
pF
CE
R
500
K/W
thja
Coupler
Parameter
Test condition
Part
Symbol
Min
Typ.
0.25
Max
0.4
Unit
Collector-emitter saturation
voltage
I
I
I
I
= 0.32 mA, I = 1.0 mA
SFH618A-2
SFH6186-2
V
V
V
V
V
C
C
C
C
F
CEsat
CEsat
CEsat
CEsat
= 0.5 mA, I = 1.0 mA
SFH618A-3
SFH6186-3
0.25
0.25
0.25
0.25
0.4
0.4
0.4
V
F
= 1.25 mA, I = 1.0 mA
SFH618A-4
SFH6186-4
V
F
= 0.8 mA, I = 1.0 mA
SFH618A-5
SFH6186-5
V
F
Coupling capacitance
C
pF
C
Document Number 83673
Rev. 1.5, 20-Apr-04
www.vishay.com
3
SFH618A / SFH6186
Vishay Semiconductors
VISHAY
Current Transfer Ratio
Parameter
Test condition
= 1.0 mA, V = 0.5 V
Part
Symbol
CTR
Min
63
Typ.
75
Max
Unit
%
I /I
I
I
I
I
I
I
I
I
SFH618A-2
SFH6186-2
125
200
320
500
C
F
F
F
F
F
F
F
F
F
CE
= 0.5 mA, V = 1.5 V
SFH618A-2
SFH6186-2
CTR
CTR
CTR
CTR
CTR
CTR
CTR
32
100
50
%
%
%
%
%
%
%
CE
= 1.0 mA, V = 0.5 V
SFH618A-3
SFH6186-3
CE
= 0.5 mA, V = 1.5 V
SFH618A-3
SFH6186-3
120
200
300
CE
= 1.0 mA, V = 0.5 V
SFH618A-4
SFH6186-4
160
80
CE
= 0.5 mA, V = 1.5 V
SFH618A-4
SFH6186-4
CE
= 1.0 mA, V = 0.5 V
SFH618A-5
SFH6186-5
250
125
CE
= 0.5 mA, V = 1.5 V
SFH618A-5
SFH6186-5
CE
Switching Characteristics
Typical
Parameter
Test condition
= 5.0 V, I = 2.0 mA,
Symbol
Min
Typ.
Max
Unit
Turn-on time
V
t
6.0
3.5
5.5
5.0
µs
µs
µs
µs
CC
C
on
R = 100 Ω
L
Rise time
V
= 5.0 V, I = 2.0 mA,
t
CC
C
r
R = 100 Ω
L
Turn-off time
Fall time
V
= 5.0 V, I = 2.0 mA,
t
CC
C
off
R = 100 Ω
L
V
= 5.0 V, I = 2.0 mA,
t
CC
C
f
R = 100 Ω
L
VCC = 5 V
Input Pulse
R
INPUT
L
V
OUT
10%
90%
Output Pulse
t
t
t
r
f
t
on
off
isfh618a_10
isfh618a_12
Figure 2. Test Circuit
Figure 3. Test Circuit and Waveforms
www.vishay.com
4
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
V
= 0.5 V, C
= f (T )
TR A
CE
I
= 1.0 mA, V = f (T )
F A
F
isfh618a_01
isfh618a_04
Figure 4. Current Transfer Ratio (typ.)
Figure 7. Diode Forward Voltage (typ.)
T
C
= 25°C, f = 1.0 MHz,
A
= f (V
)
CE
EE
isfh618a_02
isfh618a_05
Figure 5. Current Transfer Ratio (typ.)
Figure 8. Transistor Capacitance
T
C
= 25°C,
= f
A
E
T
= 25°C, V = f (I )
F F
A
(V , I
CE
)
F
isfh618a_03
isfh618a_06
Figure 6. Diode Forward Voltage (typ.)
Figure 9. Output Characteristics
Document Number 83673
Rev. 1.5, 20-Apr-04
www.vishay.com
5
SFH618A / SFH6186
Vishay Semiconductors
VISHAY
I
= f (T )
A
F
T
= 25°C, I = 1.0 mA,
F
A
V
t
= 5.0 V, t , t ,
ON R
CC
, t , = f (R )
L
OFF
F
isfh618a_09
isfh618a_07
Figure 10. Permissible Forward Current Diode
Figure 11. Switching times (typ.)
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
typ.
.110 (2.79)
.130 (3.30)
.020 (.508 )
.035 (.89)
.050 (1.27)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
i178027
.100 (2.54)
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6
Document Number 83673
Rev. 1.5, 20-Apr-04
SFH618A / SFH6186
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
SMD
.030 (.76)
pin one ID
R .010 (.25)
.100 (2.54)
.070 (1.78)
.255 (6.48)
.268 (6.81)
.060 (1.52)
.315 (8.00) min
.435 (11.05)
3
4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83)
.296 (7.52)
.312 (7.90)
.030 (.76)
.045 (1.14)
.031 (.79)
typ.
10°
.010 (.25)
typ.
.130 (3.30)
.150 (3.81)
ISO Method A
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
4° typ.
.0098 (.249)
.035 (.102)
3°–7°
1.00 (2.54)typ.
Lead
.050 (1.27)
typ.
coplanarity
.004 max.
i178029
Option 7
Option 6
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.400 (10.16)
.430 (10.92)
.406 (10.3)
MAX.
18487
Document Number 83673
Rev. 1.5, 20-Apr-04
www.vishay.com
7
SFH618A / SFH6186
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83673
Rev. 1.5, 20-Apr-04
相关型号：
SFH6186-4X001
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, SMD, 4 PIN
VISHAY
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