SI3456BDV-T1-E3 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI3456BDV-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3456BDV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
0.035 @ V = 10 V
6.0
4.9
GS
30
0.052 @ V = 4.5 V
GS
(1, 2, 5, 6) D
TSOP-6
Top View
1
2
3
6
5
3 mm
(3) G
4
2.85 mm
(4) S
Ordering Information: Si3456BDV-T1—E3
Marking Code: 6Bxxx
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
T
= 25_C
= 70_C
6.0
4.8
4.5
3.6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
"30
DM
a
Continuous Source Current (Diode Conduction)
I
1.7
2.0
1.3
0.9
1.1
0.7
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
55
92
28
62.5
110
40
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
1
Si3456BDV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3.0
"100
1
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 30 V, V = 0 V, T = 55_C
5
GS
J
a
On-State Drain Current
I
30
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.028
0.035
0.052
V
= 10 V, I = 6 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 4.5 V, I = 4.9 A
0.041
12
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 6 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 1.7 A, V = 0 V
0.8
1.2
13
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
8.6
1.8
1.5
2.8
10
g
Q
Q
V
= 15 V, V = 10 V, I = 6 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
1.4
4.8
15
25
40
15
40
W
t
d(on)
t
r
15
V
DD
= 15 V, R = 15 W
L
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN g
Turn-Off Delay Time
Fall Time
t
25
ns
d(off)
t
f
10
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
20
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
35
30
25
20
15
10
5
V
GS
= 10 thru 6 V
T
= −55_C
C
35
30
25
20
15
10
5
5 V
25_C
125_C
4 V
3 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
2
Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.10
800
700
600
500
400
300
200
100
0
0.08
0.06
C
iss
V
GS
= 4.5 V
0.04
0.02
0.00
V
GS
= 10 V
C
oss
C
5
rss
0
5
10
15
20
25
30
35
40
0
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 6 A
I = 6 A
D
6
4
2
0
0
2
4
6
8
10
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
10
T
= 150_C
J
I
D
= 6 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
3
Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
0.2
I
D
= 250 mA
−0.0
−0.2
−0.4
−0.6
−0.8
30
20
10
0
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
I
Limited
DM
r
Limited
DS(on)
10
1
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25_C
A
0.1
Single Pulse
P(t) = 10
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 92_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
4
Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
www.vishay.com
5
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