关闭背景特效

SI3900DV-T1-E3 [VISHAY]

Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6;

SI3900DV-T1-E3


元器件型号：	SI3900DV-T1-E3
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 光电二极管晶体管
PDF文件：	总9页 (文件大小：208K)
下载文档：	下载PDF数据表文档文件
型号参数：SI3900DV-T1-E3参数

SI3900DV-T1-GE3

Dual N-Channel 20-V (D-S) MOSFET

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15 VISHAY

SI3900DV-T1-GE3

Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

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0 VISHAY

SI3900M100

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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11 NTE

SI3900M16

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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6 NTE

SI3900M160

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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13 NTE

SI3900M200

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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9 NTE

SI3900M25

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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6 NTE

SI3900M250

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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8 NTE

SI3900M35

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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7 NTE

SI3900M450

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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10 NTE

SI3900M50

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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7 NTE

SI3900M63

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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4 NTE

SI3900M80

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC

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10 NTE

SI3905DV

Dual P-Channel 8-V (D-S) MOSFET

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15 VISHAY

SI3905DV

Dual P-Channel 8-V (D-S) MOSFET

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11 VISHAY

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