SI4462DY [VISHAY]
N-Channel 200-V (D-S) MOSFET; N沟道200 -V （D -S ）的MOSFET
| 型号： | SI4462DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 200-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4462DY
Vishay Siliconix
New Product
N-Channel 200-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for Fast Switching
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
D Primary Side Switch
0.480 @ V = 10 V
1.50
1.45
GS
200
0.510 @ V = 6.0 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
200
DS
GS
V
V
"20
T
= 25_C
= 70_C
1.50
1.20
1.15
0.92
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current
I
5
DM
Single Avalanch Current
I
1.5
0.11
AS
L = 0.1 mH
Single Avalanch Energy
E
mJ
A
AS
a
Continuous Source Current (Diode Conduction)
I
2.1
2.5
1.6
1.1
1.3
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.85
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
70
20
50
85
24
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
www.vishay.com
1
Si4462DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
4
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 160 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 160 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
5
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.39
0.480
0.510
V
= 10 V, I = 1.5 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
0.420
V
= 6.0 V, I = 1.45 A
D
GS
a
Forward Transconductance
g
V
= 15 V, I = 1.5A
5
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= 2.1 A, V = 0 V
0.8
1.2
9
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
6
g
Q
gs
Q
gd
V
= 100 V, V = 10 V, I = 1.5 A
0.9
1.9
3.7
10
12
10
15
55
nC
DS
GS
D
R
W
G
t
t
15
20
15
25
90
d(on)
t
r
V
= 100 V, R = 100 W
L
DD
I
D
^ 1.0 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
5
5
4
3
2
1
0
V
= 10 thru 5 V
GS
4
3
2
1
0
T
C
= 125_C
4 V
3 V
8
25_C
-55 _C
0
2
4
6
10
0
1
2
3
4
5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
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Document Number: 72093
S-22098—Rev. A, 02-Dec-02
Si4462DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.8
400
300
200
100
0
0.6
C
iss
V
= 6 V
GS
0.4
0.2
0.0
V
= 10 V
GS
C
rss
C
oss
0
1
2
3
4
5
0
20
40
60
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.5
2.1
1.7
1.3
0.9
0.5
V
= 100 V
= 1.5 A
V
= 10 V
GS
DS
I
D
I = 1.5 A
D
6
4
2
0
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
5
1
0.6
0.4
0.2
0.0
I
D
= 1.5 A
T = 150_C
J
T = 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
www.vishay.com
3
Si4462DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
0.4
I
D
= 250 mA
30
20
10
0
0.0
-0.4
-0.8
-1.2
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100 600
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area
10
I Limited
DM
r
Limited
DS(on)
I
D(on)
P(t) = 0.0001
P(t) = 0.001
Limited
1
P(t) = 0.01
P(t) = 0.1
0.1
0.01
P(t) = 1
T
= 25_C
P(t) = 10
dc
A
Single Pulse
BV
DSS
Limited
0.001
0.1
1
10
100
1000
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 72093
S-22098—Rev. A, 02-Dec-02
Si4462DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
www.vishay.com
5
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