SI2301BDS-T1-GE3 [VISHAY]

P-Channel 2.5 V (G-S) MOSFET; P沟道2.5 V （G -S ）的MOSFET

SI2301BDS-T1-GE3


型号：	SI2301BDS-T1-GE3
厂家：	VISHAY TELEFUNKEN
描述：	P-Channel 2.5 V (G-S) MOSFET P沟道2.5 V （G -S ）的MOSFET 晶体小信号场效应晶体管光电二极管
文件：	总9页 (文件大小：213K)
下载：	下载PDF数据表文档文件

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387 VISHAY

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P-Channel 20-V (D-S) MOSFET

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132 VISHAY

SI2301CDS-T1-E3

TRANSISTOR 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

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3 VISHAY

SI2301CDS-T1-GE3

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301 VISHAY

SI2301DS

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297 VISHAY

SI2301DS

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493 VISHAY

SI2301DS

P-Channel 1.25-W, 2.5-V MOSFET

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1132 VISHAY

SI2301DST

暂无描述

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1 VISHAY

SI2301DS-T1

P-Channel 1.25-W, 2.5-V MOSFET

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142 VISHAY

SI2301DS-T1

P-Channel 1.25-W, 2.5-V MOSFET

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368 VISHAY

SI2301DS-T1

P-Channel 1.25-W, 2.5-V MOSFET

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141 VISHAY

SI2301DS-T1

Transistor,

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0 VISHAY

SI2301DS-T1-E3

Transistor,

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3 VISHAY

SI2302

N-Channel Enhancement Mode Field Effect Transistor

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1043 MCC

SI2302

N-Channel Enhancement Mode Field Effect Transistor

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1879 MCC

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