SI4448DY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8;
| 型号： | SI4448DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4448DY
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
50
Available
0.0017 at VGS = 4.5 V
0.002 at VGS = 2.5 V
0.0027 at VGS = 1.8 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
12
46
56 nC
40
APPLICATIONS
•
POL
•
DC/DC
SO-8
D
D
S
1
2
3
4
8
7
6
5
D
D
D
S
S
G
G
Top View
S
Ordering Information:
Si4448DY-T1-E3 (Lead (Pb)-free)
Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
12
Unit
V
8
VGS
50
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
40
Continuous Drain Current (TJ = 150 °C)
ID
32b, c
26b, c
70
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
7
3b, c
20
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
IAS
L = 0.1 mH
20
7.8
5.0
3.5b, c
2.2b, c
EAS
mJ
W
TC = 25 °C
TC = 70 °C
PD
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
- 55 to 150
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
Typical
29
Maximum
Unit
RthJA
t ≤ 10 s
35
16
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
13
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
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1
Si4448DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
12
V
V
DS Temperature Coefficient
14
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 3.3
VDS = VGS, ID = 250 µA
0.4
40
1.0
100
1
V
IGSS
VDS = 0 V, VGS
=
8 V
nA
VDS = 12 V, VGS = 0 V
DS = 12 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
VGS = 4.5 V, ID = 20 A
0.0014
0.0016
0.0022
190
0.0017
0.0020
0.0027
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 2.5 V, ID = 15 A
GS = 1.8 V, ID = 10 A
Ω
Forward Transconductancea
gfs
VDS = 6 V, ID = 20 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
12350
2775
1590
99
VDS = 6 V, VGS = 0 V, f = 1 MHz
VDS = 6 V, VGS = 4.5 V, ID = 10 A
pF
150
85
Qg
Total Gate Charge
56
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS = 6 V, VGS = 2.5 V, ID = 10 A
f = 1 MHz
10.3
13.4
0.75
38
1.5
70
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
40
V
DD = 6 V, RL = 0.6 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
240
33
400
55
ns
Turn-On Delay Time
Rise Time
20
40
11
22
V
DD = 6 V, RL = 0.6 Ω
ID ≅ 10 A, VGEN = 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
100
11
170
22
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
7
A
Pulse Diode Forward Currenta
Body Diode Voltage
70
0.54
84
1.1
140
150
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
93
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
28
ns
tb
56
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Si4448DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 5 thru 1.5 V
56
42
28
14
0
T
C
= 25 °C
T
C
= 125 °C
1 V
T
J
= - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
16 000
12 800
9600
6400
3200
0
0.0025
0.0022
0.0019
0.0016
0.0013
0.0010
C
V
GS
= 1.8 V
iss
V
= 2.5 V
GS
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
12
0
14
28
42
56
70
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
4.5
3.6
2.7
1.8
0.9
0.0
1.5
1.3
1.1
0.9
0.7
I
= 10 A
I = 20 A
D
D
V
DS
= 4 V
V
GS
= 1.8 V
V
DS
= 6 V
V
DS
= 8 V
V
GS
= 4.5 V
0
22
44
66
88
110
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q - Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
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3
Si4448DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
100
10
1
I
= 20 A
D
T
J
= 150 °C
0.008
0.006
0.004
0.002
0
T
J
= 25 °C
0.1
0.01
T
A
= 125 °C
T
A
= 25 °C
2
0.001
0
1
3
4
5
0
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.1
200
160
120
80
- 0.1
- 0.3
- 0.5
I
= 5 mA
D
40
I
= 250 µA
D
0
0.001
0.01
0.1
1
10
- 50 - 25
0
25
50
75
100 125 150
Time (s)
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
1 ms
10 ms
10
1
100 ms
1 s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Si4448DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
55
44
33
22
11
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
8
2.0
1.6
1.2
0.8
0.4
6
4
2
0
0
0
0
25
50
75
100
125
150
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
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5
Si4448DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
t
2
t
t
1
2
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-3
-2
-1
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69653.
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6
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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