SI3495DV_08 [VISHAY]
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET; P通道20 - V（D -S）， 1.5 - V（G -S）的MOSFET
| 型号： | SI3495DV_08 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET |
| 文件： | 总6页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si3495DV
Vishay Siliconix
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET: 1.5 V Rated
VDS (V)
rDS(on) (Ω)
ID (A)
- 7
Ultra-Low On-Resistance
100 % Rg Tested
0.024 at VGS = - 4.5 V
0.030 at VGS = - 2.5 V
0.038 at VGS = - 1.8 V
0.048 at VGS = - 1.5 V
RoHS
- 6.2
- 5.2
- 5.0
COMPLIANT
- 20
APPLICATIONS
•
Load Switch and PA Switch for Portable
Devices
TSOP-6
Top View
(4) S
1
2
3
6
5
3 mm
(3) G
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information:
Marking Code:
Si3495DV-T1-E3 (Lead (Pb)-free)
95xxx
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 sec
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
5
V
VGS
TA = 25 °C
TA = 85 °C
- 7
- 5.3
- 3.9
Continuous Drain Current (TJ = 150 °C)a
ID
- 3.6
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
- 20
- 1.7
2.0
- 0.9
1.1
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
W
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
45
Maximum
62.5
Unit
t ≤ 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
90
110
°C/W
RthJF
25
30
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
www.vishay.com
1
New Product
Si3495DV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.35
- 0.75
100
- 1
V
VDS = 0 V, VGS
=
5 V
Gate-Body Leakage
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 7 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
ID(on)
- 20
0.020
0.024
0.030
0.036
25
0.024
0.030
0.038
0.048
V
V
GS = - 2.5 V, ID = - 6.2 A
GS = - 1.8 V, ID = - 5.2 A
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = - 1.5 V, ID = - 3 A
VDS = - 5 V, ID = - 7 A
IS = - 1.7 A, VGS = 0 V
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
S
V
VSD
- 0.62
- 1.1
38
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
25
2.5
7
VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A
nC
4
8.5
19
13
30
Ω
td(on)
tr
td(off)
tf
36
55
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
200
106
35
300
160
60
ns
trr
IF = - 1.7 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
20
16
12
8
V
GS
= 5 thru 2 V
1.5 V
T
= 125 °C
C
4
4
25 °C
1 V
- 55 °C
1.2
0
0
0.0
0
1
2
3
4
5
0.4
0.8
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 73135
S-71321-Rev. B, 02-Jul-07
New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3500
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
C
iss
V
GS
V
GS
V
GS
= 1.8 V
= 2.5 V
= 4.5 V
V
GS
= 1.5 V
0.04
0.02
0.00
C
oss
C
rss
0
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
-
Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.8
1.4
V
D
= 4.5 V
GS
= 7 A
V
D
= 10 V
DS
= 7 A
I
I
1.2
1.0
0.8
0.6
- 50 - 25
0
25
50
75
100 125 150
0
4
8
12
16
20
24
28
32
T - Junction Temperature (°C)
J
Q
-
Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 7 A
T
= 150 °C
J
T
= 25 °C
J
1
0.1
0.0
0.2
0.4
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
-
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
www.vishay.com
3
New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
40
32
0.3
I
D
= 250 µA
0.2
0.1
24
16
T
A
= 25 °C
0.0
8
0
- 0.1
- 0.2
-2
-1
10
10
1
10
100
600
- 50 - 25
0
25
50
75
100 125 150
Time (sec)
T
- Temperature (°C)
J
Single Pulse Power
Threshold Voltage
100
*r
DS(on)
Limited
I
Limited
DM
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
1
P(t) = 0.1
P(t) = 1
P(t) = 10
0.1
T
= 25 °C
C
Single Pulse
dc
BV
DSS
Limited
0.01
0.1
1
10
Drain-to-Source Voltage (V)
> minimum V
at which r is specified
100
V
DS
-
*V
GS
GS
DS(on)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 360 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
-3
10
-1
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73135
S-71321-Rev. B, 02-Jul-07
New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73135.
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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