SI4166DY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4166DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si4166DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
30.5
TrenchFET® Power MOSFET
RoHS
0.0039 at VGS = 10 V
0.0055 at VGS = 4.5 V
• 100 % R and UIS Tested
COMPLIANT
g
30
21.5 nC
25.6
APPLICATIONS
•
Low-Side DC/DC Conversion
- Notebook PC
- Gaming
SO-8
D
S
D
D
D
D
1
2
3
4
8
7
6
5
S
S
G
G
Top View
S
N-Channel MOSFET
Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
30
Unit
V
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
30.5
24.5
20.5b, c
16.5b, c
70
Continuous Drain Current (TJ = 150 °C)
ID
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
5.9
2.7b, c
30
Continuous Source-Drain Diode Current
T
A = 25 °C
L = 0.1 mH
C = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
mJ
W
45
T
6.5
TC = 70 °C
A = 25 °C
TA = 70 °C
4.2
PD
Maximum Power Dissipation
3.0b, c
1.9b, c
T
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
34
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
41
19
°C/W
15
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
www.vishay.com
1
New Product
Si4166DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
31
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 5.4
VDS = VGS , ID = 250 µA
1.2
30
2.4
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
0.0032
0.0045
65
0.0039
0.0055
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
VDS = 15 V, ID = 15 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2730
540
205
42.5
21.5
6.9
7.1
0.8
30
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
VDS = 15 V, VGS = 10 V, ID = 10 A
65
33
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
0.2
1.6
50
35
60
30
24
18
50
18
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
19
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
35
15
ns
Turn-On Delay Time
Rise Time
12
9
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
29
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
5.9
70
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.74
28
1.1
55
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
21
42
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
15
ns
tb
13
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
New Product
Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
70
V
GS
= 10 thru 4 V
56
42
28
14
0
6
V
GS
= 3 V
T
C
= 25 °C
4
2
T
C
= 125 °C
1
T
= - 55 °C
4
C
0
0
2
3
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3500
2800
2100
1400
700
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
C
iss
V
= 4.5 V
GS
C
oss
V
GS
= 10 V
28
C
rss
0
0
6
12
18
24
30
0
14
42
56
70
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 10 A
D
I
= 15 A
D
V
GS
= 10 V
6
V
GS
= 4.5 V
V
DS
= 10 V
V
= 15 V
DS
4
V
DS
= 20 V
2
0
0
9
18
27
36
45
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
www.vishay.com
3
New Product
Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.020
I
= 15 A
D
0.016
0.012
0.008
0.004
0.000
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
250
200
150
100
50
0.0
- 0.2
- 0.4
- 0.6
- 0.8
I
= 5 mA
D
I
= 250 µA
D
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
New Product
Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8.0
6.4
4.8
3.2
1.6
0.0
35
28
21
14
7
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
2.0
Power Derating, Junction-to-Foot
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
www.vishay.com
5
New Product
Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68953.
www.vishay.com
6
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI4166DY-T1-GE3
Small Signal Field-Effect Transistor, 20.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
SI4170DY-T1-GE3
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8
VISHAY
SI4176DY-T1-E3
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
VISHAY
SI4176DY-T1-GE3
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
©2020 ICPDF网 联系我们和版权申明