SI3455ADV-T1 [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI3455ADV-T1 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3455ADV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.100 @ V = −10 V
−3.5
−2.7
GS
−30
0.170 @ V = −4.5
V
GS
TSOP-6
Top View
(4) S
1
2
3
6
5
3 mm
(3) G
4
2.85 mm
Ordering Information: Si3455ADV-T1
Si3455ADV-T1—E3 (Lead Free)
(1, 2, 5, 6) D
P-Channel MOSFET
Marking Code:
A5xxx
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"20
T
= 25_C
= 70_C
−2.7
−2.1
−3.5
−2.8
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
Continuous Source Current (Diode Conduction)
I
−1.7
2.0
−0.95
1.14
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.73
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
50
90
30
62.5
110
36
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
www.vishay.com
1
Si3455ADV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −10 V
−20
A
D(on)
GS
V
= −10 V, I = −3.5 A
0.080
0.140
0.100
0.170
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −2.7 A
GS
D
a
Forward Transconductance
g
6
S
V
V
= −15 V, I = −3.5 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1.7 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
8.5
2.2
1.5
10
7
13
g
Q
Q
V
= −15 V, V = −10 V, I = −3.5 A
nC
ns
gs
gd
DS
GS
D
t
20
15
35
20
60
d(on)
t
r
V
= −15 V, R = 15 W
L
= −10 V, R = 6 W
GEN g
DD
I
D
^ −1 A, V
Turn-Off Delay Time
Fall Time
t
20
10
30
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = −1.7 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 10 thru 7 V
T
= −55_C
C
6 V
5 V
16
12
8
25_C
125_C
4 V
3 V
4
4
0
0
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
7
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
www.vishay.com
2
Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
700
600
500
400
300
200
100
0
0.30
C
iss
0.24
V
GS
= 4.5 V
0.18
0.12
0.06
0.00
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 3.5 A
I = 3.5 A
D
6
4
2
0
0
3
6
9
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
0.24
0.18
0.12
0.06
0.00
20
10
T
= 150_C
J
I
D
= 3.5 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
www.vishay.com
3
Si3455ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
30
25
0.6
I
D
= 250 mA
20
15
0.4
0.2
10
5
0.0
−0.2
−0.4
0
10
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
www.vishay.com
4
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