SI4632DY-T1-E3 [VISHAY]
TRANSISTOR 27 A, 25 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, FET General Purpose Power;
| 型号： | SI4632DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 27 A, 25 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, FET General Purpose Power 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4632DY
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)a
36
Qg (Typ.)
Definition
0.0027 at VGS = 10 V
0.0033 at VGS = 4.5 V
•
•
•
•
Low Qgd
100 % Rg Tested
UIS and Capacitance Tested
25
49 nC
29
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Synchronous Buck - Low Side
- Notebook
SO-8
- Server
D
- Workstation
S
D
D
D
D
1
2
3
4
8
7
6
5
•
Synchronous Rectifier - POL
S
S
G
G
Top View
S
Ordering Information: Si4632DY-T1-E3 (Lead (Pb)-free)
Si4632DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
25
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
16
TC = 25 °C
C = 70 °C
TA = 25 °C
TA = 70 °C
40
T
32
Continuous Drain Current (TJ = 150 °C)
ID
27b, c
21b, c
70
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
7.0
3.0b, c
30
Continuous Source-Drain Diode Current
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Single Pulse Avalanche Current
Avalanche Energy
IAS
EAS
45
mJ
W
7.8
T
C = 70 °C
5.0
Maximum Power Dissipation
PD
3.5b, c
2.2b, c
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
TJ, Tstg
- 55 to 150
Parameter
Symbol
RthJA
Typical
29
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 5 s
Steady
35
16
°C/W
RthJF
13
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
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1
Si4632DY
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
25
V
23
- 6
mV/°C
VDS = VGS, ID = 250 µA
1.2
30
2.6
100
1
V
IGSS
VDS = 0 V, VGS
=
16 V
nA
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS = ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
µA
A
10
0.0022
0.0027
73
0.0027
0.0033
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 15 A
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Coss
Crss
3275
495
7450
990
460
108
49
11175
1485
690
Output Capacitance
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
230
V
DS = 15 V, VGS = 10 V, ID = 20 A
161
Total Gate Charge
Qg
73
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
19
11
1.3
42
2.0
65
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
115
55
175
85
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
14
23
ns
Turn-On Delay Time
Rise Time
20
30
69
105
90
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
58
8
15
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
7
A
70
1.1
70
65
Body Diode Voltage
0.75
44
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
42
IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C
22
ns
Reverse Recovery Rise Time
tb
22
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
1.2
0.9
0.6
0.3
0.0
70
56
42
28
14
0
V
= 10 V thru 4 V
GS
3 V
25 °C
T
C
= 125 °C
1
- 55 °C
0
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0034
0.0030
0.0026
0.0022
0.0018
8500
6800
5100
3400
1700
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
I
- Drain Current (A)
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 20 A
I
D
= 20 A
V
GS
= 10 V
V
= 10 V
DS
6
V
DS
= 15 V
V
GS
= 4.5 V
V
= 20 V
4
GS
2
0
0
22
44
66
88
110
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
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3
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
100
0.030
0.024
0.018
0.012
0.006
0.000
10
1
150 °C
0.1
25 °C
125 °C
0.01
0.001
25 °C
0
1
2
3
4
5
6
7
8
9
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
80
- 0.1
- 0.4
- 0.7
- 1.0
I
= 5 mA
D
I
D
= 250 µA
40
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
DC
T
= 25 °C
A
Single Pulse
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
45
40
35
30
Package Limited
25
20
15
10
5
0
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
10
8
2.0
1.6
1.2
0.8
0.4
0.0
6
4
2
0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
www.vishay.com
5
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 60 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.1
0.001
0.01
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73786.
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Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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