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SI3440DV-T1-E3

更新时间：2024-09-18 01:50:26
品牌：VISHAY
描述：N-Channel 150-V (D-S) MOSFET

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SI3440DV-T1-E3 概述

N-Channel 150-V (D-S) MOSFET N沟道150 -V （D -S ）的MOSFET MOS管 小信号场效应晶体管

SI3440DV-T1-E3 规格参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TSOP包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.19
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (ID)：1.2 A最大漏源导通电阻：0.375 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MO-193C
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.14 W认证状态：Not Qualified
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI3440DV-T1-E3 数据手册

通过下载SI3440DV-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si3440DV  
Vishay Siliconix  
New Product  
N-Channel 150-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
D PWM Optimized for Fast Switching In Small  
PRODUCT SUMMARY  
Footprint  
D 100% Rg Tested  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.375 @ V = 10 V  
GS  
1.5  
1.4  
150  
0.400 @ V = 6.0 V  
GS  
D Primary Side Switch for Low Power DC/DC  
Converters  
(1, 2, 5, 6) D  
TSOP-6  
Top View  
1
2
3
6
5
(3) G  
3 mm  
4
(4) S  
2.85 mm  
Ordering Information: Si3440DV-T1—E3  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
150  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
1.5  
1.1  
1.2  
0.8  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
6
4
DM  
Single Avalanche Current  
I
AS  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle v1%)  
Continuous Source Current (Diode Conduction)  
E
AS  
0.8  
mJ  
A
a
I
S
1.7  
2.0  
1.0  
1.0  
T
A
= 25_C  
= 85_C  
1.14  
0.59  
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
45  
90  
25  
62.5  
110  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
1
Si3440DV  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
4
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= 150 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 150 V, V = 0 V, T = 85_C  
GS  
J
a
On-State Drain Current  
I
4
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.310  
0.375  
0.400  
V
= 10 V, I = 1.5 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6.0 V, I = 1.4 A  
0.330  
4.1  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 1.5 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= 1.7 A, V = 0 V  
0.8  
1.2  
8
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
5.4  
1.1  
1.9  
9
g
Q
Q
V
= 75 V, V = 10 V, I = 1.5 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
f = 1 MHz  
4
15  
15  
15  
30  
25  
60  
W
t
8
d(on)  
t
r
10  
20  
15  
40  
V
= 75 V, R = 75 W  
L
DD  
ns  
ns  
I
^ 1 A, V  
= 10 V, R = 6 W  
D
GEN G  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 1.7 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
4.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
GS  
= 10 thru 5 V  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 125_C  
25_C  
C
4 V  
3 V  
−55_C  
0.0  
0.5  
1.0  
DS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
V
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
2
Si3440DV  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.5  
320  
240  
160  
80  
C
iss  
0.4  
V
GS  
= 6.0 V  
0.3  
0.2  
0.1  
0.0  
V
GS  
= 10 V  
C
rss  
C
oss  
0
0
1
2
3
4
0
10  
20  
30  
40  
50  
60  
70  
80  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.5  
2.0  
1.5  
1.0  
0.5  
V
D
= 75 V  
V
= 10 V  
DS  
GS  
I
= 1.5 A  
I = 1.5 A  
D
6
4
2
0
0
1
2
3
4
5
6
−50 −25  
0
25  
50  
75  
100 125 150  
Q
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
10  
I
= 1.5 A  
D
T
= 150_C  
J
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
3
Si3440DV  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.8  
30  
25  
0.4  
I
D
= 250 mA  
20  
0.0  
−0.4  
−0.8  
−1.2  
15  
10  
5
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
I
Limited  
DM  
P(t) = 0.0001  
r
Limited  
DS(on)  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
P(t) = 10  
dc  
T
A
= 25_C  
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 90_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
4
Si3440DV  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
5

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