SI1865DL-E3 [VISHAY]

IC 3 A BUF OR INV BASED PRPHL DRVR, PDSO6, SC-70, 6 PIN, Peripheral Driver;
SI1865DL-E3
型号: SI1865DL-E3
厂家: VISHAY    VISHAY
描述:

IC 3 A BUF OR INV BASED PRPHL DRVR, PDSO6, SC-70, 6 PIN, Peripheral Driver

驱动 光电二极管 接口集成电路
文件: 总6页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si1865DL  
Vishay Siliconix  
New Product  
Load Switch with Level-Shift  
FEATURES  
215 mΩ Low rDS(on) TrenchFET®  
1.8 to 8 V Input  
1.5 to 8 V Logic Level Control  
Low Profile, Small Footprint SC70-6 Package RoHS*  
2000 V ESD Protection On Input Switch, V  
Adjustable Slew-Rate  
PRODUCT SUMMARY  
Pb-free  
VDS2 (V)  
rDS(on) (Ω)  
ID (A)  
Available  
0.215 at VIN = 4.5 V  
0.300 at VIN = 2.5 V  
0.440 at VIN = 1.8 V  
1.2  
1.0  
0.7  
COMPLIANT  
ON/OFF  
1.8 to 8  
1.8 V Rated  
DESCRIPTION  
The Si1865DL includes a P- and N-Channel MOSFET in a  
single SC70-6 package. The low on-resistance P-Channel  
TrenchFET is tailored for use as a load switch. The n-chan-  
nel, with an external resistor, can be used as a level-shift to  
drive the P-Channel load-switch. The N-Channel MOSFET  
has internal ESD protection and can be driven by logic sig-  
nals as low as 1.5 V. The Si1865DL operates on supply lines  
from 1.8 to 8 V, and can drive loads up to 1.2 A.  
APPLICATION CIRCUITS  
20  
I
= 1 A  
ON/OFF  
L
V
= 3 V  
C = 10 µF  
o
i
C
2, 3  
16  
12  
8
t
t
= 1 µF  
4
r
V
OUT  
V
IN  
Q2  
R1  
C1  
6
5
6
f
t
d(off)  
ON/OFF  
LOAD  
C
o
Q1  
4
t
d(on)  
C
i
1
0
0
2
4
6
8
10  
R2  
R2 (k  
)
GND  
R2  
Note: For R2 switching variations with other V /R1  
IN  
combinations See Typical Characteristics  
Si1865DL  
Switching Variation  
R2 at VIN = 2.5 V, R1 = 20 kΩ  
The Si1865DL is ideally suited for high-side load switching in  
portable applications. The integrated n-channel level-shift  
devices saves space by reducing external components. The  
slew rate is set externally so that rise-times can be tailored to  
COMPONENTS  
R1  
R2  
C1  
Pull-Up Resistor  
Typical 10kΩ to 1 mΩ**  
Typical 0 to 100 kΩ**  
Typical 1000 pF  
Optional Slew-Rate Control  
Optional Slew-Rate Control  
different load types.  
**Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.  
*Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71297  
S-60551–Rev. C, 3-Apr-06  
www.vishay.com  
1
Si1865DL  
Vishay Siliconix  
New Product  
FUNCTIONAL BLOCK DIAGRAM  
Si1865DL  
SC70-6  
4
5
Top View  
2, 3  
6
D2  
S2  
Marking Code  
VA XX  
Q2  
R2  
D2  
D2  
R1, C1  
ON/OFF  
S2  
1
2
3
6
5
Lot Traceability  
and Date Code  
R1, C1  
Part # Code  
Q1  
ON/OFF  
4
1
Ordering Information: Si1865DL-T1  
Si1865DL-T1-E3 (Lead (Pb)-free)  
R2  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VIN  
Limit  
Unit  
Input Voltage  
ON/OFF Voltage  
8
V
VON/OFF  
8
Cintinuousa,b  
Pulsedb, c  
1.2  
IL  
Load Current  
3
- 0.4  
A
Continuous Intrinsic Diode Conductiona  
Maximum Power Dissipationa  
IS  
PD  
W
°C  
kV  
0.4  
TJ, Tstg  
ESD  
Operating Junction and Storage Temperature Range  
- 55 to 150  
2
ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω)  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
260  
180  
Maximum  
Unit  
Maximum Junction-to-Ambient (continuous current)a  
Maximum Junction-to-Foot (Q2)  
320  
220  
°C/W  
SPECIFICATIONS T = 25 °C unless otherwise noted  
J
Test Conditions  
Parameter  
Symbol  
Min  
Unit  
Typ  
Max  
OFF Characteristics  
Reverse Leakage Current  
Diode Forward Voltage  
ON Characteristics  
Input Volatge  
VIN  
IQ  
VIN = 8 V, VON/OFF = 0 V  
lS = - 0.4 A  
1
µA  
V
0.85  
1.1  
VIN  
1.8  
8
V
rDS(on)  
VON/OFF = 1.5 , VIN = 4.5 V, ID = 1.2 A  
VON/OFF = 1.5 , VIN = 2.5 V, ID = 1.0 A  
VON/OFF = 1.5 , VIN = 1.8 V, ID = 0.7 A  
VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 A  
VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 A  
0.180 0.215  
0.250 0.300  
0.367 0.440  
On-Resistance (P-Channel) at 1 A  
On-State (P-Channel) Drain-Current  
Ω
1
1
ID(on)  
A
Notes:  
a) Surface Mounted on FR4 Board.  
b) VIN = 8 V, VON/OFF = 8 V, TA = 25 °C.  
c) Pulse test; pulse width 300 µs, duty cycle 2 %.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 71297  
S-60551–Rev. C, 3-Apr-06  
Si1865DL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 1.5 to 8 V  
ON/OFF  
V
= 1.5 to 8 V  
ON/OFF  
T
= 125 °C  
J
T
= 125 °C  
J
T
= 25 °C  
J
T
= 25 °C  
J
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
I
L
– (A)  
I
L
– (A)  
VDROP vs. IL at VIN = 4.5 V  
VDROP vs. IL at VIN = 2.5 V  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 1.5 to 8 V  
ON/OFF  
V
= 1.5 to 8 V  
ON/OFF  
T
= 125 °C  
J
T
= 25 °C  
J
T
= 125 °C  
J
T
= 25 °C  
J
0
1
2
3
4
5
6
0.0  
0.2  
0.4  
0.6  
0.8  
– (A)  
1.0  
1.2  
1.4  
1.6  
I
L
V
(V)  
IN  
VDROP vs. IL at VIN = 1.8 V  
VDROP vs. IL at IL = 0.7 V  
0.10  
0.06  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
I
= 0.7 A  
ON/OFF  
I
= 0.7 A  
ON/OFF  
L
V
L
V
= 1.5 to 8 V  
= 1.5 to 8 V  
V
IN  
= 1.8 V  
0.02  
V
IN  
= 4.5 V  
- 0.02  
- 0.06  
- 0.10  
T
= 125 °C  
J
T
= 25 °C  
J
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
1
2
3
4
5
6
T
– Junction Temperature (°C)  
V
IN  
(V)  
J
VDROP Variance vs. Junction Temperature  
On-Resistance vs. Input Voltage  
Document Number: 71297  
S-60551–Rev. C, 3-Apr-06  
www.vishay.com  
3
Si1865DL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
1.5  
I
= 1 A  
ON/OFF  
L
V
i
I
= 0.7 A  
ON/OFF  
L
V
= 3 V  
= 1.5 to 8 V  
C = 10 µF  
C
1.3  
1.1  
0.9  
0.7  
0.5  
= 1 µF  
o
t
f
t
d(off)  
V
= 1.8 V  
IN  
V
= 4.5 V  
IN  
t
r
t
d(on)  
- 50 - 25  
0
25  
50  
75  
100 125 150  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 1.8 V, R1 = 20 kΩ  
T
– Junction Temperature (°C)  
J
Normalized On-Resistance vs.  
Junction Temperature  
30  
24  
18  
12  
6
20  
16  
12  
8
I
= 1 A  
ON/OFF  
L
V
i
t
r
I
= 1 A  
ON/OFF  
L
V
i
= 3 V  
= 3 V  
C = 10 µF  
C
C = 10 µF  
C
t
t
r
= 1 µF  
o
= 1 µF  
o
f
t
d(off)  
t
f
4
t
d(off)  
t
d(on)  
t
d(on)  
0
0
0
2
4
6
8
0
2
4
6
8
10  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 2.5 V, R1 = 20 kΩ  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 1.8 V, R1 = 20 kΩ  
200  
150  
t
d(off)  
t
f
160  
120  
80  
40  
0
120  
90  
60  
30  
0
t
f
t
d(off)  
I
= 1 A  
ON/OFF  
I
= 1 A  
ON/OFF  
L
V
i
L
V
i
= 3 V  
= 3 V  
C = 10 µF  
C
C = 10 µF  
C
= 1 µF  
= 1 µF  
o
o
t
r
t
d(on)  
t
r
t
d(on)  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 2.5 V, R1 = 300 kΩ  
80  
100  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 4.5 V, R1 = 300 kΩ  
www.vishay.com  
4
Document Number: 71297  
S-60551–Rev. C, 3-Apr-06  
Si1865DL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS 25 °C, unless noted  
120  
90  
60  
30  
0
t
f
t
d(off)  
I
= 1 A  
ON/OFF  
L
V
i
= 3 V  
C = 10 µF  
C
= 1 µF  
o
t
d(on)  
t
r
0
20  
40  
60  
80  
R2 (kΩ)  
Switching Variation  
R2 at VIN = 1.8 V, R1 = 300 kΩ  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 320 °C  
thJA  
(t)  
3. T – T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Dureation (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?71297.  
Document Number: 71297  
S-60551–Rev. C, 3-Apr-06  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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