SI1403DL-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN;
| 型号： | SI1403DL-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1403DL
Vishay Siliconix
New Product
P-Channel 2.5-V (G-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
Pb-free
Available
0.180 at VGS = - 4.5 V
0.200 at VGS = - 3.6 V
0.265 at VGS = - 2.5 V
1.5
1.4
1.2
RoHS*
- 25
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
OA XX
5
4
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1403DL-T1
Si1403DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 Sec
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
12
V
VGS
TA = 25 °C
A = 85 °C
1.5
1.2
1.4
1.0
Continuous Drain Current (TJ = 150 °C)
ID
T
A
IDM
IS
5
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
- 0.8
0.568
0.295
- 0.8
0.625
0.400
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 5 sec
165
180
105
200
220
130
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
RthJF
Steady State
Steady State
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71072
S-60364–Rev. C, 13-Mar-06
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1
Si1403DL
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
Gate-Body Leakage
- 0.6
- 1.5
100
- 1
V
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 5
V
DS = - 5 V, VGS = - 4.5 V
ID(on)
- 2
VGS = - 4.5 V, ID = - 1.5 A
0.145
0.165
0.220
3.8
0.180
0.200
0.265
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
rDS(on)
V
V
GS = - 3.6 V, ID = - 1.4 A
GS = - 2.5 V, ID = - 0.8 A
Ω
gfs
VGS = - 10 V, ID = - 1.5 A
IS = - 0.8, VGS = 0 V
S
V
VSD
- 0.78
- 1.1
4.5
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
3.7
0.9
0.9
8
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A
nC
ns
12
40
32
30
40
VDD = -10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
25
21
20
20
td(off)
tf
Turn-Off DelayTime
Fall Time
trr
IF = - 0.8 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T = 25 °C, unless noted
A
4.0
3.2
2.4
1.6
0.8
0
4.0
3.2
2.4
1.6
0.8
0
T
= - 55 °C
25 °C
C
V
= 5 thru 2.5 V
GS
125 °C
2 V
1, 1.5 V
3.2
0
0.8
1.6
2.4
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
–
V
DS
Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71072
S-60364–Rev. C, 13-Mar-06
Si1403DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25 °C, unless noted
A
0.40
600
500
400
300
200
100
0
C
iss
0.32
V
GS
= 2.5 V
0.24
0.16
0.08
0
V
V
= 3.6 V
= 4.5 V
GS
GS
C
oss
C
rss
0
1
2
3
4
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V = 4.5 V
GS
I = 1.5 A
D
V
= 10 V
= 1.5 A
DS
I
D
- 50 - 25
0
25
50
75
100 125 150
0
1
2
3
4
T – Junction Temperature (°C)
J
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
0.5
0.4
0.3
0.2
0.1
0
5
1
T = 150 °C
J
I
D
= 0.8 A
I
D
= 1.5 A
T = 25 °C
J
0.1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
GS
Capacitance
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71072
S-60364–Rev. C, 13-Mar-06
www.vishay.com
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Si1403DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25 °C, unless noted
A
0.4
10
0.3
8
I
D
= 250 µA
0.2
0.1
6
4
2
0.0
- 0.1
- 0.2
0
–2
–1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
30
Time (sec)
T
J
– Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 180 °C/W
thJA
(t)
3. T – T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71072.
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Document Number: 71072
S-60364–Rev. C, 13-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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