SFH618A-3 [VISHAY]
Phototransistor, 5.3 kV TRIOS Low Current Input Optocoupler; 光电晶体管， 5.3千伏三重奏低输入电流光耦
| 型号： | SFH618A-3 |
| 厂家： | 
VISHAY |
| 描述： | Phototransistor, 5.3 kV TRIOS Low Current Input Optocoupler |
| 文件： | 总4页 (文件大小：471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH618A/628A
Phototransistor, 5.3 kV TRIOS
Low Current Input
Optocoupler
FEATURES
• Very High CTR at I =1.0 mA, V =0.5 V
Dimensions in Inches (mm)
F
CE
2
– SFH618A-2, 63–125%
1
SFH618A
SFH628A
pin one ID
– SFH618A-3, 100–200%
– SFH618A-4, 160–320%
– SFH618A-5, 250–500%
– SFH628A-2, 63–200%
– SFH628A-3, 100–320%
– SFH628A-4, 160–500%
Anode
Collector
Emitter
4
3
1
2
.255 (6.48)
.268 (6.81)
Cathode
Anode/
Collector
Emitter
4
3
1
2
Cathode
3
4
• Specified Minimum CTR at I =0.5 mA
Cathode/
Anode
F
.179 (4.55)
.190 (4.83)
– SFH618A, V =1.5 V: ≥32% (typical 120%)
CE
– SFH628A, V =1.5 V: ≥50% (typical 160%)
CE
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage, V
• Isolation Test Voltage, 5300 V
• Low Coupling Capacitance
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• End-Stackable, 0.100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
=55 V
CEO
RMS
10°
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.050 (1.27)
0.100 (2.54)
• Underwriters Lab File #52744
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)............................................................. 6.0 V
DC Forward Current (SFH628A) .................................................. 50 mA
Surge Forward Current (t ≤10 µs) (SFH628A) ............................... 2.5 A
Total Power Dissipation ................................................................. 70 mW
Detector
Collector-emitter Voltage ................................................................... 55 V
Emitter-collector Voltage................................................................... 7.0 V
Collector Current ............................................................................ 50 mA
VE
D
•
VDE 0884 Available with Option 1
• SMD Option — See SFH6186/6286 Data Sheet
APPLICATIONS
• Telecom
• Industrial Controls
• Battery Powered Equipment
• Office Machines
p
Collector Current (t ≤1.0 ms) ....................................................... 100 mA
DESCRIPTION
p
Total Power Dissipation ............................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
The SFH618A/628A feature a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sili-
con planar phototransistor detector, and is
part 2, Nov. 74 ..................................................................... 5300 V
RMS
Creepage Distance .................................................................... ≥7.0 mm
Clearance................................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector.................. ≥0.4 mm
Comparative Tracking Index
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
per DIN IEC 112/VDE0 303, part 1 ..................................................175
The couplers are end-stackable with 2.54 mm lead
spacing.
Isolation Resistance
12
V =500 V, T =25°C................................................................. ≥10
Ω
Ω
IO
A
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
11
V =500 V, T =100°C............................................................... ≥10
IO
A
Storage Temperature Range ............................................. –55 to +150°C
Ambient Temperature Range............................................. –55 to +100°C
Junction Temperature......................................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
to an operation voltage of 400 V
or DC.
RMS
Distance to Seating Plane ≥1.5 mm) ..........................................260°C
Document Number: 83673
Revision 17-August-01
www.vishay.com
2–242
Characteristics (T =25°C)
A
Description
Emitter
Symbol Min.
Typ.
Max.
Unit
Condition
Forward Voltage
Reverse Current
Capacitance
V
—
—
—
1.1
.01
1.5
10
—
V
I =5.0 mA
F
F
SFH618A
I
µA
pF
V =6.0 V
R
R
SFH618A
SFH628A
C
25
45
V =0 V, f=1.0 MHz
0
R
Thermal Resistance
Detector
R
—
1070
—
K/W
—
thJA
Collector-emitter Leakage Current
Capacitance
I
—
—
—
10
7
200
—
nA
V
=10 V
CE
CEO
C
pF
V
=5.0 V, f=1.0 MHz
CE
CE
Thermal Resistance
Package
R
500
—
K/W
—
thJA
Collector-emitter Saturation Voltage
SFH618A-2
SFH618A-3
SFH618A-4
SFH618A-5
SFH628A-2
SFH628A-3
SFH628A-4
—
V
—
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
—
0.4
0.4
0.4
0.4
0.4
0.4
0.4
—
V
V
I =0.32 mA, I =1.0 mA
C F
CEsat
CEsat
—
I =0.5 mA, I =1.0 mA
C F
—
I =0.8 mA, I =1.0 mA
C F
—
I =1.25 mA, I =1.0 mA
C F
Collector-emitter Saturation Voltage
V
—
I =0.5 mA, I = 1.0 mA
C F
—
I =0.8 mA, I = 1.0 mA
C F
—
I =1.25 mA, I = 1.0 mA
C
F
Coupling Capacitance
Coupling Transfer Ratio
C
—
pF
%
—
C
SFH618A-2
SFH618A-2
SFH618A-3
SFH618A-3
SFH618A-4
SFH618A-4
SFH618A-5
SFH618A-5
SFH628A-2
SFH628A-2
SFH628A-3
SFH628A-3
SFH628A-4
SFH628A-4
I /I
63
32
100
50
160
80
250
125
63
32
100
50
160
80
125
—
I =1.0 mA, V =0.5 V
F CE
C
F
F
F
F
F
F
F
75
I =0.5 mA, V =1.5 V
F CE
I /I
—
200
—
%
%
%
%
%
%
I =1.0 mA, V =0.5 V
F CE
C
120
—
I =0.5 mA, V =1.5 V
F CE
I /I
320
—
I =1.0 mA, V =0.5 V
F CE
C
200
—
I =0.5 mA, V =1.5 V
F CE
I /I
500
—
I =1.0 mA, V =0.5 V
F CE
C
300
—
I =0.5 mA, V =1.5 V
F CE
Coupling Transfer Ratio
I /I
200
—
I = 1.0 mA, V =0.5 V
F CE
C
100
—
I = 0.5 mA, V =1.5 V
F CE
I /I
320
—
I = 1.0 mA, V =0.5 V
F CE
C
160
—
I = 0.5 mA, V =1.5 V
F CE
I /I
500
—
I = 1.0 mA, V =0.5 V
F CE
C
250
I = 0.5 mA, V =1.5 V
F CE
Document Number: 83673
Revision 17-August-01
www.vishay.com
2–243
Figure 7. Permissible Forward Current
Figure 4. Diode Forward Voltage
Figure 1. Current Transfer Ratio (typ.)
=0.5 V, C =f(T )
Diode I =f(T )
I =1.0 mA, V =f(T )
V
F
A
F
F
A
CE
TR
A
Figure 5.Transistor Capacitance
T =25°C, f=1.0 MHz, C =f(V
Figure 8. Permissible Power
Figure 2. Current Transfer Ratio (typ.)
=1.5 V, C =f(T )
)
Dissipation P =f(T )
V
A
CE
CE
tot
A
CE
TR
A
Figure 6. Output Characteristics
Figure 9. Switching Times (typ.)
Figure 3. Diode Forward Voltage
T =25°C, I =1.0 mA, V =5.0 V
T =25°C, V =f(I )
T =25°C, C =f(V , I )
A
F
CC
A
F
F
A
E
CE
F
t
, t t , t =f(R )
on r, off f L
Document Number: 83673
Revision 17-August-01
www.vishay.com
2–244
Switching Times, typical
=5.0 V, I =2.0 mA, R =100 Ω, T =25°C
Figure 11. Test Circuit—SFH628A
V
CC
C
L
A
IF
RL
VCC
Turn-on Time
Rise Time
t
t
t
t
6.0
3.5
5.5
5.0
µs
on
r
IC
Turn-off Time
Fall Time
off
f
47Ω
Figure 10. Test Circuit—SFH618A
CC = 5 V
Figure 12.Test Circuit and Waveforms
V
Input Pulse
RL
Input
VOUT
10%
90%
Output Pulse
t
t
r
f
t
t
off
on
Document Number: 83673
Revision 17-August-01
www.vishay.com
2–245
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