SI1022R_10 [VISHAY]
N-Channel 60 V (D-S) MOSFET; N沟道60 V （D -S ）的MOSFET
| 型号： | SI1022R_10 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60 V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1022R
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS(min.) (V)
RDS(on) ()
VGS(th) (V)
ID (mA)
Definition
TrenchFET® Power MOSFETs
Low On-Resistance: 1.25
Low Threshold: 2.5 V
Low Input Capacitance: 30 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Miniature Package
1.25 at VGS = 10 V
60
1 to 2.5
330
•
•
•
•
•
•
•
•
•
SC-75A
(SOT-416)
ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
G
S
1
2
APPLICATIONS
3
D
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
•
•
Battery Operated Systems
Solid State Relays
Marking Code: E
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
BENEFITS
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
TA = 85 °C
330
Continuous Drain Currenta
Pulsed Drain Currenta
Power Dissipationa
ID
240
mA
IDM
PD
650
TA = 25 °C
250
mW
TA = 85 °C
130
Thermal Resistance, Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
RthJA
500
°C/W
°C
TJ, Tstg
- 55 to 150
Notes:
a. Surface mounted on FR4 board, power applied for t 10 s.
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
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1
Si1022R
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = 10 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
60
1
V
VGS(th)
VDS = VGS, ID = 0.25 mA
2.5
150
500
20
VDS = 0 V, VGS
=
10 V
TJ = 85 °C
5 V
VDS = 50 V, VGS = 0 V
TJ = 85 °C
VDS = 60 V, VGS = 0 V
IGSS
Gate-Body Leakage
V
DS = 0 V, VGS =
nA
10
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
100
1
µA
V
DS = 10 V, VGS = 4.5 V
DS = 7.5 V, VGS = 10 V
500
800
ID(on)
mA
V
VGS = 4.5 V, ID = 200 mA
TJ = 125 °C
GS = 10 V, ID = 500 mA
TJ = 125 °C
3.0
5.0
Drain-Source On-State Resistancea
RDS(on)
V
1.25
2.25
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 10 V, ID = 200 mA
VGS = 0 V, IS = 200 mA
100
mS
V
VSD
1.3
Ciss
Coss
Crss
Qg
Input Capacitance
30
6
VDS = 25 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
pF
nC
2.5
VDS = 10 V, ID = 250 mA, VGS = 4.5 V
0.6
Switchingb, c
Turn-On Time
Turn-Off Time
t(on)
t(off)
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGEN = 10 V, Rg = 10
25
35
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
1200
900
600
300
0
1.0
0.8
0.6
0.4
0.2
0.0
6 V
T = - 55 °C
J
V
= 10 V thru 7 V
GS
5 V
4 V
25 °C
125 °C
3 V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 0 V
GS
f = 1 MHz
V
= 4.5 V
GS
C
iss
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
- Drain Current (mA)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
2.0
1.6
1.2
0.8
0.4
0.0
7
6
5
4
3
2
1
0
V
= 10 V at 500 mA
V
= 10 V
= 250 mA
GS
DS
I
D
V
= 4.5 V
GS
at 200 mA
- 50 - 25
0
25
50
75
100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
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Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
1000
5
4
3
2
1
0
V
= 0 V
GS
100
T = 125 °C
J
I
D
= 500 mA
10
1
T = 25 °C
J
I
D
= 200 mA
T = - 55 °C
J
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
GS
V
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.2
3
2.5
I
D
= 250 µA
2
0.0
1.5
- 0.2
- 0.4
- 0.6
- 0.8
1
0.5
0
T
A
= 25 °C
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
Time (s)
T - Junction Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage Variance Over Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
- 1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71331.
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4
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Package Information
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SC-75A: 3-LEADS
Vishay Siliconix
L2
D
b b b
1
2
D
e2
2X
D
3
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
1
2
b b b
C
2X
bbb
C
2X
3
4
e3
B1
2XB1
b1
M
ddd
C
A –
B
D
With Tin Planting
Base Metal
c1
5
Section B-B
b b b
C
4X
Seating Plane
D
Notes
Dimensions in millimeters will govern.
1. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2. Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
MILLIMETERS
DIM.
A
MIN.
-
NOM.
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
NOTE
-
A1
A2
B1
b1
c
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
-
0.70
-
5
-
-
5
5
c1
D
-
1.575
1.60
1, 2
5. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
E
E1
e1
e2
e3
L
0.76
1, 2
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 REF
0.15 BSC
-
DIMENSIONS
TOLERANCES
aaa
bbb
ccc
ddd
0.10
0.10
0.10
0.10
0.15
0.30
L1
L2
0°
4°
8°
1
-
10°
ECN: E11-2210-Rev. D, 08-Aug-11
DWG: 5868
Revision: 08-Aug-11
Document Number: 71348
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72603
Revision: 21-Jan-08
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19
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Document Number: 91000
Revision: 11-Mar-11
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