SI1070X_10 [VISHAY]
N-Channel 30 V (D-S) MOSFET; N沟道30 V （D -S ）的MOSFET
| 型号： | SI1070X_10 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1070X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ.)
Definition
1.2a
1.0
0.099 at VGS = 4.5 V
0.140 at VGS = 2.5 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
30
3.5
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Devices
•
SC-89 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
XX
5
4
U
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
1.2b, c
1b, c
6
TA = 25 °C
A = 70 °C
Continuous Drain Current (TJ = 150 °C)a
ID
T
A
IDM
IAS
EAS
IS
Pulsed Drain Current
Avalanche Current
9
L = 0.1 mH
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
4.01
mJ
A
0.2b, c
0.236b, c
0.151b, c
- 55 to 150
TA = 25 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
440
Maximum
Unit
t 5 s
530
650
Maximum Junction-to-Ambientb, d
RthJA
°C/W
Steady State
540
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
1
Si1070X
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
24.5
mV/°C
VGS(th) Temperature Coefficient
- 3.81
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.7
6
1.55
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
nA
µA
A
VDS = 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
V
DS = 30 V, VGS = 0 V, TJ = 85 °C
10
On-State Drain Currenta
V
DS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.2 A
GS = 2.5 V, ID = 1.0 A
VDS = 15 V, ID = 1.2 A
0.082
0.116
5
0.099
0.140
Drain-Source On-State Resistancea
V
Forward Transconductance
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
385
55
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 1.2 A
pF
30
3.8
3.5
1.1
0.98
4.7
10
8.3
4.1
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
6.2
15
33
21
9
td(on)
tr
td(off)
tf
22
VDD = 15 V, RL = 15
ns
ID 1.0 A, VGEN = 4.5 V, Rg = 1
Turn-Off DelayTime
Fall Time
14
6
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
trr
6
A
V
IS = 1.2 A
0.8
19.4
18.43
16.4
3
1.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
29.5
27.5
nC
Qrr
ta
IF = 3.8 A, dI/dt = 100 A/µs
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
6
5
4
3
2
1
0
3.0
2.4
1.8
1.2
0.6
0.0
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
T
= 125 °C
C
V
GS
= 2 V
T
= 25 °C
C
T
=
- 55 °C
2.4
C
V
GS
= 1.5 V
0.0
0.6
1.2
1.8
2.4
0.0
0.6
1.2
1.8
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temp.
0.30
0.25
0.20
0.15
0.10
0.05
0.00
500
400
300
200
100
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
1
2
3
4
5
6
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 4.5 V
GS
= 1.2 A
I
D
= 1.2 A
I
V
DS
= 15 V
V
GS
= 24 V
V
= 2.5 V
GS
= 1 A
I
D
0
1
2
3
4
5
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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3
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
10
0.24
0.18
0.12
0.06
0.00
I
D
= 1.2 A
1
T
A
= 125 °C
T
= 150 °C
J
0.1
0.01
T
= 25 °C
J
T
A
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
V
GS
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
1.5
1.4
5.0
4.0
3.0
2.0
1.0
0.0
I
D
= 250 µA
1.2
1.0
0.8
0.6
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
Time (s)
Single Pulse Power
100
1000
T
- Temperature (°C)
J
Threshold Voltage
10
100 µs
Limited by R
DS(on)*
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
0.01
DC
BVDSS Limited
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
> minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
1
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
Notes:
0.02
-2
10
P
DM
t
1
t
2
t
t
1
-3
10
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 540 °C/W
thJA
(t)
Single Pulse
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
-4
10
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73893.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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5
Package Information
Vishay Siliconix
SC89: 6Ć LEADS (SOTĆ563F)
2
3
D
aaa
C
4
e1
2X
4
A
B
D
6
5
4
SECTION B-B
C
6
E/2
E
E1
2
3
2X
DETAIL “A”
aaa
C
2X
1
2
3
5
bbb
C
e
B
4
6X b
ccc
M
C
A–B
D
A1
L1
L
A
A1
SEE DETAIL “A”
Tolerances
Of Form And
Position
MILLIMETERS
Dim
Min
0.56
0.00
0.15
0.10
1.50
1.55
Max
0.60
0.10
0.30
0.18
1.70
1.70
Note
Symbol
aaa
NOTES:
1. Dimensions in millimeters.
0.10
0.10
0.10
A
A1
b
bbb
. Dimension D does not include mold flash, protrusions or gate
2
ccc
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
c
2, 3
2, 3
D
E
. Dimensions D and E1 are determined at the outmost extremes
3
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
1.20 BSC
E1
e
0.50 BSC
1.00 BSC
0.35 BSC
0.20 BSC
e1
L
4
. Datums A, B and D to be determined 0.10 mm from the lead tip.
. Terminal numbers are shown for reference only.
5
L1
. These dimensions apply to the flat section of the lead between
6
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
0.08 mm and 0.15 mm from the lead tip.
Document Number: 71612
25-Jun-01
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.012
0.020
(0.300)
(0.500)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72605
Revision: 21-Jan-08
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21
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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