SI1033X-E3 [VISHAY]
Transistor;
VISHAY 
Si1033X
Vishay Siliconix
New Product
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
1.5ĆV Rated
VDS (V)
rDS(on) (W)
ID (mA)
8 @ V = –4.5 V
–150
–125
–100
–30
GS
12 @ V = –2.5
V
GS
–20
15 @ V = –1.8 V
GS
20 @ V = –1.5 V
GS
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Low On-Resistance: 8 W
D Low Threshold: 0.9 V (typ)
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
D Fast Switching Speed: 45 ns (typ) D High-Speed Circuits
D 1.5-V Operation
D Low Battery Voltage Operation
D Gate-Source ESD Protection
SC-89
S
1
1
6
D
1
2
3
5
4
G
D
G
Marking Code: K
1
2
S
2
2
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–20
DS
V
V
GS
"5
T
= 25_C
= 85_C
–155
–110
–145
–105
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
mA
b
Pulsed Drain Current
I
–650
DM
a
Continuous Source Current (diode conduction)
I
–450
280
–380
250
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
mW
D
T
A
145
130
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T , T
–55 to 150
2000
_C
V
J
stg
ESD
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71428
S-03201—Rev. A, 12-Mar-01
www.vishay.com
1
Si1033X
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = –250 mA
–0.40
–1.20
"1
V
GS(th)
DS
GS
D
V
= 0 V, V = "2.8 V
"0.5
DS
DS
GS
Gate-Body Leakage
I
mA
GSS
V
= 0 V, V = "4.5 V
"1
–1
"2
GS
V
= –16 V, V = 0 V
–500
–10
nA
mA
DS
GS
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –4.5 V
–200
mA
D(on)
GS
V
GS
= –4.5 V, I = –150 mA
8
D
V
= –2.5 V, I = –125 m A
12
15
20
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= –1.8 V, I = –100 m A
D
V
= –1.5 V, I = –30 m A
GS
D
a
Forward Transconductance
g
0.4
S
V
V
= –10 V, I = –150 mA
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= –150 mA, V = 0 V
–1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
1500
150
g
Q
Q
V
= –10 V, V = –4.5 V, I = –150 mA
pC
ns
gs
gd
DS
GS
D
450
t
55
30
60
30
d(on)
t
r
V
DD
= –10 V, R = 65 W
L
I
D
^ –150 mA, V
= –4.5 V, R = 10 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Output Characteristics
Transfer Characteristics
0.5
= 5 thru 2.5 V
500
400
300
200
100
0
2 V
V
GS
T = –55_C
25_C
J
0.4
0.3
0.2
0.1
0.0
1.8 V
125_C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
2
Si1033X
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
On-Resistance vs. Drain Current
Capacitance
25
20
15
10
5
120
100
80
60
40
20
0
V
= 0 V
GS
V
= 1.8 V
GS
f = 1 MHz
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
0
200
400
600
800
1000
0
4
8
12
16
20
125
6
I
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
5
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 150 mA
DS
I
D
4
3
2
1
0
V
= 4.5 V
= 150 mA
GS
I
D
V
= 1.8 V
= 125 mA
GS
I
D
0.0
0.2
0.4
Q
0.6
0.8
1.0
1.2
1.4
1.6
–50
–25
0
25
50
75
100
– Total Gate Charge (nC)
T – Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
1000
100
10
T
= 125_C
J
40
30
20
10
0
I
= 150 mA
D
T
= 25_C
J
T
= –55_C
J
I
D
= 125 mA
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
3
Si1033X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Threshold Voltage Variance vs. Temperature
I
vs. Temperature
GSS
0.3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.2
I
D
= 0.25 mA
0.1
V
GS
= 2.8 V
–0.0
–0.1
–0.2
–0.3
–50
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
T
– Temperature (_C)
T
J
– Temperature (_C)
J
BV
vs. Temperature
GSS
0
–1
–2
–3
–4
–5
–6
–7
–50
–25
0
25
50
75
100
125
T
– Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
=500_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
SI1033X-T1-GE3
TRANSISTOR 145 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-89, 6 PIN, FET General Purpose Small Signal
VISHAY
SI1034CX-T1-GE3
TRANSISTOR 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明