SFH640-3X001 [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, DIP-6;
| 型号： | SFH640-3X001 |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, DIP-6 |
| 文件： | 总7页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH640
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
FEATURES
• Good CTR linearity with forward current
• Low CTR degradation
1
6
A
C
B
C
E
• Very high collector emitter breakdown voltage,
BVCER = 300 V
5
4
2
3
• Isolation test voltage: 5300 VRMS
• Low coupling capacitance
NC
• High common mode transient immunity
i179004
• Phototransistor optocoupler 6 pin DIP package with base
connection
DESCRIPTION
• Lead (Pb)-free component
The SFH 640 is an optocoupler with very high BVCER, a
minimum of 300 V. It is intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH640-1
CTR 40 % to 80 %, DIP-6
SFH640-2
CTR 63 % to 125 %, DIP-6
SFH640-3
CTR 100 % to 200 %, DIP-6
SFH640-2X007
SFH640-3X007
SFH640-3X009
CTR 63 % to 125 %, SMD-6 (option 7)
CTR 100 % to 200 %, SMD-6 (option 7)
CTR 100 % to 200 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
IF
6.0
60
V
mA
A
DC forward current
Surge forward current
Total power dissipation
OUTPUT
tp ≤ 10 µs
IFSM
Pdiss
2.5
100
mW
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
VCE
VCBO
VEBO
IC
300
300
7.0
V
V
V
50
mA
mA
mW
Surge collector current
Total power dissipation
tp ≤ 10 ms
IC
100
300
Pdiss
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708
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300/7500
VRMS/VPK
V
IO = 500 V, Tamb = 25 °C
RIO
RIO
≥ 1012
≥ 1011
Ω
Ω
Isolation resistance
V
IO = 500 V, Tamb = 100 °C
Insulation thickness between emitter
and detector
≥ 0.4
mm
Creepage distance
Clearance distance
≥ 7
≥ 7
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Storage temperature range
Operating temperature range
Tstg
- 55 to + 150
- 55 to + 100
°C
°C
Tamb
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
Soldering temperature (2)
Tsld
260
°C
Notes
(1)
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2)
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.5
UNIT
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
IF = 10 mA
VV
VR
1.1
V
V
I
R = 10 µA
R = 6 V
VF = 0 V, f = 1 MHz
6
V
IR
0.01
25
10
µA
pF
K/W
CO
Rthja
Thermal resistance
OUTPUT
750
Collector emitter breakdown
voltage
I
R
CE = 1 mA,
BE = 1 MΩ
BVCER
300
7
V
Voltage emitter base
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
I
EB = 10 µA
BVBEO
CCE
V
pF
V
CE = 10 V, f = 1 MHz
CB = 10 V, f = 1 MHz
7
8
V
CCB
pF
V
EB = 5 V, f = 1 MHz
CEB
38
250
pF
Rthja
K/W
COUPLER
Coupling capacitance
CC
0.6
pF
V
IF = 10 mA, IC = 2 mA
IF = 10 mA, IC = 3.2 mA
IF = 10 mA, IC = 5 mA
SFH640-1
SFH640-2
SFH640-3
VCEsat
VCEsat
VCEsat
0.25
0.25
0.25
0.4
0.4
0.4
Saturation voltage collector
emitter
V
V
Collector emitter leakage
current
V
CE = 200 V, RBE = 1 MΩ
ICER
1
100
nA
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
709
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
IC/IF
MIN.
40
TYP.
30
MAX.
UNIT
%
IF = 10 mA, VCE = 10 V
IF = 1 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 1 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 1 mA, VCE = 10 V
SFH640-1
SFH640-1
SFH640-2
SFH640-2
SFH640-3
SFH640-3
80
IC/IF
13
%
IC/IF
63
125
200
%
Current transfer ratio
IC/IF
22
45
%
IC/IF
100
34
%
IC/IF
70
%
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Rise time
TEST CONDITION
SYMBOL
MIN.
TYP.
5
MAX.
UNIT
µs
IC = 2 mA, RL = 100 Ω, VCC = 10 V
ton
tr
IC = 2 mA, RL = 100 Ω, VCC = 10 V
IC = 2 mA, RL = 100 Ω, VCC = 10 V
IC = 2 mA, RL = 100 Ω, VCC = 10 V
2.5
6
µs
Turn-off time
Fall time
toff
tf
µs
5.5
µs
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
80
60
50
30
10
0
V
= 10 V
1
CE
normalized to
= 10 mA,
RL
IF
I
F
NCTR = f (I )
VCC
F
IC
47 Ω
-4
10
-3
10
-2
-1
10
10
isfh640_01a
I /A
F
isfh640_02
Fig. 1 - Switching Times Measurement Test Circuit and Waveform
Fig. 3 - Current Transfer Ratio (typ.)
1.2
V
V
= f (I T )
F, A
F
25 ºC
50 ºC
75 ºC
I/
F
Input pulse
1.1
1.0
0.9
10 %
90 %
Output pules
t
tf
r
toff
ton
isfh640_01b
-1
0
1
2
5mA
10
10
5
10
5
10
F
I
isfh640_03
Fig. 2 - Switching Times Measurement Test Circuit and Waveform
Fig. 4 - Diode Forward Voltage (typ.)
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
-6
20
17.5
15
10
I
f(V , I )
B
I
I
= 0, R
= 1.0 MW,
)
CE
CE = CE
F
BE
= f(V
-7
-8
-9
CER
10
10
10
/
= 100 µA
= 80 µA
= 60 µA
= 40 µA
B
12.5
10
/
/
/
/
B
B
B
B
7.5
5
-10
-11
-12
10
10
10
2.5
= 20 µA
2
0
10
-2
-1
V
0
1
10
10
10
10
0
25 50 75 100 125 150 175 200
/V
V
/V
CE
CE
isfh640_04
isfh640_07
Fig. 5 - Output Characteristics (typ.)
Fig. 8 - Collector-Emitter Leakage Current (typ.)
30
100
I
f(V , I )
CE = CE
F
90
80
70
60
50
40
30
20
10
0
I
= f (T )
A
F
25
20
15
10
5
/
= 20mA
F
/
/
/
/
= 16mA
= 14mA
= 12mA
F
F
F
F
= 10mA
1
0
10
-2
-1
0
2
0
10 20 30 40 50 60 70 80 90 100
10
10
10
10
T /º C
V
/V
A
CE
isfh640_05
isfh640_08
Fig. 6 - Output Characteristics (typ.)
Fig. 9 - Permissible Loss Diode
100
400
350
300
250
200
150
100
50
f = 1.0 MHz,
P
= f (T )
A
IOT
90
80
70
60
50
40
30
20
10
0
I
= f(V
)
CE
CB
EB
CE
C
C
= f(V ),
CB
C
EB
= f(V
)
EB
Transistor
C
CB
C
CE
-1
Diode
10 20 30 40 50 60 70 80 90 100
0
-2
0
1
2
0
10
10
10
10
10
T /º C
V
/V
A
XX
isfh640_06
isfh640_09
Fig. 7 - Transistor Capacitances (typ.)
Fig. 10 - Permissible Power Dissipation
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
711
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
Pin one ID
2
1
3
0.248 (6.30)
0.256 (6.50)
ISO method A
4
5
6
0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
typ.
(0.45)
0.048
0.039
(1.00)
min.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18°
4°
typ.
0.114 (2.90)
0.130 (3.0)
0.031 (0.80) min.
0.010 (0.25)
0.031 (0.80)
typ.
3° to 9°
0.018 (0.45)
0.035 (0.90)
0.300 to 0.347
0.022 (0.55)
i178004
0.100 (2.54) typ.
(7.62 to 8.81)
Option 7
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
typ.
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) typ.
0.315 (8.0)
min.
0.020 (0.51)
0.040 (1.02)
0.331 (8.4)
15° max.
min.
0.315 (8.00)
min.
0.406 (10.3)
max.
18494
www.vishay.com
712
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83682
Rev. 1.4, 10-Dec-08
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83682
Rev. 1.4, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
713
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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