SI-3552 [VISHAY]
N- and P-Channel 30-V (D-S) MOSFET; N和P通道30 - V（D -S）的MOSFET
| 型号： | SI-3552 |
| 厂家： | 
VISHAY |
| 描述： | N- and P-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
Si3552DV
Vishay Siliconix
New Product
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.105 @ V = 10 V
"2.5
"2.0
"1.8
"1.2
GS
N-Channel
P-Channel
30
0.175 @ V = 4.5 V
GS
0.200 @ V = –10 V
GS
–30
0.360 @ V = –4.5 V
GS
D
1
S
2
TSOP-6
Top View
G1
S2
G2
D1
S1
D2
1
2
3
6
G
2
G
1
3 mm
5
4
S
1
D
2
2.85 mm
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
30
–30
"20
"1.8
"1.2
"7
DS
GS
V
"20
"2.5
"2.0
"8
T
= 25_C
= 70_C
A
a, b
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
1.05
–1.05
T
= 25_C
= 70_C
1.15
0.73
A
a, b
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
93
130
75
110
150
90
a
Maximum Junction-to-Ambient
R
thJA
Maximum Junction-to-Lead
R
thJL
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si3552DV
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
= V , I = 250 mA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
= V , I = –250 mA
–1.0
DS
DS
GS
D
"100
"100
1
I
V
= 0 V, V = "20 V
nA
GSS
GS
V
= 24 V, V = 0 V
GS
DS
V
DS
= –24 V, V = 0 V
–1
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
5
DS
GS
J
V
DS
= –24 V, V = 0 V, T = 55_C
–5
GS
J
V
= 5 V, V = 10 V
5
DS
GS
a
On-State Drain Current
I
A
D(on)
V
= –5 V, V = –10 V
GS
–5
DS
V
= 10 V, I = 2.5 A
N-Ch
0.085
0.105
0.200
0.175
0.360
GS
D
V
GS
= –10 V, I = –1.8 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.165
0.140
0.298
4.3
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 2.0 A
D
GS
V
GS
= –4.5 V, I = –1.2 A
D
V
= 10 V, I = 2.5 A
D
DS
a
Forward Transconductance
g
fs
S
V
V
DS
= –15 V, I = –1.8 A
2.4
D
I
S
= 1.05 A, V = 0 V
0.81
–0.83
1.10
GS
a
Diode Forward Voltage
V
SD
I
S
= –1.05 A, V = 0 V
GS
–1.10
Dynamicb
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.1
2.4
0.7
0.9
0.7
0.8
7
3.2
3.6
Total Gate Charge
Q
g
N-Channel
V
= 15 V, V = 5 V, I = 1.8 A
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
Q
nC
gs
P-Channel
V
DS
= –15 V, V = –5 V, I = –1.8 A
GS D
gd
11
12
14
18
20
18
8
t
d(on)
8
N-Channel
9
V
= 15 V, R = 15 W
DD
L
t
r
I
^ 1 A, V
= 10 V, R = 6 W
GEN G
12
13
12
5
D
P-Channel
= –15 V, R = 15 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
^ –1 A, V
= –10 V, R = 6 W
GEN G
t
f
7
11
60
60
I
= 1.05 A, di/dt = 100 A/ms
= –1.05 A, di/dt = 100 A/ms
35
30
F
Source-Drain
Reverse Recovery Time
t
rr
I
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si3552DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
N-CHANNEL
Output Characteristics
Transfer Characteristics
10
10
8
T
= –55_C
C
V
GS
= 10 thru 5 V
25_C
8
6
4
2
0
6
4 V
125_C
4
2
3 V
2V
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.25
0.20
0.15
0.10
0.05
0
300
250
200
150
100
50
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
V
GS
= 10 V
DS
I
D
= 1.8
A
I = 2.5 A
D
6
4
2
0
0
1
2
3
4
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si3552DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
10
I
D
= 2 A
0.32
0.24
0.16
0.08
0
I
D
= 2.5 A
T = 150_C
J
1
T = 25_C
J
0.1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
0.4
0.2
8
6
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
4
2
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 130_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-4
Si3552DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
P-CHANNEL
Output Characteristics
Transfer Characteristics
10
8
6
4
2
0
6 V
V
= 10 thru 7 V
GS
T
= –55_C
25_C
C
8
5 V
4 V
6
4
2
0
125_C
2 V
3 V
4
0
1
2
3
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.6
0.5
0.4
0.3
0.2
0.1
0
300
240
180
120
60
C
iss
V
= 4.5 V
GS
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-5
Si3552DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
P-CHANNEL
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
V
= 10 V
DS
GS
I
D
= 1.8
A
I = 1.8 A
D
8
6
4
2
0
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0
10
I
D
= 1.8 A
I
D
= 1 A
T = 150_C
J
1
T = 25_C
J
0.1
0
2
4
6
– Gate-to-Source Voltage (V)
GS
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
V
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
0.6
8
0.4
0.2
6
I
D
= 250 mA
4
2
0.0
–0.2
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-6
Si3552DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 130_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
2-7
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