SI1037X-T1-E3 [VISHAY]
Transistor;
| 型号： | SI1037X-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1037X
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
ID (A)
- 0.84
- 0.73
- 0.64
Definition
0.195 at VGS = - 4.5 V
0.260 at VGS = - 2.5 V
0.350 at VGS = - 1.8 V
•
•
•
TrenchFET® Power MOSFET
Low Threshold
Smallest LITTLE FOOT® Package:
1.6 mm x 1.6 mm
- 20
•
•
Low 0.6 mm Profile
Compliant to RoHS Directive 2002/95/EC
SC-89 (6-LEADS)
APPLICATIONS
•
Cell Phones and Pagers
- Load Switch
Battery Operated Systems
D
D
G
1
2
3
6
D
D
S
•
Marking Code
WL
5
4
N
Lot Traceability
and Date Code
Part Number Code
Top View
Ordering Information: Si1037X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
5 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
VGS
TA = 25 °C
TA = 70 °C
- 0.84
- 0.68
- 0.77
- 0.62
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
- 4
Continuous Diode Current (Diode Conduction)a
- 0.18
0.21
- 0.14
0.17
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
0.13
0.10
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
500
Maximum
600
Unit
t 5 s
Maximum Junction-to-Ambienta
RthJA
°C/W
Steady State
600
720
Notes:
a. Surface mounted on 1" x 1" FR4 board with minimum copper.
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
Si1037X
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
Gate-Body Leakage
- 0.45
V
VDS = 0 V, VGS
=
8 V
100
- 1
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 0.77 A
VGS = - 2.5 V, ID = - 0.67 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 5
ID(on)
- 4
0.160
0.212
0.290
3.1
0.195
0.260
0.350
Drain-Source On-State Resistancea
RDS(on)
V
GS = - 1.8 V, ID = - 0.2 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 10 V, ID = - 0.77 A
IS = - 0.14 A, VGS = 0 V
S
V
VSD
- 0.78
- 1.2
5.5
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
3.5
0.65
0.60
10
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.77 A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
ns
20
30
60
20
40
15
V
DD = - 10 V, RL = 20
ID - 0.5 A, VGEN = - 4.5 V, RG = 6
td(off)
tf
Turn-Off Delay Time
Fall Time
30
10
trr
IF = - 0.14 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
20
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
4.0
3.2
2.4
1.6
0.8
0.0
4.0
3.2
2.4
1.6
0.8
0.0
T
C
= - 55 °C
25 °C
V
= 5 V thru 2.5 V
GS
2 V
125 °C
1.5 V
1 V
3.2
0.0
0.8
V
1.6
2.4
4.0
0.0
0.5
1.0
1.5
2.0
2.5
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
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Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
Si1037X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
600
500
400
300
200
100
0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
4
8
12
16
20
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
D
= 4.5 V
DS
= 0.77 A
GS
I
I = 0.77 A
0
1
2
3
4
- 50 - 25
0
T
25
50
75
100 125 150
Q - Total Gate Charge (nC)
g
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
4
1
0.5
0.4
0.3
0.2
0.1
0.0
T
= 150 °C
J
I
D
= 0.77 A
I
D
= 0.2 A
T
= 25 °C
J
0.1
0
1
2
3
4
5
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
3
Si1037X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
0.35
4
0.25
3
I
D
= 250 µA
0.15
0.05
2
1
0
- 0.05
- 0.15
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
- Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 600 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70686.
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Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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