SI1012R-T1 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SI1012R-T1
型号: SI1012R-T1
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

文件: 总6页 (文件大小:89K)
下载:  下载PDF数据表文档文件

SI1012R-T1-E3

N-Channel 1.8-V (G-S) MOSFET

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156 VISHAY

SI1012R-T1-GE3

N-Channel 1.8-V (G-S) MOSFET

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56 VISHAY

SI1012R-T1-GE3

N-Channel 1.8 V (G-S) MOSFET

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24 VISHAY

SI1012X

N-Channel 1.8 V (G-S) MOSFET

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18 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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20 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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14 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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14 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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28 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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73 VISHAY

SI1012X

N-Channel 1.8-V (G-S) MOSFET

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12 VISHAY

SI1012X-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

SI1012X-T1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

SI1012X-T1-E3

N-Channel 1.8-V (G-S) MOSFET

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36 VISHAY

SI1012X-T1-GE3

N-Channel 1.8-V (G-S) MOSFET

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35 VISHAY

SI1012X-T1-GE3

N-Channel 1.8 V (G-S) MOSFET

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18 VISHAY