SI4300DY-T1 [VISHAY]
TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal;
| 型号： | SI4300DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4300DY
Vishay Siliconix
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFET
D LITTLE FOOT Plust Integrated Schottky
D PWM Optimized
0.0185 @ V = 10 V
9
7
GS
30
0.033 @ V = 4.5 V
GS
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
D Low Power Sychronous Rectification
VSD (v)
Diode Forward Voltage
VDS (V)
IF (A)
30
0.5 V @ 1 A
2.0
SO-8
D
K
S/A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
S/A
S/A
G
Schottky Diode
G
N-Channel MOSFET
Top View
Ordering Information: Si4300DY
S
A
Si4300DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
30
30
DS
DA
GS
Reverse Voltage (Schottky)
Gate-Source Voltage
V
V
V
"20
T
= 25_C
= 70_C
9
7
6.4
5.1
A
Continuous Drain Current (T = 150_C)
J
I
D
a
(MOSFET)
T
A
Pulsed Drain Current (MOSFET)
I
I
40
20
DM
A
a
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
S
2.3
2.3
1.25
1.25
I
F
Pulsed Foward Current (Schottky)
FM
T
= 25_C
2.5
1.6
2.2
1.4
1.38
0.88
1.25
0.80
A
a
Maximum Power Dissipation (MOSFET)
T
A
= 70_C
= 25_C
= 70_C
P
W
D
T
A
a
Maximum Power Dissipation (Schottky)
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
40
70
18
50
90
23
45
78
25
55
100
30
a
Maximum Junction-to-Ambient
R
thJA
thJF
Steady-State
Steady-State
_C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
Si4300DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
"100
100
nA
GSS
GS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 85_C
2000
GS
J
b
On-State Drain Current
I
V
5 V, V = 10 V
30
A
w
D(on)
DS
GS
V
= 10 V, I = 9 A
0.0155
0.0275
16
0.0185
0.033
GS
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 7 A
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 9 A
S
V
DS
D
b
Schottky Diode Forward Voltage
V
SD
I
S
= 1.0 A, V = 0 V
0.47
0.5
13
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
8.7
2.25
4.2
g
Q
Q
V
= 15 V, V = 5 V, I = 9 A
nC
gs
gd
DS
GS
D
R
g
0.5
2.7
16
15
30
15
60
W
t
11
8
d(on)
t
r
V
DD
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
22
9
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.3 A, di/dt = 100 A/ms
32
F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 1.0 A
0.47
0.36
0.004
0.7
0.5
0.42
0.100
10
F
Forward Voltage Drop
V
V
F
I
= 1.0 A, T = 125_C
F
J
V = 24 V
r
V = 24 V, T = 100_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = -24 V, T = 125_C
3.0
20
r
J
V = 10 V
r
C
50
T
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-2
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 5 V
32
24
16
8
4 V
T
= 125_C
C
3 V
25_C
-55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1200
1000
800
600
400
200
0
0.15
0.12
0.09
0.06
0.03
0.00
C
C
iss
oss
V
GS
= 4.5 V
V
GS
= 10 V
C
rss
0
8
16
24
32
40
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 9 A
V
= 10 V
GS
= 9 A
DS
D
I
D
6
4
2
0
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
50
10
0.16
0.12
0.08
0.04
0.00
I
D
= 9 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.4
30
25
I
D
= 250 mA
0.2
20
15
10
5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-4
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T
= 150_C
J
1
30 V
0.1
T
= 25_C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
- Temperature (_C)
V - Forward Voltage Drop (V)
F
J
Capacitance
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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