SI4390DY [VISHAY]
N-Channel Qg, Fast Switching WFET; N沟道的Qg ，快速切换WFET
| 型号： | SI4390DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Qg, Fast Switching WFET |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4390DY
Vishay Siliconix
New Product
N-Channel Qg, Fast Switching WFETt
FEATURES
D Extremely Low Qgd WFET Technology for
Switching Losses
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.0095 @ V = 10 V
12.5
10.5
D High-Side DC/DC Conversion
GS
30
-
-
Notebook
Server
0.0135 @ V = 4.5 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
N-Channel MOSFET
Top View
Ordering Information: Si4390DY
Si4390DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
12.5
10
8.5
6.8
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
A
Pulsed Drain Current
I
20
DM
a
Continuous Source Current (Diode Conduction)
I
2.7
3.0
1.9
1.3
1.4
0.9
S
T
A
= 25_C
= 70_C
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
32
68
15
42
90
20
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
1
Si4390DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
2.8
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0075
0.0095
0.0135
V
V
= 10 V, I = 12.5 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
= 4.5 V, I = 10.5 A
0.0105
38
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 12.5 A
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 2.7 A, V = 0 V
0.7
1.1
15
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
10
3.5
2.1
0.8
16
6
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 12.5 A
nC
DS
GS
D
R
g
W
t
30
12
70
25
60
d(on)
t
r
V
= 15 V, R = 15 W
L
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
43
14
35
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 4 V
GS
40
30
20
10
0
3 V
T
C
= 125_C
25_C
-55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
DS
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
2
Si4390DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
1800
1500
1200
900
600
300
0
C
iss
0.024
0.018
V
= 4.5 V
= 10 V
GS
C
oss
0.012
0.006
0.000
V
GS
C
rss
0
10
20
30
40
50
15
1.2
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 12.5 A
V
D
= 10 V
GS
I = 12.5 A
DS
I
D
0
3
6
9
12
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.040
0.032
0.024
0.016
0.008
0.000
50
10
T = 150_C
J
I
D
= 12.5 A
1
T = 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
3
Si4390DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
200
160
0.4
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
120
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by
r
DS(on)
1 ms
10
10 ms
1
100 ms
1 s
10 s
dc
0.1
T
= 25_C
C
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
4
Si4390DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
5
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