SI3447BDV-T1-E3 [VISHAY]
P-Channel 12-V (D-S) MOSFET; P通道12 -V （D -S ）的MOSFET
| 型号： | SI3447BDV-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 12-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3447BDV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra Low On-Resistance
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.040 @ V = −4.5 V
−6.0
−5.2
−4.5
GS
D Load Switch
D PA Switch
−12
0.053 @ V = −2.5
V
V
GS
0.072 @ V = −1.8
GS
(4) S
TSOP-6
Top View
1
2
3
6
5
(3) G
3 mm
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3447BDV-T1
P-Channel MOSFET
Si3447BDV-T1—E3 (Lead Free)
Marking Code:
B7xxx
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−12
DS
V
V
GS
"8
T
= 25_C
= 85_C
−4.5
−3.3
−6.0
−4.3
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
Continuous Diode Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
0.6
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
50
90
30
62.5
110
36
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
www.vishay.com
1
Si3447BDV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.45
1
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= −12 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −12 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
−20
A
D(on)
GS
V
= −4.5 V, I = −6.0 A
0.033
0.044
0.060
0.040
0.053
0.072
GS
D
a
V
= −2.5 V, I = −5.2 A
Drain-Source On-State Resistance
r
W
GS
D
DS(on)
V
= −1.8 V, I = −2.0 A
GS
D
a
Forward Transconductance
g
15
S
V
V
= −5 V, I = −6.0 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −1.7 A, V = 0 V
−0.7
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
9.3
1.5
2.6
20
46
62
62
40
14
g
Q
Q
V
= −6 V, V = −4.5 V, I = −6.0 A
nC
ns
gs
gd
DS
GS
D
t
30
70
95
95
80
d(on)
t
r
V
= −6 V, R = 6 W
L
GEN g
DD
I
^ −1 A, V
= −4.5 V, R = 6 W
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −1.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
T
= −55_C
25_C
C
V
GS
= 5 thru 2.5 V
16
12
8
2 V
125_C
1.5 V
4
4
1 V
0
0
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
www.vishay.com
2
Si3447BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.20
1600
1400
1200
1000
800
600
400
200
0
0.16
0.12
C
iss
V
GS
= 1.8 V
0.08
0.04
0.00
V
GS
= 2.5 V
C
oss
C
rss
V
= 4.5 V
16
GS
0
4
8
12
20
0
2
4
6
8
10
12
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
D
= 6 V
V
= 4.5 V
DS
GS
I
= 6 A
I = 6 A
D
0
2
4
6
8
10
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
40
10
T
= 150_C
J
I
D
= 6 A
T
= 25_C
I
D
= 2 A
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
www.vishay.com
3
Si3447BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
0.3
I
D
= 100 mA
0.2
0.1
30
20
0.0
10
0
−0.1
−0.2
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
www.vishay.com
4
Si3447BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
www.vishay.com
5
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