SI1433DH-T1 [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI1433DH-T1 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1433DH
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
PRODUCT SUMMARY
D Thermally Enhanced SC-70 Package
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.150 @ V = -10 V
-2.2
-1.6
GS
D Load Switches
-30
0.260 @ V = -4.5
V
GS
-
-
Notebook PCs
Servers
SOT-363
SC-70 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
BE XX
5
4
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1433DH-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-30
DS
V
"20
GS
T
= 25_C
= 85_C
-1.9
-1.4
-2.2
-1.7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-8
DM
a
Continuous Diode Current (Diode Conduction)
I
-1.4
1.45
0.75
-0.9
0.95
0.5
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
65
105
38
85
130
48
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
1
Si1433DH
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -100 mA
-1
-3
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
"100
nA
GSS
V
= -16 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -4.5 V
-4
A
D(on)
GS
V
= -10 V, I = -2.2 A
0.120
0.210
0.150
0.260
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -4.5 V, I = -1.6 A
D
a
Forward Transconductance
g
V
= -10 V, I = -2.2 A
4
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= -1.2 A, V = 0 V
-0.85
-1.2
5
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
3.1
1.0
1.6
11
g
Q
Q
V
= -15 V, V = -4.5 V, I = -2.2 A
nC
ns
gs
gd
DS
GS
D
t
17
26
27
20
d(on)
t
17
18
13
r
V
= -15 V, R = 15 W
L
= -10 V, R = 6 W
GEN G
DD
I
D
^ -1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8
8
7
6
5
4
3
2
1
0
T
= -55_C
C
V
GS
= 10 thru 5 V
7
6
5
4
3
2
1
0
25_C
125_C
4 V
3 V
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
2
Si1433DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Drain Current
Capacitance
0.75
350
280
210
140
70
0.60
0.45
0.30
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
0.15
0.00
C
rss
0
0
1
2
3
4
5
6
7
8
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 2.2 A
V
GS
= 10 V
DS
I
D
I = 2.2 A
D
6
4
2
0
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.70
0.56
0.42
0.28
0.14
0.00
10
T
= 150_C
J
1
I
D
= 2.2 A
T
= 25_C
J
0.1
0
2
4
6
- Gate-to-Source Voltage (V)
GS
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
V
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
3
Si1433DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
35
28
0.4
0.2
21
I
D
= 250 mA
0.0
-0.2
-0.4
14
7
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
J
Time (sec)
Safe Operating Area
10
Limited by
r
DS(on)
1
1 ms
10 ms
100 ms
1 s
0.1
T
= 25_C
C
10 s
dc
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 105_C/W
thJA
(t)
3. T
- T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
4
Si1433DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
5
相关型号：
SI1458DH-T1-E3
TRANSISTOR 4100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal
VISHAY
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