SI1411DH-T1-GE3 [VISHAY]
TRANSISTOR 420 mA, 150 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal;![SI1411DH-T1-GE3](http://pdffile.icpdf.com/pdf2/p00307/img/icpdf/SI1411DH-T1-_1848857_icpdf.jpg)
型号: | SI1411DH-T1-GE3 |
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描述: | TRANSISTOR 420 mA, 150 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总11页 (文件大小:274K) |
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Si1411DH
Vishay Siliconix
www.vishay.com
P-Channel 150 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFETS
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
-0.52
-0.51
Qg (TYP.)
• Small, thermally enhanced SC-70 package
• Ultra low on-resistance
2.6 at VGS = -10 V
2.7 at VGS = -6 V
-150
4.2 nC
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SOT-363
SC-70 Single (6 leads)
S
4
APPLICATIONS
D
5
• Active clamp circuits in DC/DC power supplies
D
6
S
3
G
2
D
G
1
D
Top View
Marking Code: BG
Ordering Information:
Si1411DH-T1-GE3 (lead (Pb)-free and halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
5 s
STEADYSTATE
-150
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TA = 25 °C
TA = 85 °C
-0.52
-0.38
-0.42
-0.3
Continuous Drain Current (TJ = 150 °C) a
ID
Pulsed Drain Current
IDM
IS
-0.8
A
Continuous Diode Current (Diode Conduction) a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
-1.3
-0.83
IAS
EAS
-2.1
0.22
L = 0.1 mH
mJ
W
TA = 25 °C
TA = 85 °C
1.56
0.81
1
Maximum Power Dissipation a
PD
0.52
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYPICAL
60
MAXIMUM
UNIT
°C/W
t 5 s
80
125
45
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
100
RthJF
34
Note
a. Surface mounted on 1" x 1" FR4 board.
S16-0887-Rev. D, 09-May-16
Document Number: 73242
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1411DH
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = -100 μA
-2.5
-
-
-4.5
100
-1
V
VDS = 0 V, VGS
=
20 V
-
nA
VDS = -150 V, VGS = 0 V
VDS = -150 V, VGS = 0 V, TJ = 85 °C
VDS = -15 V, VGS = -10 V
VGS = -10 V, ID = -0.5 A
VGS = -6 V, ID = -0.5 A
-
-
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
μA
A
-
-
-5
-0.8
-
-
-
-
-
-
2.05
2.14
1.5
-0.8
2.6
2.7
-
Drain-Source On-State Resistance a
RDS(on)
Forward Transconductance a
Diode Forward Voltagea
Dynamic b
gfs
VDS = -10 V, ID = -0.5 A
IS = -1.4 A, VGS = 0 V
S
V
VSD
-1.1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
Qgs
Qgd
Rg
-
-
-
-
-
-
-
-
-
-
4.2
0.9
1.3
8.5
4.5
11
9
6.3
-
V
DS = -75 V, VGS = -10 V, ID = -0.5 A
f = 1 MHz
nC
-
-
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
7
17
14
17
55
100
VDD = -75 V, RL = 75
ID -1 A, VGEN = -4.5 V, Rg = 6
Turn-Off Delay Time
Fall Time
ns
11
36
65
Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF = -0.5 A, dI/dt = 100 A/μs
Qrr
nC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0887-Rev. D, 09-May-16
Document Number: 73242
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1411DH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 10 V thru 5 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 125 °C
C
25 °C
4 V
- 55 °C
3 V
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
250
200
150
100
50
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
rss
C
oss
0
0
30
60
90
120
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
8
2.5
2.0
1.5
1.0
0.5
0.0
V
I
= 75 V
= 0.5 A
V
D
= 10 V
DS
GS
I = 0.5 A
D
6
4
2
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
- 50 - 25
0
25
T - Junction Temperature (°C)
J
50
75
100 125 150
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73242
S16-0887-Rev. D, 09-May-16
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1411DH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
5
4
3
2
1
0
2
1
T
= 150 °C
J
I
D
= 0.5 A
T
= 25 °C
J
0.1
0.01
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
1.0
35
28
I
D
= 250 µA
T
A
= 25 °C
Single Pulse
0.7
21
0.4
14
7
0.1
- 0.2
- 0.5
- 50 - 25
0
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1
10 µs
100 µs
Limited by
DS(on)
R
*
1 ms
0.1
10 ms
100 ms
1 s, 10 s
100 s, DC
0.01
T
= 25 °C
A
Single Pulse
0.001
0.1
1
DS
10
100
1000
V
- Drain-to-Source Voltage (V)
* V
> minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area
S16-0887-Rev. D, 09-May-16
Document Number: 73242
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1411DH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
0.02
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73242.
S16-0887-Rev. D, 09-May-16
Document Number: 73242
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7_Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7_Nom
D
e
1
1.80
E
-A-
D
1.15
E1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
AN815
Vishay Siliconix
Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
EVALUATION BOARDS ꢀ SINGLE SC70-6
The new single 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the single-channel version.
The evaluation board (EVB) measures 0.6 inches by
0.5 inches. The copper pad traces are the same as in Figure 2.
The board allows examination from the outer pins to 6-pin DIP
connections, permitting test sockets to be used in evaluation
testing. See Figure 3.
52 (mil)
BASIC PAD PATTERNS
6
5
2
4
3
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the basic
pad layout and dimensions. These pad patterns are sufficient
for the low to medium power applications for which this
package is intended. Increasing the drain pad pattern yields a
reduction in thermal resistance and is a preferred footprint.
The availability of four drain leads rather than the traditional
single drain lead allows a better thermal path from the package
to the PCB and external environment.
96 (mil)
71 (mil)
26 (mil)
1
13 (mil)
0, 0 (mil)
18 (mil)
26 (mil)
PIN-OUT
16 (mil)
Figure
1 shows the pin-out description and Pin 1
FIGURE 2.
SC-70 (6 leads) Single
identification.The pin-out of this device allows the use of four
pins as drain leads, which helps to reduce on-resistance and
junction-to-ambient thermal resistance.
SOT-363
SC-70 (6-LEADS)
The thermal performance of the single 6-pin SC-70 has been
measured on the EVB, comparing both the copper and
Alloy 42 leadframes. This test was first conducted on the
traditional Alloy 42 leadframe and was then repeated using the
1-inch2 PCB with dual-side copper coating.
D
D
G
1
2
3
6
5
D
D
S
4
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
Document Number: 71334
12-Dec-03
www.vishay.com
1
AN815
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
vishay.com
FIGURE 3.
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(Package Performance)
COOPER LEADFRAME
Room Ambient 25 _C
Elevated Ambient 60 _C
The junction to foot thermal resistance is a useful method of
comparing different packages thermal performance.
T
J(max) * TA
T
J(max) * TA
PD
+
PD
+
RqJA
RqJA
150oC * 60oC
124oCńW
150oC * 25oC
124oCńW
PD
+
PD
+
A helpful way of presenting the thermal performance of the
6-Pin SC-70 copper leadframe device is to compare it to the
traditional Alloy 42 version.
P
D + 726 mW
P
D + 1.01 W
As can be seen from the calculations above, the compact 6-pin
SC-70 copper leadframe LITTLE FOOT power MOSFET can
handle up to 1 W under the stated conditions.
Thermal performance for the 6-pin SC-70 measured as
junction-to-foot thermal resistance, where the “foot” is the
drain lead of the device at the bottom where it meets the PCB.
The junction-to-foot thermal resistance is typically 40_C/W in
the copper leadframe and 163_C/W in the Alloy 42 leadframe
— a four-fold improvement. This improved performance is
obtained by the enhanced thermal conductivity of copper over
Alloy 42.
Testing
To further aid comparison of copper and Alloy 42 leadframes,
Figure 5 illustrates single-channel 6-pin SC-70 thermal
performance on two different board sizes and two different pad
patterns. The measured steady-state values of RqJA for the
two leadframes are as follows:
LITTLE FOOT 6-PIN SC-70
Power Dissipation
Alloy 42
Copper
The typical RqJA for the single 6-pin SC-70 with copper
leadframe is 103_C/W steady-state, compared with 212_C/W
for the Alloy 42 version. The figures are based on the 1-inch2
FR4 test board. The following example shows how the thermal
resistance impacts power dissipation for the two different
leadframes at varying ambient temperatures.
1) Minimum recommended pad pattern on
the EVB board V (see Figure 3.
329.7_C/W
208.5_C/W
2
2) Industry standard 1-inch PCB with
211.8_C/W
103.5_C/W
maximum copper both sides.
The results indicate that designers can reduce thermal
resistance (RqJA) by 36% simply by using the copper
leadframe device rather than the Alloy 42 version. In this
example, a 121_C/W reduction was achieved without an
increase in board area. If increasing in board size is feasible,
a further 105_C/W reduction could be obtained by utilizing a
1-inch2 square PCB area.
ALLOY 42 LEADFRAME
Room Ambient 25 _C
Elevated Ambient 60 _C
T
J(max) * TA
RqJA
T
J(max) * TA
RqJA
PD
+
PD
+
The copper leadframe versions have the following suffix:
150oC * 25oC
212oCńW
150oC * 25oC
212oCńW
PD
+
PD
+
Single:
Dual:
Si14xxEDH
Si19xxEDH
P
D + 590 mW
P
D + 425 mW
Complementary: Si15xxEDH
Document Number: 71334
12-Dec-03
www.vishay.com
2
AN815
Vishay Siliconix
250
200
150
400
320
240
Alloy
42
Alloy
42
160
80
100
50
Copper
100
Copper
0
0
-5
-4
-3
-2
-1
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
1000
10
10
10
10
10
1
10
100
1000
Time (Secs)
Time (Secs)
2
FIGURE 4.
Leadframe Comparison on EVB
FIGURE 5.
Leadframe Comparison on Alloy 42 1-inch PCB
Document Number: 71334
12-Dec-03
www.vishay.com
3
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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Revision: 08-Feb-17
Document Number: 91000
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