SI3911DV [VISHAY]
Dual P-Channel 20-V (D-S) MOSFET; 双P通道20 - V（D -S）的MOSFET
| 型号： | SI3911DV |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3911DV
Vishay Siliconix
New Product
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.145 @ V = –4.5 V
–2.2
–1.8
–1.5
GS
–20
0.200 @ V = –2.5
V
V
GS
0.300 @ V = –1.8
GS
S
S
2
1
TSOP-6
Top View
G1
S2
G2
D1
S1
D2
1
2
3
6
5
G
1
G
2
3 mm
4
D
1
D
2
2.85 mm
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–20
DS
GS
V
V
"8
T
= 25_C
= 70_C
–1.8
–1.5
–2.2
–1.8
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
"8
a
Continuous Diode Current (Diode Conduction)
I
–1.05
1.15
0.73
–0.75
0.83
0.53
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
93
130
90
110
150
90
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
1
Si3911DV
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–0.45
V
GS(th)
DS
GS D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= –16 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= –16 V, V = 0 V, T = 85_C
–10
DS
GS
J
a
On-State Drain Current
I
V
= –5 V, V = –4.5 V
–5
A
D(on)
DS
GS
V
= –4.5 V, I = –2.2 A
0.115
0.163
0.240
0.145
0.200
0.300
GS
D
a
V
= –2.5 V, I = –1.8 A
Drain-Source On-State Resistance
r
W
GS
GS
D
DS(on)
V
= –1.8 V, I = –1.0 A
D
a
Forward Transconductance
g
5
S
V
V
= –5 V, I = –2.2 A
fs
DS
D
a
Diode Forward Voltage
V
I
S
= –1.05 A, V = 0 V
–0.8
–1.1
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
5
1
7.5
g
Q
gs
Q
gd
V
= –10 V, V = –4.5 V, I = –2.2 A
nC
ns
DS
GS
D
0.9
12
29
24
30
20
t
20
50
45
50
40
d(on)
t
r
V
= –4 V, R = 8 W
L
DD
I
D
^ –1 A, V = –4.5 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –1.05 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8
10
8
T
C
= –55_C
V
= 4.5 thru 2.5 V
GS
6
4
2
0
25_C
6
125_C
2 V
4
2
1.5 V
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
DS
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
2
Si3911DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.75
600
500
400
300
200
100
0
0.60
0.45
C
iss
V
= 1.8 V
GS
0.30
0.15
0.00
V
= 2.5 V
GS
C
oss
V
= 4.5 V
GS
6
C
rss
0
2
4
8
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 2.2 A
V
= 4.5 V
GS
DS
I
D
I = 2.2 A
D
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
0.2
0.1
0.0
10
T
J
= 150_C
1
I
D
= 2.2 A
T
J
= 25_C
0.1
0
1
2
3
– Gate-to-Source Voltage (V)
GS
4
5
0.00
0.3
0.6
0.9
1.2
1.5
V
– Source-to-Drain Voltage (V)
V
SD
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
3
Si3911DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
0.4
8
6
0.3
0.2
I
D
= 250 mA
0.1
0.0
4
2
–0.1
–0.2
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 130_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
www.vishay.com
4
相关型号：
SI3911DV-E3
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3911DV-T1-GE3
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3911DV-T2-E3
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3911DV-T3
TRANSISTOR 1800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明