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SI4800BDY-E3 [VISHAY]

Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;

SI4800BDY-E3


元器件型号：	SI4800BDY-E3
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关光电二极管晶体管
PDF文件：	总5页 (文件大小：58K)
下载文档：	下载PDF数据表文档文件
型号参数：SI4800BDY-E3参数

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78 VISHAY

SI4800DY-T1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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1 VISHAY

SI4800DY-T1-E3

Power Field-Effect Transistor, 9A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 VISHAY

SI4802DY

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172 VISHAY

SI4802DY

N-Channel 30-V (D-S) MOSFET

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63 VISHAY

SI4802DY

N-Channel 30-V (D-S) MOSFET

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26 VISHAY

SI4802DY-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

SI4802DY-T1-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

SI4804BDY

Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison

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28 VISHAY

SI4804BDY

Dual N-Channel 30-V (D-S) MOSFET

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65 VISHAY

SI4804BDY

Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison

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38 VISHAY

SI4804BDY

Dual N-Channel 30-V (D-S) MOSFET

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98 VISHAY

SI4804BDY

Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison

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184 VISHAY

SI4804BDY-T1

Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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0 VISHAY

SI4804BDY-T1-E3

Dual N-Channel 30 V (D-S) MOSFET

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36 VISHAY

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