SI4410BDY-E3 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI4410BDY-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4410BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
APPLICATIONS
Pb-free
Available
0.0135 @ V = 10 V
10
8
GS
30
0.020 @ V = 4.5 V
GS
D Battery Switch
D Load Switch
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
Ordering Information: Si4410BDY
Si4410BDY—T1 (with Tape and Reel)
Si4410BDY—E3 (Lead (Pb)-Free)
Si4410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
30
V
"20
T
= 25_C
= 70_C
10
8
7.5
6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
50
DM
a
Continuous Source Current (Diode Conduction)
I
2.3
2.5
1.6
1.26
1.4
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.9
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
70
25
50
90
30
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
www.vishay.com
1
Si4410BDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 30 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 30 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
20
A
V
DS
w 5 V, V = 10 V
D(on)
GS
0.011
0.0135
0.020
V
= 10 V, I = 10 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 5 A
0.0165
25
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 2.3 A, V = 0 V
0.76
1.1
GS
Dynamicb
Gate Charge
Q
V
= 15 V, V = 5 V, I = 10 A
13
20
40
g
DS
GS
D
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
25
5.5
3.7
1.6
10
10
40
15
35
gt
gs
gd
nC
Q
Q
V
DS
= 15 V, V = 10 V, I = 10 A
GS D
R
g
f = 1 MHz
0.5
2.7
15
15
60
25
70
W
t
t
d(on)
t
r
V
= 25 V, R = 25 W
L
GEN G
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 thru 5 V
4 V
T
C
= 125_C
25_C
2 V
3 V
−55_C
0.0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
www.vishay.com
2
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
2000
1600
1200
800
400
0
C
iss
0.025
0.020
V
GS
= 4.5 V
0.015
0.010
0.005
0.000
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.6
1.2
0.8
0.4
0.0
V
D
= 15 V
V
= 10 V
DS
GS
I
= 10 A
I = 10 A
D
6
4
2
0
0
5
10
15
20
25
−50 −25
0
25
50
75
100 125 150
T
J
− Junction Temperature (_C)
Q
g
− Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
50
T
J
= 150_C
I
D
= 10 A
10
T
J
= 25_C
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
www.vishay.com
3
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
50
40
0.4
0.2
I
D
= 250 mA
0.0
30
20
10
0
T
A
= 25_C
−0.2
−0.4
−0.6
−0.8
−1.0
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
Safe Operating Area, Junction-to-Case
100
*r
DS(on)
Limited
100 ms, 10 ms
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
T
= 25_C
A
Single Pulse
dc, 100 s
0.01
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
GS
GS
DS(on)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
www.vishay.com
4
Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72211.
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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