SFH6286-3TRIOS [VISHAY]
AC Input-Transistor Output Optocoupler, 1-Element, 5300V Isolation, DIP-4;
| 型号： | SFH6286-3TRIOS |
| 厂家： | 
VISHAY |
| 描述： | AC Input-Transistor Output Optocoupler, 1-Element, 5300V Isolation, DIP-4 晶体 光电 晶体管 光电晶体管 |
| 文件： | 总8页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH628A / SFH6286
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Low Input
Current
Features
• High Common-mode Interference Immunity
• Isolation Test Voltage, 5300 VRMS
• Low Coupling Capacitance
• Good CTR Linearity Depending on
1
Forward Current
• Low CTR Degradation
A/C
C/A
4
3
1
2
C
E
1
• High Collector-emitter Voltage, VCEO = 55 V
i179080
Agency Approvals
• UL - File No. E52744 System Code J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 VRMS or DC.
Applications
Telecom
Order Information
Industrial Controls
Battery Powered Equipment
Office Machines
Part
Remarks
SFH628A-2
CTR 63 - 200 %, DIP-4
SFH628A-3
CTR 100 - 320 %, DIP-4
SFH628A-4
CTR 160 - 500 %, DIP-4
Description
SFH6286-2
CTR 63 - 200 %, SMD-4
The SFH628A (DIP) and SFH6286 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared emitting diode, which is optically cou-
pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
SFH6286-3
CTR 100 - 320 %, SMD-4
SFH6286-4
CTR 160 - 500 %, SMD-4
SFH628A-2-X006
SFH628A-3-X006
SFH628A-3-X007
SFH628A-4-X006
CTR 63 - 200 %, DIP-4 400 mil (option 6)
CTR 100 - 320 %, DIP-4 400 mil (option 6)
CTR 100 - 320 %, SMD-4 (option 7)
CTR 160 - 500 %, DIP-4 400 mil (option 6)
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
For additional information on the available options refer to
Option Information.
The couplers are end-stackable with 2.54 mm lead
spacing.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
50
Unit
mA
DC Forward current
I
F
Surge forward current
t ≤ 10 µs
I
2.5
A
FSM
Document Number 83722
Rev. 1.4, 26-Apr-04
www.vishay.com
1
SFH628A / SFH6286
Vishay Semiconductors
VISHAY
Output
Parameter
Test condition
Symbol
Value
55
Unit
V
Collector-emitter voltage
V
V
CE
EC
Emitter-collector voltage
Collector current
7.0
50
V
I
mA
mA
mW
C
t
≤ 1.0 ms
I
100
150
p
C
Power dissipation
P
diss
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage between
emitter and detector, refer to
Climate DIN 40046, part2,
Nov.74
V
V
RMS
ISO
Creepage distance
Clearance
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
amb
≥ 10
Storage temperature range
Ambient temperature range
Junction temperature
T
- 55 to +150
- 55 to +100
100
°C
°C
°C
°C
stg
T
amb
T
j
Soldering temperature
max. 10 s. Dip Soldering
distance to seating plane
≥ 1.5 mm
T
260
sld
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
= 5.0 mA
Symbol
Min
Typ.
1.1
Max
1.5
Unit
V
Forward voltage
I
V
C
F
F
Capacitance
V
= 0 V, f = 1.0 MHz
45
pF
R
O
Thermal resistance
R
1070
K/W
thja
Output
Parameter
Test condition
Symbol
Min
Typ.
10
Max
200
Unit
nA
Collector-emitter leakage
current
V
V
= 10 V
I
CE
CE
CEO
Collector-emitter capacitance
Thermal resistance
= 5.0 V, f = 1.0 MHz
C
7
pF
CE
R
500
K/W
thja
www.vishay.com
2
Document Number 83722
Rev. 1.4, 26-Apr-04
SFH628A / SFH6286
VISHAY
Vishay Semiconductors
Coupler
Parameter
Test condition
I = 1.0 mA, I = 0.5 mA
Part
Symbol
Min
Typ.
0.25
Max
0.4
Unit
V
Collector-emitter saturation
voltage
SFH628A-2
SFH6286-2
V
V
V
F
C
CEsat
CEsat
CEsat
I = 1.0 mA, I = 0.8 mA
SFH628A-3
SFH6286-3
0.25
0.25
0.4
0.4
V
V
F
C
I = 1.0 mA, I = 1.25 mA
SFH628A-4
SFH6286-4
F
C
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
63
Typ.
100
Max
200
Unit
%
I /I
I = 1.0 mA, V = 0.5 V
SFH628A-2
SFH6286-2
C
F
F
CE
I = 0.5 mA, V = 1.5 V
SFH628A-2
SFH6286-2
CTR
CTR
CTR
CTR
CTR
32
100
50
%
%
%
%
%
F
CE
I = 1.0 mA, V = 0.5 V
SFH628A-3
SFH6286-3
320
500
F
CE
I = 0.5 mA, V = 1.5 V
SFH628A-3
SFH6286-3
160
250
F
CE
I = 1.0 mA, V = 0.5 V
SFH628A-4
SFH6286-4
160
80
F
CE
I = 0.5 mA, V = 1.5 V
SFH628A-4
SFH6286-4
F
CE
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
6.0
Unit
Turn-on time
V
V
V
V
= 5.0 V, I = 2.0 mA, R = 100 Ω
t
µs
µs
µs
µs
CC
CC
CC
CC
C
L
on
Rise time
Turn-off time
Fall time
= 5.0 V, I = 2.0 mA, R = 100 Ω
t
3.5
5.5
5.0
C
L
r
= 5.0 V, I = 2.0 mA, R = 100 Ω
t
C
L
off
= 5.0 V, I = 2.0 mA, R = 100 Ω
t
C
L
f
± ±
F
R
V
C
L
CC
Input Pulse
±
10%
90%
Output Pulse
47 Ω
t
t
t
r
f
t
on
off
isfh618a_11
isfh618a_12
Fig. 1 Test Circuit
Fig. 2 Test Circuit and Waveforms
Document Number 83722
Rev. 1.4, 26-Apr-04
www.vishay.com
3
SFH628A / SFH6286
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
V
= 0.5 V, C
= f (T )
TR A
CE
I
= 1.0 mA, V = f (T )
F A
F
isfh618a_01
isfh618a_04
Fig. 3 Current Transfer Ratio (typ.)
Fig. 6 Diode Forward Voltage (typ.)
T
C
= 25°C, f = 1.0 MHz,
A
= f (V
)
CE
EE
isfh618a_02
isfh618a_05
Fig. 4 Current Transfer Ratio (typ.)
Fig. 7 Transistor Capacitance
T
C
= 25°C,
= f
A
E
T
= 25°C, V = f (I
)
A
F
F
(V , I
CE
)
F
isfh618a_03
isfh618a_06
Fig. 5 Diode Forward Voltage (typ.)
Fig. 8 Output Characteristics
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4
Document Number 83722
Rev. 1.4, 26-Apr-04
SFH628A / SFH6286
VISHAY
Vishay Semiconductors
I
= f (T )
A
F
isfh618a_07
Fig. 9 Permissible Forward Current Diode
P
= f (T )
A
tot
isfh618a_08
Fig. 10Permissible Power Dissipation
T
= 25°C, I = 1.0 mA,
F
A
V
t
= 5.0 V, t , t ,
ON R
CC
, t , = f (R )
L
OFF
F
isfh618a_09
Fig. 11Switching times (typ.)
Document Number 83722
Rev. 1.4, 26-Apr-04
www.vishay.com
5
SFH628A / SFH6286
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
typ.
.110 (2.79)
.130 (3.30)
.020 (.508 )
.035 (.89)
.050 (1.27)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
i178027
.100 (2.54)
Package Dimensions in Inches (mm)
SMD
.030 (.76)
pin one ID
R .010 (.25)
.100 (2.54)
.070 (1.78)
.060 (1.52)
.255 (6.48)
.268 (6.81)
.315 (8.00) min
.435 (11.05)
3
4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83)
.296 (7.52)
.312 (7.90)
.030 (.76)
.045 (1.14)
.031 (.79)
typ.
10°
.010 (.25)
typ.
.130 (3.30)
.150 (3.81)
ISO Method A
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
4° typ.
.0098 (.249)
.035 (.102)
3°–7°
1.00 (2.54)typ.
Lead
.050 (1.27)
typ.
coplanarity
.004 max.
i178029
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6
Document Number 83722
Rev. 1.4, 26-Apr-04
SFH628A / SFH6286
VISHAY
Vishay Semiconductors
Option 7
Option 6
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.400 (10.16)
.430 (10.92)
.406 (10.3)
MAX.
18487
Document Number 83722
Rev. 1.4, 26-Apr-04
www.vishay.com
7
SFH628A / SFH6286
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83722
Rev. 1.4, 26-Apr-04
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