SI3909DV-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6;
| 型号： | SI3909DV-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3909DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
1.8
Definition
0.200 at VGS = - 4.5 V
0.235 at VGS = - 3.6 V
0.340 at VGS = - 2.5 V
•
•
TrenchFET® Power MOSFETs: 2.5 V Rated
Compliant to RoHS Directive 2002/95/EC
- 20
1.6
1.3
TSOP-6
Top View
S
1
S
2
G1
S2
G2
D1
S1
D2
1
2
3
6
5
3 mm
G
1
G
2
4
2.85 mm
D
1
D
2
Ordering Information: Si3909DV-T1-E3 (Lead (Pb)-free)
Si3909DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
12
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TA = 25 °C
TA = 70 °C
1.8
Continuous Drain Current (TJ = 150 °C)a, b
ID
1.2
A
IDM
IS
Pulsed Drain Current
7
Continuous Diode Current (Diode Conduction)a, b
- 1.05
1.15
0.73
TA = 25 °C
Maximum Power Dissipationa, b
PD
W
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
93
Maximum
110
Unit
t ≤ 5 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
RthJA
Steady State
Steady State
130
75
150
°C/W
RthJL
90
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
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1
Si3909DV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.5
V
VDS = 0 V, VGS
=
12 V
Gate-Body Leakage
100
- 1
nA
VDS = - 16 V, VGS = 0 V
DS = - 16 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.8 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
ID(on)
- 5
0.160
0.190
0.280
3.6
0.200
0.235
0.340
Drain-Source On-State Resistancea
RDS(on)
V
GS = - 3.6 V, ID = - 1.6 A
GS = - 2.5 V, ID = - 1 A
Ω
V
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 10 V, ID = - 1.8 A
IS = - 1.05 A, VGS = 0 V
S
V
VSD
- 0.83
- 1.1
4.0
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
2.7
0.4
0.6
11
34
19
24
20
V
DS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
ns
17
50
30
36
40
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
trr
IF = - 1.05 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
6
4
2
0
10
V
GS
= 4.5 V thru 4 V
T
= - 55 °C
C
3.5 V
8
6
4
2
0
25 °C
125 °C
3 V
2.5 V
2 V
1.5 V
4
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
450
360
270
180
90
C
iss
V
GS
= 2.5 V
V
GS
= 3.6 V
C
oss
V
GS
= 4.5 V
C
rss
0
0
1
2
3
4
5
6
7
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
4.5
3.6
2.7
1.8
0.9
0
V
I
= 10 V
= 1.8 A
V
= 10 V
= 1.8 A
GS
D
DS
I
D
- 50 - 25
0
25
50
75
100 125 150
0
0.6
1.2
1.8
2.4
3.0
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
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Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
0.5
0.4
0.3
0.2
0.1
0
10
I
D
= 1.8 A
I
D
= 1.2 A
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0
1
2
3
4
5
0
0.3
V
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
8
6
I
D
= 250 µA
0.2
4
2
0
0.0
- 0.2
- 0.4
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T - Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70968.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
5
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SI3909DV-T1-GE3
Small Signal Field-Effect Transistor, 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
VISHAY
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