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SI4416DY-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SI4416DY-E3
型号： SI4416DY-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Si4416DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.018 @ V = 10 V  
"9.0  
"7.3  
GS  
30  
0.028 @ V = 4.5 V  
GS  
D
D
D
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
"9.0  
"7.2  
"50  
2.1  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 70_C  
2.5  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
50  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70752  
S-56945—Rev. C, 23-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-1  
Si4416DY  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
1
nA  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 24 V, V = 0 V, T = 55_C  
25  
GS  
J
a
On-State Drain Current  
I
20  
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.014  
0.018  
0.028  
V
= 10 V, I = 9.0 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
V
I
= 4.5 V, I = 7.3 A  
0.021  
27  
GS  
D
a
Forward Transconductance  
g
fs  
= 15 V, I = 9.0 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
= 2.1 A, V = 0 V  
1.2  
S
GS  
Dynamicb  
Gate Charge  
Q
V
= 15 V, V = 5 V, I = 9.0 A  
13  
24  
6
20  
35  
g
DS  
GS  
D
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
gt  
nC  
ns  
Q
V
= 15 V, V = 10 V, I = 9.0 A  
gs  
gd  
DS GS D  
Q
4
t
t
12  
10  
32  
11  
50  
20  
20  
50  
20  
90  
d(on)  
t
r
V
DD  
= 15 V, R = 15 W  
L
I
D
^ 1 A, V = 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.1 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 70752  
S-56945—Rev. C, 23-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-2  
Si4416DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 5 V  
40  
30  
20  
10  
0
4 V  
T
C
= 125_C  
25_C  
3 V  
–55_C  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
DS  
On-Resistance vs. Drain Current  
Capacitance  
0.10  
0.08  
0.06  
0.04  
0.02  
0
2500  
2000  
1500  
1000  
500  
C
iss  
V
= 4.5 V  
C
oss  
GS  
V
= 10 V  
GS  
C
rss  
0
10  
20  
30  
40  
50  
0
5
10  
15  
20  
25  
30  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
V
D
= 10 V  
I = 9 A  
DS  
= 9 A  
GS  
I
D
6
4
2
0
5
10  
15  
20  
25  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
Document Number: 70752  
S-56945—Rev. C, 23-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-3  
Si4416DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
50  
10  
0.08  
0.06  
0.04  
0.02  
0
I
D
= 9.0 A  
T = 150_C  
J
T = 25_C  
J
1
0
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
0
2
4
6
8
10  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
50  
40  
30  
20  
10  
0
0.8  
0.4  
I
D
= 250 mA  
0.0  
–0.4  
–0.8  
–1.2  
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.010  
0.100  
1.000  
10.000  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
0.02  
2
2. Per Unit Base = R  
= 50_C/W  
3. T – T = P  
DM thJA  
thJA  
(t)  
Z
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
Document Number: 70752  
S-56945—Rev. C, 23-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-4  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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