SI2326DS [VISHAY]
Transistor;
VISHAY 
Si2326DS
Vishay Siliconix
New Product
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
100
0.250 @ V = 10 V
1.5
GS
TO-236
(SOT-23)
G
S
1
2
3
D
Top View
Si2326DS (D6)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
100
V
"20
T = 25_C
A
1.5
1.2
1.15
0.92
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T = 70_C
A
b
Pulsed Drain Current
I
6
DM
b
Avalanche Current
I
AS
6
L = 0.1 mH
Single Avalanche Energy
E
1.8
0.6
mJ
A
AS
a
Continuous Source Current (Diode Conduction)
I
S
T = 25_C
A
1.25
0.80
0.73
0.47
A
a
Power Dissipation
P
W
D
T = 70_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
80
130
45
100
170
55
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71289
S-2381—Rev. A, 23-Oct-00
www.vishay.com
1
Si2326DS
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(
V
= 0 V, I = 1 mA
100
2
BR)DSS
GS
D
V
V
V
= V , I = 250 mA
GS D
GS(th)
DS
DS
I
V
= 0 V, V = "20 V
"100
1
nA
GSS
GS
V
= 80 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 80 V, V = 0 V, T = 70_C
75
DS
GS
J
a
On-State Drain Current
I
V
w 15 V, V = 10 V
6
A
W
S
V
D(on)
DS
GS
a
Drain-Source On-Resistance
r
V
= 10 V, I = 1.5 A
0.195
4
0.250
1.2
DS(on)
GS
DS
D
a
Forward Transconductance
g
fs
V
I
= 15 V, I = 1.5 A
D
Diode Forward Voltage
V
= 1.0 A, V = 0 V
0.8
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
3.3
4.0
g
Q
gs
Q
gd
0.47
1.45
V
= 50 V, V = 10 V, I = 1.5 A
nC
DS
GS
D
Switching
Turn-On Delay Time
Rise Time
t
7
11
17
d(on)
t
r
11
9
V
= 50 V, R = 33 W
L
= 10 V, R = 6 W
GEN G
DD
ns
ns
I
D
^ 0.2 A, V
Turn-Off Delay Time
Fall-Time
t
15
d(off)
t
f
10
50
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.5 A, di/dt = 100 A/ms
100
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
12
12
9
7 V
V
= 10, 9, 8 V
GS
9
6 V
6
3
0
6
T
= 125_C
C
5 V
4 V
3
25_C
3, 2, 1 V
–55_C
0
0
2
4
6
8
10
0
2
4
6
8
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Document Number: 71289
S-2381—Rev. A, 23-Oct-00
www.vishay.com
2
Si2326DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.6
250
200
150
100
50
0.5
0.4
C
iss
V
= 10 V
GS
0.3
0.2
0.1
0.0
C
oss
C
rss
0
0
3
6
9
12
0
20
40
60
80
100
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
20
16
12
8
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10 V
= 1.5 A
V
= 10 V
GS
DS
I
D
I = 1.5 A
D
4
0
0
1
2
3
4
5
6
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
I
D
= 1.5 A
T
J
= 150_C
0.1
T
J
= 25_C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Document Number: 71289
S-2381—Rev. A, 23-Oct-00
www.vishay.com
3
Si2326DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
12
10
0.3
I
D
= 250 mA
8
6
4
2
0.0
–0.3
–0.6
–0.9
–1.2
T
A
= 25_C
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T – Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 176_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71289
S-2381—Rev. A, 23-Oct-00
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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3200mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
VISHAY
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