SI3861DV [VISHAY]
Peripheral Driver, 1 Driver, MOS, PDSO6,;
| 型号： | SI3861DV |
| 厂家： | 
VISHAY |
| 描述： | Peripheral Driver, 1 Driver, MOS, PDSO6, 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3861DV
Vishay Siliconix
New Product
Load Switch with Level-Shift
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
ID (A)
0.105 @ V = 10 V
"2.3
"1.9
"1.7
IN
0.150 @ V = 5.0 V
IN
4.5 to 20
0.175 @ V = 4.5 V
IN
4.5ĆV Rated
FEATURES
D 105-mW Low rDS(on) TrenchFETt
D 4.5 to 20-V Input
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
D 1.5 to 8 -V Logic Level Control
DESCRIPTION
The Si3861DV includes a p- and n-channel MOSFET in a
single TSORP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Switching Variation
Si3861DV
R2 @ V = 5 V, R1 = 20 kW
IN
20
16
12
8
2, 3
t
4
f
V
OUT
V
IN
Q2
I
V
= 1 A
ON/OFF
L
R1
C1
= 3 V
C = 10 mF
C
i
6
5
6
= 1 mF
o
t
d(off)
ON/OFF
LOAD
C
o
t
r
Q1
4
t
d(on)
C
i
1
0
0
2
4
6
8
10
R2
R2 (kW)
GND
R2
Note: For R2 switching variations with other V /R1
IN
combinations See Typical Characteristics
The Si3861DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
Typical 1000 pF
Optional Slew-Rate Control
Optional Slew-Rate Control
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si3861DV
New Product
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3861DV
TSOP-6
Top View
4
2, 3
6
D2
S2
Q2
R2
D2
D2
R1, C1
ON/OFF
S2
1
2
3
6
5
R1, C1
Q1
5
4
ON/OFF
1
R2
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Input Voltage
V
20
IN
V
ON/OFF Voltage
V
8
"2.3
"4
ON/OFF
a, b
Continuous
Load Current
I
L
b, c
Pulsed
A
a
Continuous Intrinsic Diode Conduction
I
S
–1
a
Maximum Power Dissipation
P
0.83
–55 to 150
3
W
_C
kV
D
Operating Junction and Storage Temperature Range
T , T
J
stg
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W)
ESD
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
a
Maximum Junction-to-Ambient (continuous current)
R
120
35
150
50
thJA
thJC
_C/W
Maximum Junction-to-Foot (Q2)
R
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
V
IN
= 30 V, V = 0 V
ON/OFF
1
mA
FL
V
I
S
= –1 A
–0.8
–1
V
SD
ON Characteristics
Input Voltage Range
V
IN
4.5
20
V
V
= 10 V
0.085
0.123
0.145
0.105
0.150
0.175
IN
V
= 1.5 V
= 1 A
ON/OFF
V
IN
= 5.0 V
= 4.5 V
On-Resistance (p-channel) @ 1 A
On-State (p-channel) Drain-Current
r
W
DS(on)
I
D
V
IN
V
v 0.2 V, V = 10 V, V
= 1.5 V
ON/OFF
= 1.5 V
ON/OFF
1
1
IN-OUT
IN
I
A
D(on)
V
v 0.3 V, V = 5 V, V
IN-OUT
IN
Notes
a. Surface Mounted on FR4 Board.
b.
V
= 12, V
= 8 V, T = 25_C.
IN
ON/OFF
A
c. Pulse test: pulse width v300 ms, duty cycle v2%.
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si3861DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
V
vs. I @ V = 10 V
V
vs. I @ V = 5 V
DROP
L
IN
DROP
L
IN
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 1.5 to 8 V
V
= 1.5 to 8 V
ON/OFF
ON/OFF
T = 125_C
T = 125_C
J
J
T = 25_C
J
T = 25_C
J
0
1
2
3
4
5
0
0
0
1
2
3
4
5
I
– (A)
I – (A)
L
L
V
vs. I @ V = 4.5 V
V
vs. V @ I = 1 A
DROP
L
IN
DROP
IN
L
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
I
L
= 1 A
ON/OFF
V
= 1.5 to 8 V
T = 125_C
J
T = 25_C
J
T = 125_C
J
V
= 1.5 to 8 V
ON/OFF
T = 25_C
J
2
4
6
8
10
0
1
2
3
4
5
I
– (A)
V
IN
(V)
L
V
Variance vs. Junction Temperature
On-Resistance vs. Input Voltage
DROP
0.08
0.06
1.0
0.8
0.6
0.4
0.2
0
I
L
= 1 A
ON/OFF
I
L
= 1 A
ON/OFF
V
= 1.5 to 8 V
V
= 1.5 to 8 V
0.04
V
= 5 V
IN
0.02
V
IN
= 10 V
0.00
T = 125_C
J
–0.02
–0.04
T = 25_C
J
–50 –25
0
25
50
75
100 125 150
2
4
6
8
10
T – Junction Temperature (_C)
J
V
IN
(V)
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si3861DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Normalized On-Resistance
Switching Variation
R2 @ V = 10 V, R1 = 20 kW
vs. Junction Temperature
IN
40
32
24
16
8
1.8
I
V
= 1 A
ON/OFF
I
V
= 1 A
ON/OFF
L
L
= 1.5 to 8 V
= 3 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
C = 10 mF
V
IN
= 10 V
i
o
C
= 1 mF
t
f
V
IN
= 5 V
t
d(off)
t
r
t
d(on)
0
0
0
0
2
4
6
8
10
–50 –25
0
25
50
75
100 125 150
T – Junction Temperature (_C)
J
R2 (kW)
Switching Variation
Switching Variation
R2 @ V = 4.5 V, R1 = 20 kW
R2 @ V = 5 V, R1 = 20 kW
IN
IN
20
50
40
30
20
10
0
I
V
= 1 A
ON/OFF
C = 10 mF
L
t
f
= 3 V
16
12
8
i
o
C
= 1 mF
I
V
= 1 A
ON/OFF
L
= 3 V
t
r
C = 10 mF
C
i
= 1 mF
o
t
d(off)
t
f
t
r
4
t
d(on)
t
d(off)
t
d(on)
0
0
2
4
6
8
10
2
4
6
8
10
R2 (kW)
R2 (kW)
Switching Variation
R2 @ V = 10 V, R1 = 300 kW
Switching Variation
R2 @ V = 5 V, R1 = 300 kW
IN
IN
200
160
120
80
400
320
240
160
80
I
V
= 1 A
ON/OFF
C = 10 mF
I
V
= 1 A
ON/OFF
L
L
= 3 V
= 3 V
C = 10 mF
t
d(off)
i
o
i
C
= 1 mF
C
= 1 mF
o
t
f
t
d(off)
t
f
t
d(on)
t
r
t
r
40
t
d(on)
0
0
20
40
60
80
100
0
20
40
R2 (kW)
60
80
100
R2 (kW)
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-4
Si3861DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Switching Variation
R2 @ V = 4.5 V, R1 = 300 kW
IN
150
120
90
60
30
0
t
f
t
d(off)
I
V
= 1 A
ON/OFF
L
= 3 V
C = 10 mF
i
o
t
C
= 1 mF
r
t
d(on)
0
20
40
60
R2 (kW)
80
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 150_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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