SI4426DY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 6.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8;型号: | SI4426DY-T1-E3 |
厂家: | VISHAY |
描述: | Small Signal Field-Effect Transistor, 6.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 光电二极管 晶体管 |
文件: | 总7页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4426DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
ꢀ.5
Definition
TrenchFET® Power MOSFETs
Compliant to RoHS Directive 2002/95/EC
0.025 at VGS = 4.5 V
0.035 at VGS = 2.5 V
•
•
20
7.1
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4426DY-T1-E3 (Lead (Pb)-free)
Si4426DY-T1-GE3 (Lead (Pb)-free and Halogen free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
12
V
VGS
TA = 25 °C
TA = 70 °C
ꢀ.5
6.ꢀ
6.5
5.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
IDM
IS
40
2.1
2.5
1.6
2.1
TA = 25 °C
1.5
0.9
Maximum Power Dissipationa
PD
W
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
3ꢀ
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
50
ꢀ5
25
Maximum Junction-to-Ambienta
RthJA
70
°C/W
Maximum Junction-to-Foot (Drain)
RthJF
20
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71107
S09-0767-Rev. D, 04-May-09
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1
Si4426DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
0.6
1.4
100
1
V
Gate-Body Leakage
VDS = 0 V, VGS
=
12 V
nA
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
40
VGS = 4.5 V, ID = ꢀ.5 A
0.019
0.025
27
0.025
0.035
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 2.5 V, ID = 7.1 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 10 V, ID = ꢀ.5 A
IS = 2.1 A, VGS = 0 V
S
V
VSD
0.ꢀ
1.2
50
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
25
6.5
4
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS = 10 V, VGS = 4.5 V, ID = ꢀ.5 A
nC
ns
40
40
90
40
40
60
60
V
DD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
150
60
Source-Drain Reverse Recovery Time
trr
IF = 2.1 A, dI/dt = 100 A/µs
60
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
30
20
10
0
40
30
20
10
0
V
= 5 V thru 3 V
GS
2.5 V
2 V
T
= 125 °C
C
25 °C
1, 1.5 V
- 55 °C
2.0
0
0.5
1.0
DS
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.5
3.0
V
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 71107
S09-0767-Rev. D, 04-May-09
Si4426DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
4000
3200
2400
1600
800
0.08
0.06
0.04
C
iss
V
GS
= 2.5 V
C
oss
0.02
0
V
GS
= 4.5 V
C
rss
0
0
10
20
30
40
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
= 10 V
= 8.5 A
V
= 4.5 V
= 8.5 A
DS
GS
I
D
I
D
4
3
2
1
0
0
5
10
15
20
25
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
40
10
0.10
0.08
0.06
0.04
0.02
0
T = 150 °C
J
I
D
= 8.5 A
T = 25 °C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71107
S09-0767-Rev. D, 04-May-09
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3
Si4426DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
0.2
I
D
= 250 µA
30
0.0
- 0.2
- 0.4
- 0.6
20
10
0
-2
-1
- 50
- 25
0
25
50
75
100 125 150
10
10
1
10
100
600
Time (s)
T
- Temperature (°C)
J
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T – T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71107.
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4
Document Number: 71107
S09-0767-Rev. D, 04-May-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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