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SI1013X-T1-E3 [VISHAY]

P-Channel 1.8-V (G-S) MOSFET; P沟道1.8 -V （G -S ）的MOSFET
SI1013X-T1-E3
型号： SI1013X-T1-E3
厂家： VISHAY    VISHAY
描述：

P-Channel 1.8-V (G-S) MOSFET
P沟道1.8 -V （G -S ）的MOSFET

晶体 晶体管
文件： 总6页 (文件大小：94K)
中文：  中文翻译
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Si1013R/X  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
•
•
•
•
•
•
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (mA)  
- 350  
High-Side Switching  
1.2 at VGS = - 4.5 V  
1.6 at VGS = - 2.5 V  
2.7 at VGS = - 1.8 V  
RoHS  
Low On-Resistance: 1.2 Ω  
Low Threshold: 0.8 V (Typ.)  
Fast Switching Speed: 14 ns  
1.8 V Operation  
COMPLIANT  
- 20  
- 300  
- 150  
TrenchFET® Power MOSFETs  
2000 V ESD Protection  
APPLICATIONS  
SC-75A or SC-89  
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories  
G
S
1
•
•
•
Battery Operated Systems  
Power Supply Converter Circuits  
Load/Power Switching Cell Phones, Pagers  
3
D
SC-75A (SOT-416):  
Si1013R - Marking Code D  
SC-89 (SOT-490):  
Si1013X - Marking Code B  
2
BENEFITS  
•
•
•
•
•
Ease in Driving Switches  
Top View  
Low Offset (Error) Voltage  
Low-Voltage Operation  
High-Speed Circuits  
Ordering Information:  
Si1013R-T1-E3 (SC-75A, Lead (Pb)-free)  
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)  
Si1013X-T1-E3 (SC-89, Lead (Pb)-free)  
Low Battery Voltage Operation  
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
6
V
VGS  
TA = 25 °C  
TA = 85 °C  
- 400  
- 300  
- 350  
- 275  
Continuous Drain Current (TJ = 150 °C)b  
ID  
mA  
Pulsed Drain Currenta  
- 1000  
IDM  
IS  
Continuous Source Current (diode conduction)b  
- 275  
175  
90  
- 250  
150  
80  
TA = 25 °C  
TA = 85 °C  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationb for SC-75  
Maximum Power Dissipationb for SC-89  
PD  
mW  
275  
160  
250  
140  
TJ, Tstg  
ESD  
Operating Junction and Storage Temperature Range  
Gate-Source ESD Rating (HBM, Method 3015)  
- 55 to 150  
2000  
°C  
V
Notes:  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 board.  
Document Number: 71167  
S-81444-Rev. C, 23-Jun-08  
www.vishay.com  
1
Si1013R/X  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = - 250 µA  
Gate Threshold Voltage  
- 0.45  
V
VDS = 0 V, VGS  
=
4.5 V  
Gate-Body Leakage  
1
2
- 100  
- 5  
µA  
nA  
µA  
mA  
VDS = - 16 V, VGS = 0 V  
DS = - 16 V, VGS = 0 V, TJ = 85 °C  
VDS = - 5 V, VGS = - 4.5 V  
- 0.3  
IDSS  
Zero Gate Voltage Drain Current  
V
On-State Drain Currenta  
ID(on)  
- 700  
VGS = - 4.5 V, ID = - 350 mA  
0.8  
1.2  
1.2  
1.6  
2.7  
Drain-Source On-State  
Resistancea  
RDS(on)  
V
V
GS = - 2.5 V, ID = - 300 mA  
GS = - 1.8 V, ID = - 150 mA  
Ω
1.8  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
0.4  
S
V
gfs  
VDS= - 10 V, ID = - 250 mA  
IS = - 150 mA, VGS = 0 V  
VSD  
- 0.8  
- 1.2  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
1500  
150  
450  
5
V
DS = - 10 V, VGS = - 4.5 V, ID = - 250 mA  
pC  
ns  
9
VDD = - 10 V, RL = 47 Ω  
ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
35  
11  
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.  
1.0  
1000  
800  
600  
400  
200  
0
V
GS  
= 5 thru 3 V  
2.5 V  
T = - 55 °C  
J
0.8  
0.6  
0.4  
0.2  
0.0  
25 °C  
125 °C  
2 V  
1.8 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
GS  
- Gate-to-Source Voltage (V)  
V
DS  
- Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 71167  
S-81444-Rev. C, 23-Jun-08  
Si1013R/X  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
120  
100  
80  
60  
40  
20  
0
V
GS  
= 1.8 V  
C
iss  
V
GS  
= 2.5 V  
V
GS  
= 4.5 V  
C
oss  
C
rss  
0
200  
400  
600  
800  
1000  
0
4
8
12  
16  
20  
125  
6
V
- Drain-to-Source Voltage (V)  
I
D
- Drain Current (mA)  
DS  
On-Resistance vs. Drain Current  
Capacitance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
5
V
= 10 V  
= 250 mA  
DS  
I
D
4
3
2
1
0
V
= 4.5 V  
GS  
I
D
= 350 mA  
V
= 1.8 V  
GS  
I
D
= 150 mA  
0.0  
0.2  
0.4  
Q
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
- 50  
- 25  
0
25  
50  
75  
100  
T
- Junction Temperature (°C)  
- Total Gate Charge (nC)  
J
g
Gate Charge  
On-Resistance vs. Junction Temperature  
5
1000  
T
J
= 125 °C  
4
3
2
1
0
100  
10  
T
= 25 °C  
J
I
= 350 mA  
D
T
= - 55 °C  
J
I
= 200 mA  
D
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
1
2
3
4
5
V
GS  
- Gate-to-Source Voltage (V)  
V
SD  
- Source-to-Drain Voltage (V)  
Surge-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 71167  
S-81444-Rev. C, 23-Jun-08  
www.vishay.com  
3
Si1013R/X  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.3  
0.2  
I
D
= 0.25 mA  
0.1  
0.0  
V
= 4.5 V  
GS  
- 0.1  
- 0.2  
- 0.3  
- 50  
- 25  
0
25  
50  
75  
100  
125  
- 50  
- 25  
0
25  
50  
75  
100  
125  
T
J
- Temperature (°C)  
T
J
- Temperature (°C)  
Threshold Voltage Variance vs. Temperature  
IGSS vs. Temperature  
7
6
5
4
3
2
1
0
- 50  
- 25  
0
25  
50  
75  
100  
125  
T
J
- Temperature (°C)  
BVGSS vs. Temperature  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 833 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)  
www.vishay.com  
4
Document Number: 71167  
S-81444-Rev. C, 23-Jun-08  
Si1013R/X  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?71167.  
Document Number: 71167  
S-81444-Rev. C, 23-Jun-08  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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