SI4710CY [VISHAY]
Battery Disconnect Switch; 蓄电池断路开关
| 型号： | SI4710CY |
| 厂家： | 
VISHAY |
| 描述： | Battery Disconnect Switch |
| 文件： | 总9页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4710CY
Vishay Siliconix
New Product
Battery Disconnect Switch
FEATURES
D Solution for Bi-Directional Blocking
D Level-Shifted Gate Drive with Internal MOSFET
Bi-Directional Conduction Switch
D Ultra Low Power Consumption in Off State
D 6- to 30-V Operation
(Leakage Current Only)
D Logic Supply Voltage is Not Required
D Ground Referenced Logic Level Inputs
D Integrated Low rDS(on) MOSFET
DESCRIPTION
The Si4710CY is a level-shifted p-channel MOSFET. Operating
two in a series, these MOSFETs can be used as a reverse
blocking switch for battery disconnect applications. It is a solution
for multiple battery technology designs or designs that require
isolation from the power bus during charging.
The Si4710CY is available in a 8-pin SOIC package and is rated
for the commercial temperature range of –25 to 85_C.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
2
G
D
1
5, 6, 7
IN
Logic
ESD
and
Gate
Drive
Level
Shift
8
GND
3, 4
V
GS
S
Limiter
Half a circuit shown here.
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-1
Si4710CY
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to GND
a
(t = steady state) . . . . . . . . . . . . . . . . . . . . . . . 1.4 W
V , V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
S
D
Thermal Resistance
b
Max Junction-Ambient (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 55 C/W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 90 C/W
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
SD
, V
IN1 IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V
Max Junction-Foot
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 27 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
GS
Notes
a.
V
≤ 30 V
SD DC
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
b. Device mounted with all leads soldered to 1” x 1” FR4 with laminated
copper PC board.
b
Power Dissipation
(t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 85_C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 150_C
S
D
V , V
IN1 IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A
DS
SPECIFICATIONS
Limits
Tempa
Minb
Typc
Maxb
Unit
W
Parameter
Symbol
Specific Test Conditions
On-Resistance
r
DS
V
S
= 10 V, I = 1 A, V = H
Room
Room
0.014
0.018
1
D
IN
Leakage Current
I
V
DS
= 10 V
DS(off)
I
S
Room
Room
1
GND
mA
(off)
Power Consumption
V
S
= 17 V
I
S
1.1
6
GND
(on)
Input Voltage Low
Input Voltage High
Input Leakage Current
V
Full
0.8
INL
V
= 10 V
= 5.0 V
V
S
V
Full
2.5
INH
INH
I
V
IN
Full
5
6
mA
Turn-On Delay
IN
t
Room
Room
Room
Room
Room
Room
3.0
1.5
ON(IN)
to D or S
Turn-Off Delay
t
3
ms
OFF(IN)
V
S
= 10 V, R = 5 W, Test Circuit 1
L
Rise Time
t
t
1.25
50
3
RISE
FALL
Fall Time
150
18
1.1
ns
V
Voltage Across Pin 6 and 7
Forward Diode
V
V
S
= 30 V
= –1 A
10.2
GS
SD
V
I
D
Notes
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-2
Si4710CY
Vishay Siliconix
New Product
TIMING DIAGRAMS
10 V
SOURCE
50%
50%
V
V
IN
0 V
90%
10%
90%
10%
DRAIN
D
5 W
t
t
OFF(IN)
ON(IN)
t
r
t
f
TEST CIRCUIT 1
PIN CONFIGURATION
SO-8
TRUTH TABLE
IN
G
S
GND
D
1
2
3
4
8
7
6
5
VIN
Switch
0
0
1
1
Off
Off
On
On
D
S
D
Order Number: Si4710CY
PIN DESCRIPTION
Pin Number
Symbol
Description
5, 6
8
D
GND
IN
Drain connection for MOSFET.
Ground
1
Logic input, IN. High level turns on the switch.
Gate output to MOSFET.
2
G
3, 4
S
Source connection for MOSFET.
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-3
Si4710CY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
On-Resistance vs. Source Voltage
0.10
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.08
0.06
0.04
0.02
0
V
S
= 10 V
I
S
= 1 A
0
4
8
12
16
20
0
1
2
3
4
5
6
I
S
(A)
V (V)
S
Normalized On-Resistance vs.
Junction Temperature
Output Capacitance vs. Source Voltage
1.8
2500
2000
1500
1000
500
V
I
= 10 V
= 1 A
S
S
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
IN
= 0 V
0
–50 –25
0
25
50
75
100 125 150
0
5
10
15
(V)
20
25
30
T – Junction Temperature (_C)
J
V
S
On-Supply Current vs. Source Voltage
Off-Supply Current vs. Source Voltage
10.000
1.000
0.100
0.010
0.001
10.000
1.000
0.100
0.010
0.001
T = 150_C
J
T = 150_C
J
T = 25_C
J
T = 25_C
J
0
5
10
15
(V)
20
25
30
0
5
10
15
(V)
20
25
30
V
V
S
S
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-4
Si4710CY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Drain-Source Diode Forward Voltage
Input Voltage Trip Point vs. Temperature
10
1.8
1.6
1.4
1.2
1.0
0.8
T = 150_C
J
V
S
= 21 V
V
S
= 10 V
T = 25_C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–50
–25
0
25
50
75
100
125
125
125
150
150
150
V
– Source-to-Drain Voltage (V)
T = Ambient Temperature (_C)
A
SD
Turn-On Delay vs. Temperature
Turn-off Delay vs. Temperature
4.0
3.6
3.2
2.8
2.4
2.0
2.0
1.8
1.6
1.4
1.2
1
V
= 10 V
Rl = 5 W
V = 10 V
S
Rl = 5 W
S
–50
–25
0
25
50
75
100
125
150
–50
–25
0
25
50
75
100
Temperature (_C)
Temperature (_C)
Rise Time vs. Temperature
Fall Time vs. Temperature
80
70
60
50
40
30
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
S
= 10 V
Rl = 5 W
V = 10 V
S
Rl = 5 W
–50
–25
0
25
50
75
100
125
150
–50
–25
0
25
50
75
100
Temperature (_C)
Temperature (_C)
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-5
Si4710CY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Foot
100
100
80
80
60
40
60
40
20
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Time (sec)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 63_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-6
Si4710CY
Vishay Siliconix
New Product
APPLICATION DRAWINGS
Si4710CY
Si4710CY
AC/DC
5, 6, 7
3, 4
2
3, 4
2
5, 6, 7
Display
Power
Charger
1
1
Logic In
Drive
Drive
Logic In
Si4710CY
Si4710CY
Si6415
5, 6, 7
3, 4
3, 4
2
5, 6, 7
2
Battery-A
1
1
Logic In
Drive
Drive
Logic In
Si4710CY
Si4710CY
Si6415
5, 6, 7
3, 4
2
3, 4
2
5, 6, 7
Battery-B
Logic In
1
1
Drive
Drive
Logic In
Figure 1: High-Performance Laptop PC
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-7
Si4710CY
New Product
Vishay Siliconix
APPLICATION DRAWINGS
Si4710CY
Si4435DY
5, 6, 7
3, 4
2
Battery-A
Logic In
1
Drive
Si4710CY
Si4435DY
5, 6, 7
3, 4
2
Battery-B
Logic In
1
5 V
3.3 V
DC-DC
Converter
Drive
Figure 2:
AC/DC
Charger
Si4710CY
Si4710CY
5, 6, 7
3, 4
5, 6, 7
3, 4
2
Display
Power
2
Battery
1
1
Logic In
Drive
Logic In
Drive
5 V
3.3 V
DC-DC
Converter
Figure 3: Low-Cost Laptop PC
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-8
Si4710CY
Vishay Siliconix
New Product
APPLICATION DRAWINGS
Si4710CY
5-V Output
3.3 V
5, 6, 7
3, 4
2
1
Logic In
Drive
DC-DC
Converter
Si4710CY
5, 6, 7
3, 4
2
3.3-V Output
5 V
1
Logic In
Drive
Figure 4: ACPI Power Saving Switcher
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com S FaxBack 408-970-5600
2-9
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