SFH619A [VISHAY]
Optocoupler, Photodarlington Output, High Gain, 300 V BV; 光电耦合器，光电复合输出，高增益， 300 V BV
| 型号： | SFH619A |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Photodarlington Output, High Gain, 300 V BV |
| 文件： | 总6页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH619A
Vishay Semiconductors
VISHAY
Optocoupler, Photodarlington Output, High Gain, 300 V BVCEO
Features
• High Collector-emitter Voltage (VCEO = 300 V)
A
C
1
2
4
3
C
E
• High Isolation Test Voltage, 5300 VRMS
• Standard Plastic DIP-4 Package
• Compatible with Toshiba TLP627
Agency Approvals
• UL - File No. E52744 System Code H or J
• BSI IEC60950 IEC60965
i179062
Description
Order Information
The SFH619A is optically coupled isolators with a
Gallium Arsenide infrared LED and a silicon photo-
darlington sensor. Switching can be achieved while
maintaining a high degree of isolation between driving
and load circuits. These optocouplers can be used to
replace reed and mercury relays with advantages of
long life, high speed switching and elimination of
magnetic fields.
Part
Remarks
SFH619A
CTR > 1000 %, DIP-4
SFH619A-X007
SFH619A-X009
CTR > 1000 %, SMD-4 (option 7)
CTR > 1000 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Peak reverse voltage
V
RM
Forward continuous current
I
60
mA
F
Derate linearly from 25 °C
Power dissipation
1.33
100
mW/°C
mW
P
diss
Output
Parameter
Test condition
Symbol
Value
300
Unit
V
Collector-emitter breakdown
voltage
BV
BV
I
CEO
ECO
C
Emitter-collector breakdown
voltage
0.3
V
Collector (load) current
125
mA
Derate linearly from 25 °C
Power dissipation
2.00
150
mW/°C
mW
P
diss
Document Number 83674
Rev. 1.3, 20-Apr-04
www.vishay.com
1
SFH619A
Vishay Semiconductors
VISHAY
Coupler
Parameter
Test condition
Symbol
Value
3.33
250
Unit
mW/°C
mW
Derate linearly from 25 °C
Total power dissipation
P
tot
Isolation test voltage (between t = 1 s
emitter and detector, standard
climate: 23 °C/50 % RH, DIN
50014)
V
5300
V
RMS
ISO
Creepage
Clearance
≥ 7.0
≥ 7.0
mm
mm
Ω
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
Ω
amb
≥ 10
Storage temperature
Operating temperature
Soldering temperature
T
- 55 to + 150
- 55 to + 100
260
°C
°C
°C
stg
T
amb
max. 10 s, DIP soldering:
distance to seating plane
≥ 1.5 mm
T
sld
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
= 10 mA
Symbol
Min
Typ.
1.2
Max
1.5
Unit
V
Forward voltage
I
V
I
F
F
Reverse current
Capacitance
V
V
= 6.0 V
= 0 V
0.02
14
10
µA
R
R
R
C
pF
O
Output
Parameter
Test condition
Symbol
Min
300
Typ.
Max
Unit
V
Collector-emitter breakdown
voltage
I
= 100 µA
BV
CE
EC
CEO
Emitter-collector breakdown
voltage
I
= 100 µA
BV
0.3
V
ECO
Collector-emitter dark current
V
V
V
= 200 V, T = 25 °C
I
I
10
39
200
20
nA
nA
pF
CE
CE
CE
A
CEO
CEO
= 200 V, T = 100 °C
A
Collector-emitter capacitance
= 0 V, f = 1.0 MHz
C
CE
Coupler
Parameter
Test condition
Symbol
Min
0.3
Typ.
0.6
Max
1.0
Unit
V
Collector-emitter saturation
voltage
I
= 1.0 mA, I = 10 mA
V
F
C
CEsat
V
1.2
V
CEsat
Coupling capacitance
V
= 0 V, f = 1.0 MHz
C
pF
I-O
C
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2
Document Number 83674
Rev. 1.3, 20-Apr-04
SFH619A
Vishay Semiconductors
VISHAY
Current Transfer Ratio
Parameter
Test condition
Symbol
CTR
Min
Typ.
Max
Unit
%
Current Transfer Ratio
I = 1.0 mA, V = 1.0 V
1000
F
CE
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
3.5
Max
Unit
Rise time
V
V
V
V
V
V
V
V
= 10 V, I = 10 mA, R = 100 Ω
t
µs
CC
CC
CC
CC
CC
CC
CC
CC
C
L
r
= 10 V, I = 16 mA, R = 180 Ω
t
1.0
14.5
20.5
4.5
µs
µs
µs
µs
µs
µs
µs
F
L
r
Fall time
= 10 V, I = 10 mA, R = 100 Ω
t
C
L
f
= 10 V, I = 16 mA, R = 180 Ω
t
F
L
f
Turn-on time
Turn-off time
= 10 V, I = 10 mA, R = 100 Ω
t
C
L
on
= 10 V, I = 16 mA, R = 180 Ω
t
1.5
F
L
on
= 10 V, I = 10 mA, R = 100 Ω
t
29.0
53.5
C
L
off
= 10 V, I = 16 mA, R = 180 Ω
t
F
L
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
140
120
T =100°C
A
I
F
V
R
CC
100
80
60
40
20
0
T
=25°C
L
A
V
T
=
–40°C
CE
A
t
I
R
V
F
O
t
F
t
ON
t
OFF
0
5
10 15 20 25 30 35 40
Forward Current, I (mA)
45 50
F
isfh619a_01
isfh619a_04
Fig. 1 Switching Waveform and Switching Schematic
Fig. 3 Collector Current vs. Forward Current
1000.00
90.00
I
= 10 (mA)
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
V
=1.2 V
=1.0 V
F
CE
100.00
10.00
1.00
V
CE
I
= 1 (mA)
F
0.10
0.01
0
1
10
100
–40 –20
0
20
40
60
80
100
Forward Current, I (mA)
F
Temperature, T (°C)
A
isfh619a_05
isfh619a_03
Fig. 2 Collector Current (mA) vs. Forward Current (mA)
Fig. 4 Collector Current vs. Ambient Temperature
Document Number 83674
Rev. 1.3, 20-Apr-04
www.vishay.com
3
SFH619A
Vishay Semiconductors
VISHAY
140
120
100
80
1.2
1.0
0.8
0.6
0.4
0.2
0
I
= 10 mA
F
I
= 1.0 mA
F
60
40
20
0
0.6
–40 –20
0
20
40
60
80
100
0.7
0.8
0.9
1.0
CE
1.1
(V)
1.2
A
Collector-Emitter Voltage, V
Temperature, T (°C)
isfh619a_06
isfh619a_09
Fig. 5 Collector Current vs. Collector Emitter Voltage
Fig. 8 Normalized CTR vs. Temperature
1000.00
1000.00
V
=300 V
CE
100.00
10.00
1.00
V
=200 V
t
CE
OFF
ON
100.00
10.00
1.00
V
=50 V
CE
t
0.10
–40 –20
0
20
40
60
80
100
0.1
1
10
Load Resistor, RL (kΩ)
Temperature, T (°C)
A
isfh619a_07
isfh619a_10
Fig. 6 Collector-Emitter Dark Current vs. Collector-Emitter
Voltage over Temperature
Fig. 9 Switching Time vs. Load Resistor
10000
V
=1.2 V
CE
1000
100
V
=1 V
CE
0.10
1.00
10.00
100.00
Forward Current, I (mA)
F
isfh619a_08
Fig. 7 Current Transfer Ratio vs. Forward Current
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4
Document Number 83674
Rev. 1.3, 20-Apr-04
SFH619A
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
typ.
.110 (2.79)
.130 (3.30)
.020 (.508 )
.035 (.89)
.050 (1.27)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
i178027
.100 (2.54)
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
.315 (8.00)
min.
.406 (10.3)
MAX.
18494
Document Number 83674
Rev. 1.3, 20-Apr-04
www.vishay.com
5
SFH619A
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 83674
Rev. 1.3, 20-Apr-04
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